Lars Knoll

1.5k total citations
103 papers, 1.2k citations indexed

About

Lars Knoll is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Lars Knoll has authored 103 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 88 papers in Electrical and Electronic Engineering, 38 papers in Atomic and Molecular Physics, and Optics and 19 papers in Biomedical Engineering. Recurrent topics in Lars Knoll's work include Semiconductor materials and devices (71 papers), Silicon Carbide Semiconductor Technologies (45 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). Lars Knoll is often cited by papers focused on Semiconductor materials and devices (71 papers), Silicon Carbide Semiconductor Technologies (45 papers) and Advancements in Semiconductor Devices and Circuit Design (43 papers). Lars Knoll collaborates with scholars based in Germany, Switzerland and France. Lars Knoll's co-authors include S. Mantl, Qing‐Tai Zhao, Stefan Trellenkamp, K.K. Bourdelle, A. Schäfer, D. Zajfman, A. Nichau, L. Selmi, Z. Vager and D. Schwalm and has published in prestigious journals such as Science, Physical Review Letters and The Journal of Chemical Physics.

In The Last Decade

Lars Knoll

98 papers receiving 1.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Lars Knoll Germany	19	812	459	222	168	66	103	1.2k
Ingo Breunig Germany	22	1.3k 1.6×	1.3k 2.8×	104 0.5×	123 0.7×	138 2.1×	83	1.5k
F. Tauser Germany	9	817 1.0×	877 1.9×	90 0.4×	283 1.7×	108 1.6×	17	1.1k
V. A. Kochelap Ukraine	17	581 0.7×	636 1.4×	181 0.8×	73 0.4×	119 1.8×	117	932
John K. Liu United States	15	568 0.7×	384 0.8×	84 0.4×	144 0.9×	86 1.3×	64	667
A. Bartels Germany	6	540 0.7×	612 1.3×	109 0.5×	171 1.0×	41 0.6×	6	779
A.Y. Cho United States	18	1.0k 1.3×	956 2.1×	94 0.4×	161 1.0×	84 1.3×	68	1.3k
Alex Harwit United States	10	497 0.6×	719 1.6×	101 0.5×	153 0.9×	130 2.0×	32	875
S. V. Morozov Russia	18	801 1.0×	759 1.7×	69 0.3×	235 1.4×	168 2.5×	134	973
Samuel D. Hawkins United States	19	939 1.2×	709 1.5×	121 0.5×	124 0.7×	180 2.7×	58	1.0k
И. С. Васильевский Russia	13	420 0.5×	368 0.8×	75 0.3×	53 0.3×	79 1.2×	100	527

Countries citing papers authored by Lars Knoll

Since Specialization

Citations

This map shows the geographic impact of Lars Knoll's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Lars Knoll with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Lars Knoll more than expected).

Fields of papers citing papers by Lars Knoll

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Lars Knoll. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Lars Knoll. The network helps show where Lars Knoll may publish in the future.

Co-authorship network of co-authors of Lars Knoll

This figure shows the co-authorship network connecting the top 25 collaborators of Lars Knoll. A scholar is included among the top collaborators of Lars Knoll based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Lars Knoll. Lars Knoll is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Stark, Roger, et al.. (2024). Oxide Reliability of Gate Biased Trench Si-IGBTs Irradiated with Protons and Neutrons. ePubs (Science and Technology Facilities Council, Research Councils UK). 60–63.

Maresca, Luca, V. Terracciano, Michele Riccio, et al.. (2024). SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 360. 75–80.

Yang, Dong, et al.. (2023). Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs. Key engineering materials. 945. 77–82. 2 indexed citations

Kovacevic-Badstuebner, Ivana, Roger Stark, Alexander Tsibizov, et al.. (2023). Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs. Materials science forum. 1091. 67–71. 5 indexed citations

Romano, G., et al.. (2023). Investigation on Switching Characteristics of 3.3kV SiC Power MOSFETs with SiO<sub>2</sub>/ SiN Gate Stack. Materials science forum. 1091. 49–53.

Mihăilă, Andrei, et al.. (2022). Performance Comparison of 6.5 kV SiC PiN Diode with 6.5 kV SiC JBS and Si Diodes. Materials science forum. 1062. 588–592. 2 indexed citations

Wirths, Stephan, Enea Bianda, Andrei Mihăilă, et al.. (2020). Threshold Voltage Stability Study on Power SiC MOSFETs Using High-k Dielectrics. 1–8. 1 indexed citations

Wirths, Stephan, Andrei Mihăilă, Marco Bellini, et al.. (2020). Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability. 226–229. 10 indexed citations

Hechtfischer, U., J. Levin, M. Lange, et al.. (2019). Near-threshold photodissociation of cool OH+ to O + H+ and O+ + H. The Journal of Chemical Physics. 151(4). 44303–44303. 4 indexed citations

10.

Knoll, Lars, Andrei Mihăilă, Lukas Kranz, et al.. (2018). Dynamic switching and short circuit capability of 6.5kV silicon carbide MOSFETs. 9 indexed citations

11.

Alfieri, Giovanni, et al.. (2018). The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC. Journal of Applied Physics. 123(17). 3 indexed citations

12.

Knoll, Lars, V. S. Teodorescu, & Renato Amaral Minamisawa. (2016). Ultra-Thin Epitaxial Tungsten Carbide Schottky Contacts in 4H-SiC. IEEE Electron Device Letters. 37(10). 1318–1320. 14 indexed citations

13.

Schulte‐Braucks, C., et al.. (2014). Experimental demonstration of improved analog device performance in GAA-NW-TFETs. Institutional Research Information System (University of Udine). 178–181. 7 indexed citations

14.

Minamisawa, Renato Amaral, Matthias Schmidt, Lars Knoll, et al.. (2012). Hole Transport in Strained $\hbox{Si}_{0.5} \hbox{Ge}_{0.5}$ QW-MOSFETs With $\langle\hbox{110}\rangle$ and $\langle\hbox{100}\rangle$ Channel Orientations. IEEE Electron Device Letters. 33(8). 1105–1107. 9 indexed citations

15.

Zhao, Qing‐Tai, Lars Knoll, Bo Zhang, et al.. (2012). Ultrathin epitaxial Ni-silicide contacts on (1 0 0) Si and SiGe: Structural and electrical investigations. Microelectronic Engineering. 107. 190–195. 8 indexed citations

16.

Knoll, Lars, Qing‐Tai Zhao, R. Lupták, et al.. (2011). 20nm Gate length Schottky MOSFETs with ultra thin NiSi/epitaxial NiSi<inf>2</inf> source/drain. 87. 1–4. 4 indexed citations

17.

Zhao, Qing‐Tai, S. Feste, Lars Knoll, et al.. (2011). NiSi nano-contacts to strained and unstrained silicon nanowires. 1–3. 3 indexed citations

18.

Zhao, Qing‐Tai, S. Feste, Lars Knoll, et al.. (2010). Electrical characterization of strained and unstrained silicon nanowires with nickel silicide contacts. Nanotechnology. 21(10). 105701–105701. 19 indexed citations

19.

Wester, Roland, U. Hechtfischer, Lars Knoll, et al.. (2002). Relaxation dynamics of deuterated formyl and isoformyl cations. The Journal of Chemical Physics. 116(16). 7000–7011. 17 indexed citations

20.

Krohn, S., M. Lange, M. Grieser, et al.. (2001). Rate Coefficients and Final States for the Dissociative Recombination ofLiH+. Physical Review Letters. 86(18). 4005–4008. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact