Michael Treu

684 total citations
24 papers, 556 citations indexed

About

Michael Treu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, Michael Treu has authored 24 papers receiving a total of 556 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 4 papers in Mechanical Engineering. Recurrent topics in Michael Treu's work include Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and interfaces (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). Michael Treu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and interfaces (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). Michael Treu collaborates with scholars based in Austria, Germany and Canada. Michael Treu's co-authors include Roland Rupp, Dethard Peters, G. Sölkner, T. Reimann, Oliver D. Häberlen, Gerald Deboy, Rudolf Elpelt, J. Hilsenbeck, T. Laska and Peter Friedrichs and has published in prestigious journals such as Journal of Applied Physics, Superlattices and Microstructures and Materials science forum.

In The Last Decade

Michael Treu

24 papers receiving 510 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael Treu Austria 13 534 116 98 62 28 24 556
Tsunenobu Kimoto Tsunenobu Kimoto Japan 10 582 1.1× 92 0.8× 49 0.5× 88 1.4× 47 1.7× 15 603
V. Khemka United States 15 676 1.3× 141 1.2× 88 0.9× 47 0.8× 40 1.4× 54 691
Tsutomu Yatsuo Japan 15 702 1.3× 111 1.0× 33 0.3× 85 1.4× 27 1.0× 77 715
Alexander Bolotnikov United States 14 442 0.8× 64 0.6× 29 0.3× 40 0.6× 27 1.0× 36 471
Ralf Siemieniec Germany 13 795 1.5× 59 0.5× 57 0.6× 28 0.5× 20 0.7× 45 805
Sarah K. Haney United States 11 655 1.2× 99 0.9× 21 0.2× 66 1.1× 22 0.8× 19 666
Toru Hiyoshi Japan 12 657 1.2× 143 1.2× 20 0.2× 76 1.2× 25 0.9× 18 661
Juraj Marek Slovakia 13 292 0.5× 62 0.5× 172 1.8× 47 0.8× 48 1.7× 65 332
G. Landis United States 11 312 0.6× 120 1.0× 34 0.3× 72 1.2× 135 4.8× 18 365
Slavo Kicin Switzerland 13 399 0.7× 182 1.6× 41 0.4× 9 0.1× 59 2.1× 32 491

Countries citing papers authored by Michael Treu

Since Specialization
Citations

This map shows the geographic impact of Michael Treu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Treu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Treu more than expected).

Fields of papers citing papers by Michael Treu

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Treu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Treu. The network helps show where Michael Treu may publish in the future.

Co-authorship network of co-authors of Michael Treu

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Treu. A scholar is included among the top collaborators of Michael Treu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Treu. Michael Treu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Deboy, Gerald, et al.. (2016). Si, SiC and GaN power devices: An unbiased view on key performance indicators. 20.2.1–20.2.4. 38 indexed citations
2.
Rupp, Roland, T. Laska, Oliver D. Häberlen, & Michael Treu. (2014). Application specific trade-offs for WBG SiC, GaN and high end Si power switch technologies. 2.3.1–2.3.4. 48 indexed citations
3.
Treu, Michael, et al.. (2012). The role of silicon, silicon carbide and gallium nitride in power electronics. 7.1.1–7.1.4. 28 indexed citations
4.
Treu, Michael, et al.. (2011). 1200V SiC JFET in Cascode Light Configuration: Comparison versus Si and SiC Based Switches. Materials science forum. 679-680. 587–590. 8 indexed citations
5.
Treu, Michael, Roland Rupp, & G. Sölkner. (2010). Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues. 156–161. 60 indexed citations
6.
Hilsenbeck, J., et al.. (2010). SiC JFETs for Power Module Applications. Materials science forum. 645-648. 1167–1170. 2 indexed citations
7.
Rupp, Roland, et al.. (2010). A New Generation of SiC Schottky Diodes with Improved Thermal Management and Reduced Capacitive Losses. Materials science forum. 645-648. 885–888. 6 indexed citations
8.
Hilsenbeck, J., Michael Treu, Roland Rupp, Dethard Peters, & Rudolf Elpelt. (2009). Avalanche Capability of Unipolar SiC Diodes: A Feature for Ruggedness and Reliability Improvement. Materials science forum. 615-617. 659–662. 4 indexed citations
9.
Treu, Michael, et al.. (2007). Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure. Materials science forum. 556-557. 851–856. 27 indexed citations
10.
Treu, Michael, et al.. (2006). Commercial SiC device processing: Status and requirements with respect to SiC based power devices. Superlattices and Microstructures. 40(4-6). 380–387. 26 indexed citations
11.
Treu, Michael, et al.. (2006). 2nd Generation 600V SiC Schottky Diodes Use Merged pn/Schottky Structure for Surge Overload Protection. 389 393. 170–173. 20 indexed citations
12.
Ciappa, Mauro, et al.. (2006). Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices. Materials science forum. 527-529. 787–790. 2 indexed citations
13.
Rupp, Roland, et al.. (2006). "2nd Generation" SiC Schottky diodes: A new benchmark in SiC device ruggedness. 1–4. 51 indexed citations
14.
Treu, Michael, Roland Rupp, J. Hilsenbeck, et al.. (2006). A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications. Materials science forum. 527-529. 1155–1158. 26 indexed citations
15.
Rupp, Roland, et al.. (2005). Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability. Materials science forum. 483-485. 925–928. 16 indexed citations
16.
Hobgood, H. McD., et al.. (2004). Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates. Materials science forum. 457-460. 759–762. 8 indexed citations
17.
Treu, Michael, et al.. (2001). Temperature Dependence of Forward and Reverse Characteristics of Ti, W, Ta and Ni Schottky Diodes on 4H-SiC. Materials science forum. 353-356. 679–682. 45 indexed citations
18.
Treu, Michael, Reinhold Schörner, Peter Friedrichs, et al.. (2000). Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide. Materials science forum. 338-342. 1089–1092. 5 indexed citations
19.
Rupp, Roland, et al.. (2000). Performance and Reliability Issues of SiC-Schottky Diodes. Materials science forum. 338-342. 1167–1170. 31 indexed citations
20.
Treu, Michael, Edmund P. Burte, Reinhold Schörner, et al.. (1998). Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide. Journal of Applied Physics. 84(5). 2943–2948. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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