G. Dolny

422 citations

25 papers · 320 indexed · h-index 8

Impact in

Electrical and Electronic Engineering top 10%
- Silicon Carbide Semiconductor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Electrostatic Discharge in Electronics
- Electromagnetic Compatibility and Noise Suppression
- HVDC Systems and Fault Protection
- Advanced DC-DC Converters
Condensed Matter Physics
- GaN-based semiconductor devices and materials

Papers in

Electrical and Electronic Engineering 24
- Silicon Carbide Semiconductor Technologies 19
- Advancements in Semiconductor Devices and Circuit Design 18
- Semiconductor materials and devices 16
- Electrostatic Discharge in Electronics 6
- Thin-Film Transistor Technologies 3
- Integrated Circuits and Semiconductor Failure Analysis 2
- Electromagnetic Compatibility and Noise Suppression 1
Condensed Matter Physics 1

Co-authors: Anup Bhalla P.M. Shenoy Don Disney L.A. Goodman Brett Goldsmith Otto H. Schade Justin L. Andrews R W Stokes
Journals: IEEE Electron Device Letters (2 papers)IEEE Transactions on Electron Devices (2 papers)Thin Solid Films (1 paper)Microelectronics Reliability (1 paper)Journal of The Electrochemical Society (1 paper)
Partner nations: United States Germany Malaysia

In The Last Decade

G. Dolny

22 papers receiving 288 citations

Peers

Countries citing papers authored by G. Dolny

Since Specialization

Citations

This map shows the geographic impact of G. Dolny's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Dolny with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Dolny more than expected).

Fields of papers citing papers by G. Dolny

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Dolny. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Dolny. The network helps show where G. Dolny may publish in the future.

