Masataka Satoh

769 total citations
75 papers, 653 citations indexed

About

Masataka Satoh is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Masataka Satoh has authored 75 papers receiving a total of 653 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 27 papers in Materials Chemistry and 17 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Masataka Satoh's work include Semiconductor materials and devices (36 papers), Silicon Carbide Semiconductor Technologies (27 papers) and Semiconductor materials and interfaces (13 papers). Masataka Satoh is often cited by papers focused on Semiconductor materials and devices (36 papers), Silicon Carbide Semiconductor Technologies (27 papers) and Semiconductor materials and interfaces (13 papers). Masataka Satoh collaborates with scholars based in Japan. Masataka Satoh's co-authors include K. Kuriyama, Y. Yamamoto, Tomonori Nakamura, Tomoyasu Inoue, Yasuhiro Yamamoto, Tetsu Ohsuna, Tohru Nakamura, Kazuki Nomoto, Hiroharu Kawahara and Y. Makita and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Masataka Satoh

72 papers receiving 633 citations

Peers

Countries citing papers authored by Masataka Satoh

Since Specialization

Citations

This map shows the geographic impact of Masataka Satoh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masataka Satoh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masataka Satoh more than expected).

Fields of papers citing papers by Masataka Satoh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masataka Satoh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masataka Satoh. The network helps show where Masataka Satoh may publish in the future.

Co-authorship network of co-authors of Masataka Satoh

This figure shows the co-authorship network connecting the top 25 collaborators of Masataka Satoh. A scholar is included among the top collaborators of Masataka Satoh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masataka Satoh. Masataka Satoh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Characterization of silicon ion-implanted GaN and AlGaN 2011 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Kazuki Nomoto, (unknown), Masataka Satoh, Taroh Inada, Tohru Nakamura	6
2	Site identification of GaN using preferential scattering effect along [11¯00] axis 2010 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Tomoaki Nishimura, Masataka Satoh, Kazuki Nomoto, Tohru Nakamura, Tomoyoshi Mishima	2
3	Reduction of on‐resistance in ion‐implanted GaN/AlGaN/GaN HEMTs with low gate leakage current 2010 ·Electronics and Communications in Japan ·Kazuki Nomoto, Masataka Satoh, Tohru Nakamura	3
4	Impact of Si⁺ implantation on reduction of contact resistance in Ti/Al contact to GaN 2007 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Masataka Satoh, (unknown), Kazuki Nomoto, Tohru Nakamura, Tomoyoshi Mishima	2
5	Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing 2006 ·Materials science forum ·(unknown), Masataka Satoh, (unknown), (unknown), Fumio Watanabe, (unknown), (unknown), Tomoyuki Suzuki, (unknown)	3
6	Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC 2006 ·Materials science forum ·Masataka Satoh, Hiroki Matsuo	7
7	Recrystallization process of phosphorus ion implanted 4H–SiC(1 1 2 −0) 2005 ·Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Masataka Satoh, (unknown), Tomoyuki Suzuki	4
8	High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (11\bar20)-Oriented 6H–SiC 2003 ·Japanese Journal of Applied Physics ·Tomonori Nakamura, (unknown), Masataka Satoh	2
9	Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC 2002 ·Materials science forum ·Masataka Satoh	4
10	On fuzzy control based static VAr compensator for power system stability control 2002 ·(unknown), Masataka Satoh, (unknown), (unknown), (unknown), (unknown)	5
11	Orientation dependence of solid phase growth of implantation-induced amorphous layer in 6H–SiC 2002 ·Journal of Crystal Growth ·Tomonori Nakamura, (unknown), Masataka Satoh	6
12	Solid phase epitaxy of implantation-induced amorphous layer in (1100)- and (1120)-oriented 6H-SiC 2001 ·Journal of Applied Physics ·Masataka Satoh, (unknown), Tomonori Nakamura	20
13	Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC 2000 ·Materials science forum ·Masataka Satoh, (unknown), (unknown), K. Kuriyama	6
14	Ohmic Contact Formation on n-Type 6H-SiC using NiSi<sub>2</sub> 2000 ·Materials science forum ·Tomonori Nakamura, (unknown), Masataka Satoh	8
15	Site Identification of 6H-SiC Using RBS/Channeling Technique 1998 ·Materials science forum ·Masataka Satoh, (unknown), Y. Iwata, K. Kuriyama, (unknown), Noboru Ohtani	1
16	Intermediate Amorphous Layer Formation Mechanism at the Interface of Epitaxial CeO₂ Layers and Si Substrates 1993 ·Japanese Journal of Applied Physics ·Tomoyasu Inoue, Tetsu Ohsuna, (unknown), Y. Yamamoto, Masataka Satoh, (unknown)	40
17	An active suspension employing an electrohydraulic pressure control system 1990 ·Masataka Satoh, (unknown), (unknown), (unknown), (unknown)	22
18	Depth uniformity of electrical properties and doping limitation in neutron-transmutation-doped semi-insulating GaAs 1990 ·Journal of Applied Physics ·Masataka Satoh, K. Kuriyama, (unknown)	16
19	Influence of fast neutrons on electrical properties in neutron transmutation doped GaAs: New annealing stage 1987 ·Applied Physics Letters ·Masataka Satoh, K. Kuriyama, M. Yahagi, (unknown), (unknown), (unknown), (unknown), Itsuro Kimura	20
20	Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique 1984 ·Applied Physics Letters ·H. Hamanaka, K. Kuriyama, M. Yahagi, Masataka Satoh, (unknown), (unknown), (unknown), Fumihidé Shiraishi, K. Tsuji, Shigeru Minomura	9

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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