Junshuai Chai

617 total citations
57 papers, 423 citations indexed

About

Junshuai Chai is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Junshuai Chai has authored 57 papers receiving a total of 423 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 26 papers in Materials Chemistry and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Junshuai Chai's work include Ferroelectric and Negative Capacitance Devices (41 papers), Semiconductor materials and devices (37 papers) and MXene and MAX Phase Materials (16 papers). Junshuai Chai is often cited by papers focused on Ferroelectric and Negative Capacitance Devices (41 papers), Semiconductor materials and devices (37 papers) and MXene and MAX Phase Materials (16 papers). Junshuai Chai collaborates with scholars based in China, Singapore and Czechia. Junshuai Chai's co-authors include Xiaolei Wang, Hao Xu, Jinjuan Xiang, Jiahui Duan, Kai Han, Tianchun Ye, Wenwu Wang, Hongye Yuan, Pengfei Jiang and Jian-Tao Wang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Scientific Reports.

In The Last Decade

Junshuai Chai

48 papers receiving 418 citations

Peers

Junshuai Chai

EEE

AMPO

EOMM

Azimkhan Kozhakhmetov United States

D. Tsvetanova Belgium

Qiwen Kong Singapore

Siddarth Krishnan United States

Seokhyeong Lee United States

B. Sklénard France

Gaobo Xu China

Wenxing Lv China

Xiangnan Xie China

Azimkhan Kozhakhmetov United States

Junshuai Chai

238 ×0.7

EEE

339 ×1.8

45 ×0.7

AMPO

17 ×0.4

37 ×1.0

EOMM

Citations per year, relative to Junshuai Chai Junshuai Chai (= 1×) peers Azimkhan Kozhakhmetov

Countries citing papers authored by Junshuai Chai

Since Specialization

Citations

This map shows the geographic impact of Junshuai Chai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Junshuai Chai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Junshuai Chai more than expected).

Fields of papers citing papers by Junshuai Chai

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Junshuai Chai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Junshuai Chai. The network helps show where Junshuai Chai may publish in the future.

Co-authorship network of co-authors of Junshuai Chai

This figure shows the co-authorship network connecting the top 25 collaborators of Junshuai Chai. A scholar is included among the top collaborators of Junshuai Chai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Junshuai Chai. Junshuai Chai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Yang, Jia, Tao Hu, Xiaoqing Sun, et al.. (2025). Improved Memory Window and Retention of Silicon Channel Hf_0.5Zr_0.5O₂ FeFET by Using SiO₂/HfO₂/SiO₂ Gate Side Interlayer. 1–5. 1 indexed citations

Luo, Huaizhi, Haoyan Liu, Pengfei Yang, et al.. (2025). Reduction of Ge MOS interface defects via Al2O3 or trimethylaluminum pre-doping combined with post-oxidation. Materials Science in Semiconductor Processing. 197. 109692–109692.

Chai, Junshuai, Jiahui Duan, Jinjuan Xiang, et al.. (2024). Investigation of Hf₀.₅Zr₀.₅O₂ Ferroelectric Films at Low Thermal Budget (300 °C). IEEE Transactions on Electron Devices. 71(8). 5150–5155. 5 indexed citations

Xu, Shuangshuang, Junshuai Chai, Jiahui Duan, et al.. (2024). Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors. IEEE Transactions on Electron Devices. 71(8). 5081–5088. 6 indexed citations

Hu, Tao, Xiaoqing Sun, Jia Yang, et al.. (2024). Impact of Top SiO₂ Interlayer Thickness on Memory Window of Si Channel FeFET With TiN/SiO₂/Hf₀.₅Zr₀.₅O₂/SiOx/Si (MIFIS) Gate Structure. IEEE Transactions on Electron Devices. 71(11). 6698–6705. 8 indexed citations

Yuan, Hongye, Tiancheng Gong, Pengfei Jiang, et al.. (2024). In-Depth Understanding of Nitridation-Induced Endurance Enhancement in FeFETs: Defect Properties and Dynamics Characterized by Nonradiative Multi-Phonon Model. IEEE Transactions on Electron Devices. 71(9). 5388–5392. 4 indexed citations

Yang, Jia, Xiaoqing Sun, Junshuai Chai, et al.. (2024). Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer. IEEE Transactions on Electron Devices. 71(12). 7489–7494. 4 indexed citations

Chai, Junshuai, Kai Han, Yanrong Wang, et al.. (2024). Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer. IEEE Transactions on Electron Devices. 71(10). 6022–6026. 2 indexed citations

Chai, Junshuai, Xiaoqing Sun, Kai Han, et al.. (2024). Evidence of Oxygen Vacancy Generation as Physical Origin of Endurance Fatigue of Si FeFET With TiN/Hf_0.5Zr_0.5O₂/SiO_x/Si Gate-Stacks. IEEE Transactions on Electron Devices. 71(12). 7461–7469.

10.

Yuan, Hongye, Tiancheng Gong, Yuan Wang, et al.. (2024). Spatial and Energetic Mapping of Traps in FeFET During Endurance Process by Advanced Trap Characterization Platform. IEEE Electron Device Letters. 45(12). 2371–2374. 44 indexed citations

11.

Chai, Junshuai, Wenjuan Xiong, Shuai Yang, et al.. (2023). Regulating ferroelectricity in Hf0.5Zr0.5O2 thin films: Exploring the combined impact of oxygen vacancy and electrode stresses. Journal of Applied Physics. 134(17). 4 indexed citations

12.

Zhan, Xuepeng, Junshuai Chai, Hao Xu, et al.. (2023). Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing. IEEE Transactions on Electron Devices. 70(6). 3372–3377. 13 indexed citations

13.

Sun, Xiaoqing, et al.. (2023). Charge trapping effect at the interface of ferroelectric/interlayer in the ferroelectric field effect transistor gate stack. Chinese Physics B. 32(8). 87701–87701. 1 indexed citations

14.

Chen, Bo, Chengcheng Wang, Xuepeng Zhan, et al.. (2023). Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. Microelectronics Journal. 137. 105818–105818. 1 indexed citations

15.

Sun, Xiaoqing, Junshuai Chai, Jiahui Duan, et al.. (2023). A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure. IEEE Transactions on Electron Devices. 70(9). 4641–4646. 3 indexed citations

16.

Li, Xiaopeng, Wei Wei, Jixuan Wu, et al.. (2022). Experimental investigations on ferroelectric dielectric breakdown in sub-10 nm Hf _0.5 Zr _0.5 O ₂ film through comprehensive TDDB characterizations. Japanese Journal of Applied Physics. 61(10). 101002–101002. 5 indexed citations

17.

Zhao, Guoqing, Wei Wei, Lu Tai, et al.. (2022). Suppressing Interfacial Layer Degradation in $\text{Hf}_{0.5}\text{Zr}_{0.5}\mathrm{O}_{2}$-based FeFETs Using a Pre-erase Strategy during Program/Erase Cycling. 1–2. 2 indexed citations

18.

Chai, Junshuai, et al.. (2020). Structural and electronic properties of BaSi2(100) thin film on Si(111) substrate. Journal of Materials Science. 55(22). 9483–9492. 3 indexed citations

19.

Bu, Kun, et al.. (2020). Novel electronic properties of monoclinic MP4 (M = Cr, Mo, W) compounds with or without topological nodal line. Scientific Reports. 10(1). 11502–11502. 13 indexed citations

20.

Deng, Lijuan, et al.. (2016). The theoretical study of the ground-state polar chromium-alkali-metal-atom molecules. Chemical Physics Letters. 650. 69–72.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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