Kaizhen Han

1.4k citations

88 papers · 1.1k indexed · h-index 20

Electrical and Electronic Engineering top 5%
- Semiconductor materials and devices 52
- Ferroelectric and Negative Capacitance Devices 33
- Thin-Film Transistor Technologies 26
- Advanced Memory and Neural Computing 21
- Advancements in Semiconductor Devices and Circuit Design 16
- Photonic and Optical Devices 14
Materials Chemistry top 10%
- ZnO doping and properties 12
- Ferroelectric and Piezoelectric Materials 6
Polymers and Plastics
Electronic, Optical and Magnetic Materials
Biomedical Engineering

Co-authors: Xiao Gong Yuye Kang Chen Sun Subhranu Samanta Chengkuan Wang Zijie Zheng Zuopu Zhou Ying Wu
Cited by: Electrical and Electronic Engineering Materials Chemistry Polymers and Plastics
Journals: Nano Letters (4 papers)Journal of Applied Physics (2 papers)Optics Express (1 paper)
Partner nations: Singapore United States China

In The Last Decade

Kaizhen Han

83 papers receiving 1.1k citations

Peers

Countries citing papers authored by Kaizhen Han

Since Specialization

Citations

This map shows the geographic impact of Kaizhen Han's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Kaizhen Han with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Kaizhen Han more than expected).

