Masato Noborio

820 total citations
35 papers, 689 citations indexed

About

Masato Noborio is a scholar working on Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Condensed Matter Physics. According to data from OpenAlex, Masato Noborio has authored 35 papers receiving a total of 689 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 18 papers in Electronic, Optical and Magnetic Materials and 3 papers in Condensed Matter Physics. Recurrent topics in Masato Noborio's work include Silicon Carbide Semiconductor Technologies (35 papers), Semiconductor materials and devices (29 papers) and Copper Interconnects and Reliability (17 papers). Masato Noborio is often cited by papers focused on Silicon Carbide Semiconductor Technologies (35 papers), Semiconductor materials and devices (29 papers) and Copper Interconnects and Reliability (17 papers). Masato Noborio collaborates with scholars based in Japan, Germany and Canada. Masato Noborio's co-authors include Tsunenobu Kimoto, Jun Suda, Hiroyuki Matsunami, Hiroaki Kawano, M. Krieger, Svetlana Beljakowa, Anton J. Bauer, Kazuhiro Tsuruta, Shuhei Mitani and Yuichi Takeuchi and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

Masato Noborio

34 papers receiving 670 citations

Peers

Countries citing papers authored by Masato Noborio

Since Specialization

Citations

This map shows the geographic impact of Masato Noborio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masato Noborio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masato Noborio more than expected).

Fields of papers citing papers by Masato Noborio

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masato Noborio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masato Noborio. The network helps show where Masato Noborio may publish in the future.

Co-authorship network of co-authors of Masato Noborio

This figure shows the co-authorship network connecting the top 25 collaborators of Masato Noborio. A scholar is included among the top collaborators of Masato Noborio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masato Noborio. Masato Noborio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density 2019 ·(unknown), (unknown), (unknown), Shuhei Mitani, Masato Noborio, Yuichi Takeuchi, Kazuhiro Tsuruta	12
2	Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd 2018 ·(unknown), (unknown), Shuhei Mitani, Masato Noborio, Yuichi Takeuchi, (unknown), Toshimasa Yamamoto, Kazuhiro Tsuruta	19
3	4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$ 2014 ·IEEE Electron Device Letters ·Masahiro Horita, Masato Noborio, Tsunenobu Kimoto, Jun Suda	12
4	Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices 2011 ·Japanese Journal of Applied Physics ·Masato Noborio, (unknown), Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto	7
5	Reliability of Nitrided Gate Oxides for N- and P-Type 4H-SiC(0001) Metal–Oxide–Semiconductor Devices 2011 ·Japanese Journal of Applied Physics ·Masato Noborio, (unknown), Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto	5
6	Influence of Effective Fixed Charges on Short-Channel Effects in SiC Metal–Oxide–Semiconductor Field-Effect Transistors 2010 ·Japanese Journal of Applied Physics ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	6
7	Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices 2010 ·Materials science forum ·Masato Noborio, (unknown), Anton J. Bauer, Dethard Peters, Peter Friedrichs, Jun Suda, Tsunenobu Kimoto	2
8	4H‐SiC MISFETs with nitrogen‐containing insulators 2009 ·physica status solidi (a) ·Masato Noborio, Jun Suda, Svetlana Beljakowa, M. Krieger, Tsunenobu Kimoto	62
9	Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N<sub>2</sub>O or NO 2009 ·Materials science forum ·(unknown), Masato Noborio, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Tsunenobu Kimoto, H. Ryssel	18
10	Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure 2009 ·IEEE Transactions on Electron Devices ·(unknown), Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto	11
11	1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face 2009 ·Materials science forum ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	2
12	High electron mobility achieved in n‐channel 4H‐SiC MOSFETs oxidized in the presence of nitrogen 2009 ·physica status solidi (a) ·(unknown), Svetlana Beljakowa, M. Krieger, Gerhard Pensl, Sergey A. Reshanov, Masato Noborio, Tsunenobu Kimoto, В. В. Афанасьев	5
13	P-Channel MOSFETs on 4H-SiC {0001} and Nonbasal Faces Fabricated by Oxide Deposition and $\hbox{N}_{2}\hbox{O}$ Annealing 2009 ·IEEE Transactions on Electron Devices ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	48
14	4H-SiC Double RESURF MOSFETs with a Record Performance by Increasing RESURF Dose 2008 ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	3
15	Improvement of Channel Mobility in Inversion-Type n-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistor by High-Temperature Annealing 2008 ·Japanese Journal of Applied Physics ·(unknown), Masato Noborio, Jun Suda, Tsunenobu Kimoto	42
16	N 2 O -grown oxides/4H-SiC (0001), (033¯8), and (112¯) interface properties characterized by using p-type gate-controlled diodes 2008 ·Applied Physics Letters ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	5
17	4H–SiC Lateral Double RESURF MOSFETs With Low on Resistance 2007 ·IEEE Transactions on Electron Devices ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	41
18	Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs 2006 ·Materials science forum ·Masato Noborio, Yuki Negoro, Jun Suda, Tsunenobu Kimoto	0
19	Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs 2006 ·Masato Noborio, Jun Suda, Tsunenobu Kimoto	5
20	MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N₂O Oxidation 2004 ·MRS Proceedings ·Tsunenobu Kimoto, (unknown), Masato Noborio, Hiroaki Kawano, H. Matsunami	3

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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