S.J. Fonash

472 citations

38 papers · 358 indexed · h-index 13

Co-authors: Osama O. Awadelkarim Y.D. Chan Ranbir Singh Gang Liu A. Rohatgi Mark W. Horn P. J. Caplan S. Ashok
Topics: Semiconductor materials and devices (25 papers)Silicon and Solar Cell Technologies (12 papers)Thin-Film Transistor Technologies (10 papers)
Cited by: Electrical and Electronic Engineering Computational Mechanics Atomic and Molecular Physics, and Optics
Journals: Applied Physics Letters Journal of Applied Physics Journal of The Electrochemical Society
Partner nations: United States

In The Last Decade

S.J. Fonash

33 papers receiving 347 citations

Peers

Countries citing papers authored by S.J. Fonash

Since Specialization

Citations

This map shows the geographic impact of S.J. Fonash's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S.J. Fonash with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S.J. Fonash more than expected).

Fields of papers citing papers by S.J. Fonash

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S.J. Fonash. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S.J. Fonash. The network helps show where S.J. Fonash may publish in the future.

Co-authorship network of co-authors of S.J. Fonash

This figure shows the co-authorship network connecting the top 25 collaborators of S.J. Fonash. A scholar is included among the top collaborators of S.J. Fonash based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S.J. Fonash. S.J. Fonash is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Photons, Charging Currents, Hydrogen, and Particle Bombardment-- The Four Horsemen of Plasma Etching 2005 ·S.J. Fonash	0
2	Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition 2003 ·Solid-State Electronics ·(unknown),B. Harihara Venkataraman,(unknown),(unknown),(unknown),Osama O. Awadelkarim,S.J. Fonash,(unknown)	2
3	Oxygen plasma enhanced crystallization of a-Si for low thermal budget poly-Si TFTs on Corning 7059 glass 2002 ·(unknown),S.J. Fonash	1
4	Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETs using the charge-pumping technique 2002 ·G. Dolny,(unknown),(unknown),Levent Trabzon,Martin Horn,Osama O. Awadelkarim,S.J. Fonash,C. M. Knoedler,(unknown),(unknown),(unknown),(unknown),Jun Zeng	1
5	Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench 2002 ·Solid-State Electronics ·(unknown),Osama O. Awadelkarim,S.J. Fonash,(unknown),(unknown),(unknown),C. M. Knoedler	4
6	A trapped charge model for the transient effect in CIGS solar cells 2002 ·Joseph D. Cuiffi,Hong Zhu,S.J. Fonash	1
7	The dependence of UMOSFET characteristics and reliability on geometry and processing 2001 ·Semiconductor Science and Technology ·(unknown),(unknown),Levent Trabzon,Jianhua Hao,(unknown),C. M. Knoedler,(unknown),Osama O. Awadelkarim,S.J. Fonash	7
8	Low-Temperature, High-Quality Silicon Dioxide Thin Films Deposited Using Tetramethylsilane (TMS) 1998 ·MRS Proceedings ·(unknown),S.J. Fonash	1
9	Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching 1997 ·IEEE Electron Device Letters ·Murat Okandan,S.J. Fonash,(unknown),(unknown),Y.D. Chan,J. Werking	3
10	Highly conductive ultrathin crystalline Si layers by thermal crystallization of amorphous Si 1991 ·Applied Physics Letters ·(unknown),S.J. Fonash,(unknown)	4
11	Recovery of Si Surfaces Subjected to Reactive Ion Etching Using Rapid Thermal Annealing 1988 ·Journal of The Electrochemical Society ·S.J. Fonash,(unknown),(unknown),L. Rathbun	5
12	Effects of dry etching on the electrical properties of silicon 1988 ·Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ·(unknown),Mark W. Horn,S.J. Fonash,(unknown)	10
13	Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment 1987 ·Applied Physics Letters ·Mark W. Horn,(unknown),S.J. Fonash	17
14	Comparison of the damage and contamination produced by CF4 and CF4/H2 reactive ion etching: The role of hydrogen 1986 ·Applied Physics Letters ·(unknown),S.J. Fonash,A. Rohatgi,(unknown)	26
15	Observation of boron acceptor neutralization in silicon produced by CF4 reactive ion etching or Ar ion beam etching 1986 ·Applied Physics Letters ·(unknown),S.J. Fonash,Ranbir Singh	24
16	A study of CClF3/H2 reactive ion etching damage and contamination effects in silicon 1986 ·Journal of Applied Physics ·(unknown),S.J. Fonash,G. S. Oehrlein,(unknown),C. Parks,John H. Keller	34
17	Reactive ion beam deposition of aluminum nitride thin films 1985 ·Journal of Electronic Materials ·(unknown),S. Ashok,S.J. Fonash,(unknown)	7
18	Silicon damage caused by CCl4 reactive ion etching: Its characterization and removal by rapid thermal annealing 1985 ·Journal of Applied Physics ·S.J. Fonash,Ranbir Singh,A. Rohatgi,P. Rai‐Choudhury,P. J. Caplan,Edward H. Poindexter	12
19	Damage effects in reactive ion etching 1984 ·AIP conference proceedings ·S.J. Fonash	1
20	Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching 1983 ·Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Ranbir Singh,S.J. Fonash,S. Ashok,P. J. Caplan,(unknown),(unknown),J.P. Ponpon	36

About S.J. Fonash

S.J. Fonash is a scholar working on Electrical and Electronic Engineering, Computational Mechanics and Atomic and Molecular Physics, and Optics, having authored 38 papers that have together received 358 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Silicon and Solar Cell Technologies (12 papers) and Thin-Film Transistor Technologies (10 papers). The work is most often cited by research in Electrical and Electronic Engineering (345 citations), Computational Mechanics (63 citations) and Atomic and Molecular Physics, and Optics (83 citations). S.J. Fonash has collaborated with scholars based in United States. Frequent co-authors include Osama O. Awadelkarim, Y.D. Chan, Ranbir Singh, Gang Liu, A. Rohatgi, Mark W. Horn, P. J. Caplan, S. Ashok, G. S. Oehrlein and C. Parks. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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