Fields of papers citing papers by Kaizhen Han

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Kaizhen Han. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Kaizhen Han. The network helps show where Kaizhen Han may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Kaizhen Han, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Kaizhen Han Line = papers co-authored together Kaizhen Han links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Experimental Demonstration and Modeling of BEOL-Compatible IGZO-Based Ferroelectric-Modulated Diodes IEEE Transactions on Electron Devices ·Leming Jiao,Zuopu Zhou,Zijie Zheng,Kaizhen Han,Qiwen Kong,Xiaolin Wang,Haiwen Xu,Jishen Zhang,Chen Sun,Yuye Kang,Gengchiau Liang,Xiao Gong	2025	0
2	Unveiling Ferroelectric HZO Cryogenic Performance (4–300 K): Kinetic Barrier Engineering and Underlying Mechanism IEEE Transactions on Electron Devices ·Dong Zhang,Yang Feng,Zijie Zheng,Chen Sun,Qiwen Kong,Yue Chen,Xiaolin Wang,Yuye Kang,Kaizhen Han,Gan Liu,Zuopu Zhou,Zhilun Zhang,Gengchiau Liang,Kai Ni,Jixuan Wu,Jiezhi Chen,Xiao Gong	2025	1
3	A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method IEEE Transactions on Electron Devices ·Kaizhen Han,Yuye Kang,Yue Chen,Xiao Gong	2024	1
4	Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors IEEE Transactions on Electron Devices ·Gan Liu,Qiwen Kong,Xiaolin Wang,Yi-Hsin Tu,Zijie Zheng,Chen Sun,Dong Zhang,Yuye Kang,Kaizhen Han,Gengchiau Liang,Xiao Gong	2024	7
5	First Demonstration of BEOL-Compatible 3D Vertical FeNOR Yang Feng,Dong Zhang,Chen Sun,Zijie Zheng,Yue Chen,Qiwen Kong,Gan Liu,Yuye Kang,Kaizhen Han,Zuopu Zhou,Gengchiau Liang,Kai Ni,Jixuan Wu,Jiezhi Chen,Xiao Gong	2024	7
6	Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V IEEE Electron Device Letters ·Jiawei Xie,Yuxuan Wang,Zijie Zheng,Yuye Kang,Xuanqi Chen,Gerui Zheng,Rui Shao,Kaizhen Han,Xiao Gong	2024	4
7	High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation Nano Letters ·Kaizhen Han,Yuye Kang,Yi-Hsin Tu,Chaoming Wu,Chengkuan Wang,Long Liu,Gong Zhang,Yue Chen,Kai Ni,Gengchiau Liang,Xiao Gong	2024	2
8	BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties IEEE Transactions on Electron Devices ·Yuye Kang,Kaizhen Han,Xuanqi Chen,Yue Chen,Xiao Gong	2024	6
9	Revealing the Impact of Hydrogen (H) on NBTI/PBTI of IGZTO FETs Under DC and AC Stress: Deep Dive into H Dynamics and Advanced Modeling Gan Liu,Zhilun Zhang,Dieu-Thuong Thi Trinh,Hanjie Li,Qiwen Kong,Chen Sun,Zuopu Zhou,Dong Zhang,Xiaolin Wang,Kaizhen Han,Yuye Kang,Bich-Yen Nguyen,Kai Ni,Gengchiau Liang,Xiao Gong	2024	3
10	Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI IEEE Transactions on Electron Devices ·Gan Liu,Qiwen Kong,Zuopu Zhou,Ying Xu,Chen Sun,Kaizhen Han,Yuye Kang,Dong Zhang,Xiaolin Wang,Yang Feng,Wei Shi,Bich-Yen Nguyen,Kai Ni,Gengchiau Liang,Xiao Gong	2024	1
11	Record-Low Coercive Field in ALD-Grown HZO Ferroelectric Films: Enabling Ultra-low Operation Voltage in World's First 2-Layer 3D Stacked Oxide Semiconductor 1T1C FeRAM Wei Shi,Dong Zhang,Zijie Zheng,Zuopu Zhou,Kaizhen Han,Chen Sun,Qiwen Kong,Yang Feng,Gengchiau Liang,Kai Ni,Jiezhi Chen,Xiao Gong	2024	0
12	Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity Nano Letters ·Tianhua Ren,Junyong Wang,Kaizhen Han,Yuye Kang,Annie Kumar,Gong Zhang,Zhe Wang,Rupert F. Oulton,Goki Eda,Xiao Gong	2023	1
13	Highly Scaled InGaZnO Ferroelectric Field-Effect Transistors and Ternary Content-Addressable Memory IEEE Transactions on Electron Devices ·Chen Sun,Kaizhen Han,Subhranu Samanta,Qiwen Kong,Jishen Zhang,Haiwen Xu,Xinke Wang,Annie Kumar,Chengkuan Wang,Zijie Zheng,Xunzhao Yin,Kai Ni,Xiao Gong	2022	21
14	Experimental Demonstration of An Inversion-Type Ferroelectric Capacitive Memory and its 1 kbit Crossbar Array Featuring High C_HCS/C_LCS, Fast Speed, and Long Retention 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) ·Zuopu Zhou,Leming Jiao,Jiuren Zhou,Zijie Zheng,Yue Chen,Kaizhen Han,Yuye Kang,Xiao Gong	2022	32
15	Ge_0.95Sn_0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width Nano Letters ·Yuye Kang,Shengqiang Xu,Kaizhen Han,Eugene Y.-J. Kong,Zhigang Song,Sheng Luo,Annie Kumar,Chengkuan Wang,W. J. Fan,Gengchiau Liang,Xiao Gong	2021	28
16	Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length IEEE Transactions on Electron Devices ·Subhranu Samanta,Kaizhen Han,Chen Sun,Chengkuan Wang,Annie Kumar,Aaron Thean,Xiao Gong	2021	35
17	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors With Sub-1.2 nm Equivalent Oxide Thickness IEEE Journal of the Electron Devices Society ·Kaizhen Han,Subhranu Samanta,Chen Sun,Xiao Gong	2021	8
18	Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure IEEE Electron Device Letters ·Chen Sun,Zijie Zheng,Kaizhen Han,Subhranu Samanta,Jiuren Zhou,Qiwen Kong,Jishen Zhang,Haiwen Xu,Annie Kumar,Chengkuan Wang,Xiao Gong	2021	34
19	High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling IEEE Transactions on Electron Devices ·Kaizhen Han,Subhranu Samanta,Shengqiang Xu,Ying Wu,Xiao Gong	2020	14
20	Improvement in Threshold Switching Performance Using Al₂O₃ Interfacial Layer in Ag/Al₂O₃/SiOₓ/W Cross-Point Platform IEEE Electron Device Letters ·Subhranu Samanta,Kaizhen Han,Sayan Das,Xiao Gong	2020	18

About Kaizhen Han

Kaizhen Han is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials, having authored 88 papers that have together received 1.1k indexed citations. Recurring topics across this work include Semiconductor materials and devices (52 papers), Ferroelectric and Negative Capacitance Devices (33 papers), Thin-Film Transistor Technologies (26 papers), Advanced Memory and Neural Computing (21 papers), Advancements in Semiconductor Devices and Circuit Design (16 papers), Photonic and Optical Devices (14 papers), ZnO doping and properties (12 papers) and Ferroelectric and Piezoelectric Materials (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (975 citations), Materials Chemistry (369 citations) and Polymers and Plastics (60 citations). Kaizhen Han has collaborated with scholars based in Singapore, United States and China. Frequent co-authors include Xiao Gong, Yuye Kang, Chen Sun, Subhranu Samanta, Chengkuan Wang, Zijie Zheng, Zuopu Zhou, Ying Wu, Jiuren Zhou and Qiwen Kong. Their work appears in journals such as Nano Letters, Journal of Applied Physics and Optics Express.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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