Kaizhen Han

1.4k total citations
88 papers, 1.1k citations indexed

About

Kaizhen Han is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Biomedical Engineering. According to data from OpenAlex, Kaizhen Han has authored 88 papers receiving a total of 1.1k indexed citations (citations by other indexed papers that have themselves been cited), including 81 papers in Electrical and Electronic Engineering, 30 papers in Materials Chemistry and 10 papers in Biomedical Engineering. Recurrent topics in Kaizhen Han's work include Semiconductor materials and devices (52 papers), Ferroelectric and Negative Capacitance Devices (33 papers) and Thin-Film Transistor Technologies (26 papers). Kaizhen Han is often cited by papers focused on Semiconductor materials and devices (52 papers), Ferroelectric and Negative Capacitance Devices (33 papers) and Thin-Film Transistor Technologies (26 papers). Kaizhen Han collaborates with scholars based in Singapore, United States and China. Kaizhen Han's co-authors include Xiao Gong, Yuye Kang, Chen Sun, Subhranu Samanta, Chengkuan Wang, Zijie Zheng, Zuopu Zhou, Ying Wu, Jiuren Zhou and Qiwen Kong and has published in prestigious journals such as Nano Letters, Journal of Applied Physics and Optics Express.

In The Last Decade

Kaizhen Han

83 papers receiving 1.1k citations

Peers

Kaizhen Han
Daewon Ha South Korea
Ivan Sanchez Esqueda United States
Ruoming Peng United States
Yabin Sun China
Yongmin Baek United States
Minseong Park United States
Kaizhen Han
Citations per year, relative to Kaizhen Han Kaizhen Han (= 1×) peers Shengman Li

Countries citing papers authored by Kaizhen Han

Since Specialization
Citations

This map shows the geographic impact of Kaizhen Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kaizhen Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kaizhen Han more than expected).

Fields of papers citing papers by Kaizhen Han

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kaizhen Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kaizhen Han. The network helps show where Kaizhen Han may publish in the future.

Co-authorship network of co-authors of Kaizhen Han

This figure shows the co-authorship network connecting the top 25 collaborators of Kaizhen Han. A scholar is included among the top collaborators of Kaizhen Han based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Kaizhen Han. Kaizhen Han is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jiao, Leming, Zuopu Zhou, Zijie Zheng, et al.. (2025). Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes. IEEE Transactions on Electron Devices. 72(3). 1146–1153.
2.
Feng, Yang, Zijie Zheng, Chen Sun, et al.. (2025). Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism. IEEE Transactions on Electron Devices. 72(4). 1788–1794. 1 indexed citations
3.
Han, Kaizhen, Yuye Kang, Yue Chen, & Xiao Gong. (2024). A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method. IEEE Transactions on Electron Devices. 71(4). 2766–2773. 1 indexed citations
4.
Kong, Qiwen, Xiaolin Wang, Zijie Zheng, et al.. (2024). Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors. IEEE Transactions on Electron Devices. 71(9). 5407–5413. 7 indexed citations
5.
Sun, Chen, Zijie Zheng, Yue Chen, et al.. (2024). First Demonstration of BEOL-Compatible 3D Vertical FeNOR. 1–2. 7 indexed citations
6.
Zheng, Zijie, et al.. (2024). Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V. IEEE Electron Device Letters. 45(10). 1847–1850. 4 indexed citations
7.
Han, Kaizhen, Yuye Kang, Chengkuan Wang, et al.. (2024). High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation. Nano Letters. 24(26). 7919–7926. 2 indexed citations
8.
Kang, Yuye, et al.. (2024). BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties. IEEE Transactions on Electron Devices. 71(8). 4692–4700. 6 indexed citations
9.
Zhang, Zhilun, Dieu-Thuong Thi Trinh, Hanjie Li, et al.. (2024). Revealing the Impact of Hydrogen (H) on NBTI/PBTI of IGZTO FETs Under DC and AC Stress: Deep Dive into H Dynamics and Advanced Modeling. 1–4. 3 indexed citations
10.
Liu, Gan, Qiwen Kong, Zuopu Zhou, et al.. (2024). Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI. IEEE Transactions on Electron Devices. 71(12). 7992–7998. 1 indexed citations
12.
Ren, Tianhua, Junyong Wang, Kaizhen Han, et al.. (2023). Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity. Nano Letters. 23(24). 11601–11607. 1 indexed citations
13.
Sun, Chen, Kaizhen Han, Subhranu Samanta, et al.. (2022). Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory. IEEE Transactions on Electron Devices. 69(9). 5262–5269. 21 indexed citations
14.
Zhou, Zuopu, Leming Jiao, Jiuren Zhou, et al.. (2022). Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High CHCS/CLCS, Fast Speed, and Long Retention. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 357–358. 32 indexed citations
15.
Kang, Yuye, Shengqiang Xu, Kaizhen Han, et al.. (2021). Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width. Nano Letters. 21(13). 5555–5563. 28 indexed citations
16.
Samanta, Subhranu, Kaizhen Han, Chen Sun, et al.. (2021). Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length. IEEE Transactions on Electron Devices. 68(3). 1050–1056. 35 indexed citations
17.
Han, Kaizhen, Subhranu Samanta, Chen Sun, & Xiao Gong. (2021). Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness. IEEE Journal of the Electron Devices Society. 9. 1125–1130. 8 indexed citations
18.
Sun, Chen, Zijie Zheng, Kaizhen Han, et al.. (2021). Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure. IEEE Electron Device Letters. 42(12). 1786–1789. 34 indexed citations
19.
Han, Kaizhen, Subhranu Samanta, Shengqiang Xu, Ying Wu, & Xiao Gong. (2020). High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling. IEEE Transactions on Electron Devices. 68(1). 118–124. 14 indexed citations
20.
Samanta, Subhranu, et al.. (2020). Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform. IEEE Electron Device Letters. 41(6). 924–927. 18 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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