Thomas Basler

1.1k total citations
77 papers, 841 citations indexed

About

Thomas Basler is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanical Engineering. According to data from OpenAlex, Thomas Basler has authored 77 papers receiving a total of 841 indexed citations (citations by other indexed papers that have themselves been cited), including 75 papers in Electrical and Electronic Engineering, 7 papers in Condensed Matter Physics and 6 papers in Mechanical Engineering. Recurrent topics in Thomas Basler's work include Silicon Carbide Semiconductor Technologies (70 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Semiconductor materials and devices (27 papers). Thomas Basler is often cited by papers focused on Silicon Carbide Semiconductor Technologies (70 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Semiconductor materials and devices (27 papers). Thomas Basler collaborates with scholars based in Germany, Austria and China. Thomas Basler's co-authors include Josef Lutz, Dethard Peters, Thomas Aichinger, Romain Esteve, W. Bergner, Ralf Siemieniec, Don Bredle, Konrad Reinhart, Andreas Meier‐Hellmann and R. P. Jakob and has published in prestigious journals such as SHILAP Revista de lepidopterología, IEEE Transactions on Power Electronics and IEEE Transactions on Electron Devices.

In The Last Decade

Thomas Basler

64 papers receiving 823 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Thomas Basler Germany 17 743 68 57 40 38 77 841
Yufeng Jin China 12 360 0.5× 40 0.6× 41 0.7× 4 0.1× 1 0.0× 104 489
D. Goren Israel 14 506 0.7× 4 0.1× 78 1.4× 4 0.1× 9 0.2× 39 615
Slavko Mocevic United States 13 558 0.8× 44 0.6× 20 0.4× 37 0.9× 26 575
Zhou Dong United States 12 369 0.5× 32 0.5× 37 0.6× 21 0.5× 41 416
Jizheng Qiu United States 11 316 0.4× 77 1.1× 32 0.6× 19 0.5× 20 374
D. Braun Switzerland 10 279 0.4× 24 0.4× 59 1.0× 98 2.5× 21 327
Suk-Ho Ahn South Korea 13 401 0.5× 59 0.9× 79 1.4× 149 3.7× 28 454
Ivana Kovacevic-Badstuebner Switzerland 12 398 0.5× 53 0.8× 47 0.8× 26 0.7× 55 423
Eric Persson United States 9 442 0.6× 46 0.7× 8 0.1× 63 1.6× 29 465
Mikhail V. Nesterenko Ukraine 10 249 0.3× 21 0.3× 156 2.7× 13 0.3× 2 0.1× 126 400

Countries citing papers authored by Thomas Basler

Since Specialization
Citations

This map shows the geographic impact of Thomas Basler's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Thomas Basler with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Thomas Basler more than expected).

Fields of papers citing papers by Thomas Basler

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Thomas Basler. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Thomas Basler. The network helps show where Thomas Basler may publish in the future.

Co-authorship network of co-authors of Thomas Basler

This figure shows the co-authorship network connecting the top 25 collaborators of Thomas Basler. A scholar is included among the top collaborators of Thomas Basler based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Thomas Basler. Thomas Basler is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Richter, S., et al.. (2025). Reliability of discrete SiC MOSFETs under severe temperature-shock and power cycling tests. Microelectronics Reliability. 173. 115844–115844.
2.
Lutz, Josef, et al.. (2025). Influence of Switching Loss Magnitude on Lifetime During a Switch-Mode Power Cycling Test of SiC MOSFETs. IEEE Transactions on Power Electronics. 40(8). 10555–10566. 1 indexed citations
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Kumar, Dilip, et al.. (2025). Investigation of Overcurrent Turn-Off Robustness of 1200 V SiC MOSFETs. Key engineering materials. 1024. 29–37.
6.
Lutz, Josef, et al.. (2025). Investigation on the high temperature behaviour of p-GaN HEMTs by different temperature sensitive electrical parameters. SHILAP Revista de lepidopterología. 12. 100103–100103. 1 indexed citations
7.
Lutz, Josef, et al.. (2025). Advanced power cycling test strategies on discrete SiC MOSFETs in different operating modes and the impact on lifetime. Microelectronics Reliability. 170. 115786–115786. 1 indexed citations
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Böhm, Christoph, et al.. (2024). 3<sup>rd</sup> Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 360. 1–8. 1 indexed citations
10.
Xie, Dong, et al.. (2024). Simple Vector Calculation and Constraint-Based Fault-Tolerant Control for a Single-Phase CHBMC. IEEE Transactions on Power Electronics. 40(1). 2028–2041. 29 indexed citations
11.
Lutz, Josef, et al.. (2024). Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 360. 9–15. 1 indexed citations
12.
Günther, Marco, et al.. (2023). Influence of thermal interface material using discrete Si-IGBTs and consideration of power cycling conditions. Microelectronics Reliability. 150. 115089–115089. 1 indexed citations
13.
Basler, Thomas, et al.. (2023). Investigation of the Gate Voltage Overshoot of IGBTs Under Short Circuit Type II Condition. IEEE Transactions on Electron Devices. 70(4). 1763–1768. 1 indexed citations
14.
Xie, Dong, et al.. (2023). OC Switch Fault Diagnosis, Pre- and Postfault DC Voltage Balancing Control for a CHBMC Using SVM Concept. IEEE Transactions on Power Electronics. 39(1). 677–692. 24 indexed citations
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Basler, Thomas, et al.. (2019). Characterization of the parasitic turn-on behavior of discrete CoolSiC??? MOSFETs. 1–7. 3 indexed citations
18.
Basler, Thomas, et al.. (2018). Practical Aspects and Body Diode Robustness of a 1200 V SiC Trench MOSFET. 1–7. 18 indexed citations
19.
Peters, Dethard, Ralf Siemieniec, Thomas Aichinger, et al.. (2017). Performance and ruggedness of 1200V SiC — Trench — MOSFET. 239–242. 114 indexed citations
20.
Basler, Thomas, et al.. (2015). Surge Current Behaviour of Different IGBT Designs. 1–10. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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