Apurba Laha

1.6k total citations
121 papers, 1.2k citations indexed

About

Apurba Laha is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Condensed Matter Physics. According to data from OpenAlex, Apurba Laha has authored 121 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 89 papers in Electrical and Electronic Engineering, 80 papers in Materials Chemistry and 36 papers in Condensed Matter Physics. Recurrent topics in Apurba Laha's work include Semiconductor materials and devices (69 papers), GaN-based semiconductor devices and materials (36 papers) and Electronic and Structural Properties of Oxides (30 papers). Apurba Laha is often cited by papers focused on Semiconductor materials and devices (69 papers), GaN-based semiconductor devices and materials (36 papers) and Electronic and Structural Properties of Oxides (30 papers). Apurba Laha collaborates with scholars based in India, Germany and China. Apurba Laha's co-authors include H. J. Osten, A. Fissel, S. B. Krupanidhi, E. Bugiel, Rytis Dargis, Swaroop Ganguly, Dipankar Saha, M. Czernohorsky, Putcha Venkateswarlu and R. Ranjith and has published in prestigious journals such as Journal of the American Chemical Society, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Apurba Laha

115 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Apurba Laha India 18 925 835 348 242 183 121 1.2k
R. Bożek Poland 18 616 0.7× 1.0k 1.2× 195 0.6× 345 1.4× 178 1.0× 76 1.3k
K. Eisenbeiser United States 21 1.1k 1.2× 1.4k 1.6× 603 1.7× 222 0.9× 116 0.6× 34 1.7k
Ho‐Hyun Nahm South Korea 20 868 0.9× 969 1.2× 318 0.9× 121 0.5× 108 0.6× 44 1.3k
E.A. Albanesi Argentina 16 610 0.7× 812 1.0× 269 0.8× 200 0.8× 151 0.8× 39 1.0k
Wenhui Wan China 16 725 0.8× 989 1.2× 292 0.8× 267 1.1× 118 0.6× 62 1.4k
Shou‐Yi Kuo Taiwan 21 1.1k 1.1× 1.3k 1.5× 394 1.1× 188 0.8× 270 1.5× 104 1.6k
Heesuk Rho South Korea 18 548 0.6× 764 0.9× 165 0.5× 358 1.5× 140 0.8× 67 998
M. Androulidaki Greece 20 552 0.6× 686 0.8× 378 1.1× 262 1.1× 485 2.7× 106 1.2k
D. Neumayer United States 14 993 1.1× 771 0.9× 231 0.7× 265 1.1× 48 0.3× 37 1.3k
In Gee Kim South Korea 14 646 0.7× 1.4k 1.7× 223 0.6× 188 0.8× 84 0.5× 24 1.6k

Countries citing papers authored by Apurba Laha

Since Specialization
Citations

This map shows the geographic impact of Apurba Laha's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Apurba Laha with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Apurba Laha more than expected).

Fields of papers citing papers by Apurba Laha

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Apurba Laha. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Apurba Laha. The network helps show where Apurba Laha may publish in the future.

Co-authorship network of co-authors of Apurba Laha

This figure shows the co-authorship network connecting the top 25 collaborators of Apurba Laha. A scholar is included among the top collaborators of Apurba Laha based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Apurba Laha. Apurba Laha is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Mahapatra, Suddhasatta, et al.. (2025). Deciphering frequency effects on the capacitance–voltage characteristics of InGaN/GaN green light emitting diode: exploring signatures of carrier-induced defect saturation. Journal of Physics D Applied Physics. 58(20). 205102–205102. 1 indexed citations
2.
Kumar, Sandeep, Anand Sharma, Rakesh G. Mote, et al.. (2024). Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application. Thin Solid Films. 808. 140559–140559.
3.
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Kumar, Sandeep, Anand Sharma, Sandip Lashkare, et al.. (2024). Highly oriented crystalline si on epitaxial Gd2O3/Si(111) substrate using low-cost Radio Frequency sputtering for Silicon on Insulator application. Thin Solid Films. 793. 140272–140272. 1 indexed citations
6.
Kumar, Sandeep, et al.. (2023). Phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application. Thin Solid Films. 778. 139907–139907. 4 indexed citations
7.
Suihkonen, Sami, et al.. (2023). Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111). IEEE Transactions on Electron Devices. 70(7). 3649–3655. 6 indexed citations
8.
Mahapatra, Suddhasatta, et al.. (2023). Scaling Nanowire-Supported GaN Quantum Dots to the Sub-10 nm Limit, Yielding Complete Suppression of the Giant Built-in Potential. Crystal Growth & Design. 23(6). 3935–3941. 1 indexed citations
9.
Horng, Ray‐Hua, et al.. (2021). Impact of Ex-Situ Heating on Carrier Kinetics in GaN/InGaN Based Green LEDs. ECS Journal of Solid State Science and Technology. 10(3). 35004–35004. 4 indexed citations
10.
Lemettinen, Jori, Sami Suihkonen, H. J. Osten, et al.. (2021). Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON/I OFF Operating at 473 K. IEEE Transactions on Electron Devices. 68(6). 2653–2660. 11 indexed citations
11.
Singh, Shivam, Swarup Deb, Sami Suihkonen, et al.. (2021). A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer. IEEE Transactions on Electron Devices. 68(6). 2796–2803. 21 indexed citations
12.
Arora, Brij M., et al.. (2020). Ultra high-sensitive, prompt response and recovering Pt/(Pt+ SiO 2 ) cermet layer/GaN-based hydrogen sensor for life-saving applications. Nanotechnology. 31(46). 46LT02–46LT02. 1 indexed citations
13.
Mahapatra, Suddhasatta, et al.. (2020). Decomposition Resilience of GaN Nanowires, Crested and Surficially Passivated by AlN. Crystal Growth & Design. 20(8). 4867–4874. 9 indexed citations
14.
Ganguly, Swaroop, et al.. (2020). Role of defect saturation in improving optical response from InGaN nanowires in higher wavelength regime. Nanotechnology. 31(49). 495705–495705. 12 indexed citations
15.
Shi, Jin‐Wei, et al.. (2020). Effect of Thermal Management on the Performance of VCSELs. IEEE Transactions on Electron Devices. 67(9). 3736–3739. 13 indexed citations
16.
Mukherjee, Sudipta, et al.. (2019). Efficient ab initio plus analytic calculation of the effect of GaN layer tensile strain in AlGaN/GaN heterostructures. Japanese Journal of Applied Physics. 58(9). 94001–94001. 6 indexed citations
17.
Rathore, J.S., et al.. (2019). Self-Assembled Sn Nanocrystals as the Floating Gate of Nonvolatile Flash Memory. ACS Applied Electronic Materials. 1(9). 1852–1858. 10 indexed citations
18.
Ganguly, Swaroop, et al.. (2019). Engineering V-shaped pits in InGaN layers grown by PA-MBE toward optimizing the active region of green LEDs. Journal of the Optical Society of America B. 36(3). 616–616. 9 indexed citations
19.
Laha, Apurba, et al.. (2019). Study of surface over-layer contribution to Dislocation Assisted Tunneling current: Strategy to improve Pt/n +–GaN Schottky characteristics. Materials Research Express. 6(10). 105917–105917. 1 indexed citations
20.
Laha, Apurba, et al.. (2018). Triaxially uniform high-quality Al x Ga (1− x ) N ( x  ∼ 50%) nanowires on template free sapphire substrate. Nanotechnology. 30(6). 65603–65603. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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