S. Richter

401 total citations
22 papers, 335 citations indexed

About

S. Richter is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Infectious Diseases. According to data from OpenAlex, S. Richter has authored 22 papers receiving a total of 335 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 12 papers in Biomedical Engineering and 0 papers in Infectious Diseases. Recurrent topics in S. Richter's work include Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (20 papers) and Nanowire Synthesis and Applications (12 papers). S. Richter is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and devices (20 papers) and Nanowire Synthesis and Applications (12 papers). S. Richter collaborates with scholars based in Germany, France and China. S. Richter's co-authors include Qing‐Tai Zhao, S. Mantl, K.K. Bourdelle, A. Schäfer, Stefan Trellenkamp, Matthias Schmidt, A. Nichau, Jean‐Michel Hartmann, Lars Knoll and R. Lupták and has published in prestigious journals such as Applied Physics Letters, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

S. Richter

21 papers receiving 315 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
S. Richter Germany 10 332 96 8 8 8 22 335
Jie Fang Italy 8 310 0.9× 82 0.9× 5 0.6× 7 0.9× 19 2.4× 16 322
Thomas W. Brown United States 9 211 0.6× 83 0.9× 7 0.9× 5 0.6× 14 1.8× 24 246
J. Malinowski United States 9 306 0.9× 42 0.4× 26 3.3× 11 1.4× 15 1.9× 30 318
Said Rami United States 7 206 0.6× 27 0.3× 13 1.6× 12 1.5× 10 1.3× 21 225
Zhaonian Yang China 7 324 1.0× 65 0.7× 3 0.4× 7 0.9× 11 1.4× 40 331
I.A. Koullias United States 6 324 1.0× 83 0.9× 17 2.1× 4 0.5× 5 0.6× 7 329
Pratik Patel United States 8 410 1.2× 106 1.1× 16 2.0× 3 0.4× 11 1.4× 11 415
Chih-Chun Tang Taiwan 7 292 0.9× 102 1.1× 10 1.3× 2 0.3× 8 1.0× 11 301
K. Petrarca United States 5 210 0.6× 43 0.4× 11 1.4× 5 0.6× 8 1.0× 6 212
Chang-Tsung Fu Taiwan 9 298 0.9× 82 0.9× 13 1.6× 5 0.6× 2 0.3× 12 301

Countries citing papers authored by S. Richter

Since Specialization
Citations

This map shows the geographic impact of S. Richter's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Richter with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Richter more than expected).

Fields of papers citing papers by S. Richter

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Richter. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Richter. The network helps show where S. Richter may publish in the future.

Co-authorship network of co-authors of S. Richter

This figure shows the co-authorship network connecting the top 25 collaborators of S. Richter. A scholar is included among the top collaborators of S. Richter based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with S. Richter. S. Richter is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Richter, S., et al.. (2025). Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests. Microelectronics Reliability. 173. 115844–115844.
2.
Richter, S., Stefan Trellenkamp, A. Schäfer, et al.. (2015). Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity. Solid-State Electronics. 108. 97–103. 11 indexed citations
3.
Richter, S., et al.. (2015). Experimental demonstration of planar SiGe on Si TFETs with counter doped pocket. 1. 297–300. 2 indexed citations
4.
Richter, S., Lars Knoll, Stefan Trellenkamp, et al.. (2014). Silicon–germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions. Solid-State Electronics. 98. 75–80. 11 indexed citations
5.
Knoll, Lars, S. Richter, A. Nichau, et al.. (2014). Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics. Solid-State Electronics. 98. 32–37. 7 indexed citations
6.
Richter, S., Stefan Trellenkamp, A. Schäfer, et al.. (2014). Tunnel-FET inverters for ultra-low power logic with supply voltage down to V<inf>DD</inf> &#x003D; 0.2 V. 13–16. 4 indexed citations
7.
Richter, S., S. А. Vitusevich, Sergii Pud, et al.. (2013). Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs. 256–259. 3 indexed citations
8.
Knoll, Lars, S. Richter, A. Nichau, et al.. (2013). Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 &#x00B5;A/&#x00B5;m @ V<inf>DD</inf>=1.1V. 97–100. 6 indexed citations
9.
Richter, S., Lars Knoll, Stefan Trellenkamp, et al.. (2013). SiGe on SOI nanowire array TFETs with homo- and heterostructure tunnel junctions. 25–28. 7 indexed citations
10.
Knoll, Lars, Qing‐Tai Zhao, A. Nichau, et al.. (2013). Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling. Institutional Research Information System (University of Udine). 4.4.1–4.4.4. 62 indexed citations
11.
Mantl, S., Lars Knoll, Matthias Schmidt, et al.. (2013). Si based tunnel field effect transistors: Recent achievements. 15–20. 5 indexed citations
12.
Schmidt, Matthias, Lars Knoll, S. Richter, et al.. (2012). Si/SiGe hetero-structure tunneling field effect transistors with in-situ doped SiGe source. 191–194. 6 indexed citations
13.
Schmidt, Matthias, Renato Amaral Minamisawa, S. Richter, et al.. (2012). Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors. Solid-State Electronics. 71. 42–47. 13 indexed citations
14.
Zhao, Qing‐Tai, Matthias Schmidt, S. Richter, et al.. (2012). Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source. Solid-State Electronics. 74. 97–101. 28 indexed citations
15.
Richter, S., C. Sandow, A. Nichau, et al.. (2012). $\Omega$-Gated Silicon and Strained Silicon Nanowire Array Tunneling FETs. IEEE Electron Device Letters. 33(11). 1535–1537. 41 indexed citations
16.
Richter, S., Stefan Trellenkamp, Matthias Schmidt, et al.. (2012). Strained silicon nanowire array MOSFETs with high-k/metal gate stack. 10. 53–56. 1 indexed citations
17.
Zhao, Qing‐Tai, Matthias Schmidt, S. Richter, et al.. (2011). Tunneling field-effect transistor with a strained Si channel and a Si<inf>0.5</inf>Ge<inf>0.5</inf> source. 251–254. 4 indexed citations
18.
Schmidt, Matthias, Renato Amaral Minamisawa, S. Richter, et al.. (2011). Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors. 56. 1–4. 5 indexed citations
19.
Becker, Dale, H. Smith, T. G. McNamara, et al.. (2002). Mid-frequency simultaneous switching noise in computer systems. 676–681. 16 indexed citations
20.
Becker, Dale, G. Katopis, M. McAllister, et al.. (1998). Modeling, simulation, and measurement of mid-frequency simultaneous switching noise in computer systems. IEEE Transactions on Components Packaging and Manufacturing Technology Part B. 21(2). 157–163. 69 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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