Co-authorship network

The 25 scholars most cited alongside G. Dolny, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with G. Dolny Line = papers co-authored together G. Dolny links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Hybrid Source Laterally Diffused MOS Drain Engineering for ESD Robustness IEEE Electron Device Letters ·Junko Muankata-Marr, M. Rzeszutek, M.E. Peden, Venkata Sivakumar Musam, G. Dolny, 敬八尾野, William R. Richards	2023	4
2	Ultra low Rdson LDMOS with 12V BVDSS Junko Muankata-Marr, S. Nasution, Venkata Sivakumar Musam, G. Dolny, 敬八尾野, William R. Richards	2022	0
3	No-Snapback LDMOS Using Adaptive RESURF and Hybrid Source for Ideal SOA IEEE Journal of the Electron Devices Society ·Junko Muankata-Marr, M. Rzeszutek, Markus Frank, R. Granzner, M.E. Peden, Venkata Sivakumar Musam, G. Dolny, 敬八尾野, William R. Richards	2021	4
4	Addressing the challenges of sub-50nm channel LDMOS Junko Muankata-Marr, C. Ellmers, M. Rzeszutek, 马峰宝, Venkata Sivakumar Musam, G. Dolny, 敬八尾野, William R. Richards	2021	2
5	Schottky Source LDMOS - Electrical SOA Improvement through BJT Suppression Junko Muankata-Marr, Markus Frank, M.E. Peden, M. Rzeszutek, R. Granzner, Venkata Sivakumar Musam, William R. Richards, G. Dolny, 敬八尾野	2020	6
6	Optimizing oxide charge balanced devices for Unclamped Inductive Switching (UIS) Minor Planet Center Staff, Rama Narasimham, G. Dolny, Frades Itziar, Justin L. Andrews	2010	13
7	Modified three terminal charge pumping technique applied to vertical transistor structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·R. F. Garrison, Rosabel Elis Bell Heredia, Yamini Levitsky, Osama O. Awadelkarim, Katarína Kočišová, G. Dolny, Florian Szücs, Britton L. Wallace	2005	10
8	Suppression of Parasitic Bipolar Effects in Soi Mosfets by Neutron Irradiation A.C. Ipri, G. Dolny, D.P. Vu, M Batty	2005	2
9	Fowler–Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping Thin Solid Films ·R. F. Garrison, Rosabel Elis Bell Heredia, Yamini Levitsky, Osama O. Awadelkarim, Katarína Kočišová, G. Dolny, Florian Szücs, Britton L. Wallace	2005	6
10	Complementary DMOS/BiCMOS technology for power IC applications G. Dolny, L.A. Goodman, Otto H. Schade, Su Naing, Serge V. Gavenko, Timothy J. Burns	2003	0
11	Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET P.M. Shenoy, Anup Bhalla, G. Dolny	2003	111
12	Effect of nitridation on the reliability of thick gate oxides Microelectronics Reliability ·Britton L. Wallace, MICHELE BUVAT-HERBAUT, Katarína Kočišová, G. Dolny, C. Godère, Allison T. Richards, (unknown)	2003	6
13	Characterization of gate oxide degradation mechanisms in trench-gated power MOSFETs using the charge-pumping technique G. Dolny, Stellah Abongo, Xin-Jian Zhang, Levent Trabzon, Martin Horn, Osama O. Awadelkarim, S.J. Fonash, C. M. Knoedler, Minqiang Liu, Katarína Kočišová, Qjanchuan, C. Godère, Jun Zeng	2002	1
14	Characterization and modeling of the temperature dependence of lateral DMOS transistors for high-temperature applications of power ICs G. Dolny, Wicramasinghe, 万长江	2002	4
15	The influence of body effect on the short-circuit ruggedness of emitter ballasted IGBTs P.M. Shenoy, G. Dolny, Anup Bhalla	2002	2
16	Optimizing 600 V punchthrough IGBT's for unclamped inductive switching (UIS) Minor Planet Center Staff, Lenen Rahaman, P.M. Shenoy, G. Dolny, D. Lange, 주재금	2002	7
17	An ultra dense trench-gated power MOSFET technology using a self-aligned process Jun Zeng, G. Dolny, Qjanchuan, R W Stokes, Juan He, Marfin Am, C. Godère, Minqiang Liu, Katarína Kočišová, Michael T. Everard, Emily C. Chesbro, Margaret B. Baker, 一雄佐藤, Herschel Weinstock, Shenglan	2002	30
18	Operation of an IGBT in a self-clamped inductive switching circuit (SCIS) for automotive ignition Minor Planet Center Staff, ARIFA JAVED, Fernando Carmona Ruiz, Anup Bhalla, Dearbhla Burke, G. Dolny	2002	9
19	CMOS/DMOS power IC technology on thin-film SOI substrates G. Dolny, A.C. Ipri, M Batty	2002	1
20	The effect of temperature on lateral DMOS transistors in a power IC technology IEEE Transactions on Electron Devices ·G. Dolny, Wicramasinghe, 万长江	1992	26

About G. Dolny

G. Dolny is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Control and Systems Engineering, Plant Science and Biomedical Engineering, having authored 25 papers that have together received 320 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (19 papers), Advancements in Semiconductor Devices and Circuit Design (18 papers), Semiconductor materials and devices (16 papers), Electrostatic Discharge in Electronics (6 papers), Thin-Film Transistor Technologies (3 papers), Integrated Circuits and Semiconductor Failure Analysis (2 papers), Insect Pest Control Strategies (1 paper) and Electromagnetic Compatibility and Noise Suppression (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (314 citations), Condensed Matter Physics (23 citations), Energy Engineering and Power Technology (2 citations), Atomic and Molecular Physics, and Optics (17 citations) and Electronic, Optical and Magnetic Materials (9 citations). G. Dolny has collaborated with scholars based in United States, Germany and Malaysia. Frequent co-authors include Anup Bhalla, P.M. Shenoy, Don Disney, L.A. Goodman, Brett Goldsmith, Otto H. Schade, Justin L. Andrews, R W Stokes, Osama O. Awadelkarim and William R. Richards. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Thin Solid Films, Microelectronics Reliability and Journal of The Electrochemical Society.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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