J. Neil Merrett

405 total citations
29 papers, 312 citations indexed

About

J. Neil Merrett is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Materials Chemistry. According to data from OpenAlex, J. Neil Merrett has authored 29 papers receiving a total of 312 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 7 papers in Mechanical Engineering and 6 papers in Materials Chemistry. Recurrent topics in J. Neil Merrett's work include Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (13 papers) and Electromagnetic Compatibility and Noise Suppression (8 papers). J. Neil Merrett is often cited by papers focused on Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (13 papers) and Electromagnetic Compatibility and Noise Suppression (8 papers). J. Neil Merrett collaborates with scholars based in United States, Germany and Egypt. J. Neil Merrett's co-authors include David C. Sheridan, John D. Cressler, Guofu Niu, C. Ellis, Chin‐Che Tin, James D. Scofield, Anant Agarwal, Scott Leslie, Rooban Venkatesh K.G. Thirumalai and Albert V. Davydov and has published in prestigious journals such as Applied Physics Letters, Carbon and Thin Solid Films.

In The Last Decade

J. Neil Merrett

27 papers receiving 282 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
J. Neil Merrett United States	10	245	79	52	48	36	29	312
Chuck Hsu Taiwan	13	306 1.2×	228 2.9×	66 1.3×	32 0.7×	63 1.8×	23	390
Jing‐Cheng Lin Taiwan	10	308 1.3×	102 1.3×	42 0.8×	171 3.6×	28 0.8×	17	402
G. Landis United States	11	312 1.3×	135 1.7×	120 2.3×	72 1.5×	29 0.8×	18	365
Donghyi Koh United States	8	200 0.8×	105 1.3×	39 0.8×	32 0.7×	39 1.1×	17	250
Jeff Gambino United States	10	310 1.3×	62 0.8×	60 1.2×	108 2.3×	48 1.3×	59	344
Michael Belyansky United States	12	191 0.8×	101 1.3×	30 0.6×	16 0.3×	52 1.4×	29	262
E. Pettenpaul Germany	8	288 1.2×	100 1.3×	65 1.3×	34 0.7×	14 0.4×	15	351
Bernd Hähnlein Germany	10	127 0.5×	188 2.4×	113 2.2×	53 1.1×	130 3.6×	37	336
D. Delille France	8	178 0.7×	39 0.5×	29 0.6×	25 0.5×	28 0.8×	26	225
Y. Kishi Japan	9	354 1.4×	268 3.4×	47 0.9×	23 0.5×	49 1.4×	22	400

Countries citing papers authored by J. Neil Merrett

Since Specialization

Citations

This map shows the geographic impact of J. Neil Merrett's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Neil Merrett with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Neil Merrett more than expected).

Fields of papers citing papers by J. Neil Merrett

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Neil Merrett. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Neil Merrett. The network helps show where J. Neil Merrett may publish in the future.

Co-authorship network of co-authors of J. Neil Merrett

This figure shows the co-authorship network connecting the top 25 collaborators of J. Neil Merrett. A scholar is included among the top collaborators of J. Neil Merrett based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Neil Merrett. J. Neil Merrett is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Isaacs‐Smith, Tamara, et al.. (2022). High conductivity β-Ga2O3 formed by hot Si ion implantation. Applied Physics Letters. 121(26). 15 indexed citations

Zhang, Qiuhong, et al.. (2016). The Effect of Buffer Layer on CNT Structure and CNT/Copper Interfacial Properties. MRS Advances. 1(20). 1447–1452. 1 indexed citations

Leedy, Kevin, et al.. (2015). Influence of oxide buffer layers on the growth of carbon nanotube arrays on carbon substrates. Carbon. 87. 175–185. 20 indexed citations

Burke, Jan, Kevin Leedy, Bang‐Hung Tsao, et al.. (2013). The Effects of Surface Treatments on the Growth of CNTs on 3-Dimensional Carbon Foam Structures. Journal of Bioresource Management. 1(2013). 741–744. 1 indexed citations

Thirumalai, Rooban Venkatesh K.G., et al.. (2012). Use of Vanadium Doping for Compensated and Semi-Insulating SiC Epitaxial Layers for SiC Device Applications. Materials science forum. 717-720. 133–136. 2 indexed citations

Thirumalai, Rooban Venkatesh K.G., et al.. (2012). Growth on Differently Oriented Sidewalls of SiC Mesas As a Way of Achieving Well-Aligned SiC Nanowires. Crystal Growth & Design. 12(5). 2221–2225. 10 indexed citations

Thirumalai, Rooban Venkatesh K.G., Yaroslav Koshka, Siddarth Sundaresan, et al.. (2011). Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates. Crystal Growth & Design. 11(2). 538–541. 29 indexed citations

Scofield, James D., et al.. (2010). Performance and Reliability Characteristics of 1200 V, 100 A, 200°C Half-Bridge SiC MOSFET-JBS Diode Power Modules. Additional Conferences (Device Packaging HiTEC HiTEN & CICMT). 2010(HITEC). 289–296. 37 indexed citations

Scofield, James D., J. Neil Merrett, Jim Richmond, Anant Agarwal, & Scott Leslie. (2010). Electrical and Thermal Performance of 1200 V, 100 A, 200°C 4H-SiC MOSFET-Based Power Switch Modules. Materials science forum. 645-648. 1119–1122. 17 indexed citations

10.

Merrett, J. Neil, et al.. (2010). 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method. Materials science forum. 645-648. 925–928. 1 indexed citations

11.

Merrett, J. Neil, et al.. (2009). Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation to p-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth. Journal of Electronic Materials. 39(1). 34–38. 7 indexed citations

12.

Merrett, J. Neil, John R. Williams, John D. Cressler, et al.. (2005). Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs. Materials science forum. 483-485. 885–888. 13 indexed citations

13.

Sankin, Igor, et al.. (2004). A Review of SiC Power Switch: Achievements, Difficulties and Perspectives. Materials science forum. 457-460. 1249–1252. 6 indexed citations

14.

Casady, Jeff B., et al.. (2003). Silicon Carbide Power Devices and Processing. MRS Proceedings. 764. 1 indexed citations

15.

Sankin, Igor, et al.. (2003). Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination. Materials science forum. 433-436. 879–882. 6 indexed citations

16.

Merrett, J. Neil, Tamara Isaacs‐Smith, David C. Sheridan, & John R. Williams. (2002). Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes. Journal of Electronic Materials. 31(6). 635–639. 7 indexed citations

17.

Sheridan, David C., J. Neil Merrett, John D. Cressler, et al.. (2001). Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination. Materials science forum. 353-356. 687–690. 3 indexed citations

18.

Merrett, J. Neil, David C. Sheridan, John R. Williams, C. C. Tin, & John D. Cressler. (2001). A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices. Materials science forum. 353-356. 623–626. 1 indexed citations

19.

Sheridan, David C., Guofu Niu, J. Neil Merrett, et al.. (2000). Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination. Materials science forum. 338-342. 1339–1342. 2 indexed citations

20.

Sheridan, David C., Guofu Niu, J. Neil Merrett, et al.. (2000). Design and fabrication of planar guard ring termination for high-voltage SiC diodes. Solid-State Electronics. 44(8). 1367–1372. 92 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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