T. Efland

549 total citations
31 papers, 417 citations indexed

About

T. Efland is a scholar working on Electrical and Electronic Engineering, Automotive Engineering and Biomedical Engineering. According to data from OpenAlex, T. Efland has authored 31 papers receiving a total of 417 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 2 papers in Automotive Engineering and 2 papers in Biomedical Engineering. Recurrent topics in T. Efland's work include Silicon Carbide Semiconductor Technologies (21 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Semiconductor materials and devices (17 papers). T. Efland is often cited by papers focused on Silicon Carbide Semiconductor Technologies (21 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers) and Semiconductor materials and devices (17 papers). T. Efland collaborates with scholars based in United States. T. Efland's co-authors include S. Pendharkar, H. Shichijo, Alec Morton, John A. Carpenter, J. Antonio Travieso-Rodríguez, Ching‐Yi Tsai, Sean Keller, Tobias Keller, R. Todd and S. Merchant and has published in prestigious journals such as IEEE Transactions on Electron Devices and Microelectronics Journal.

In The Last Decade

T. Efland

30 papers receiving 385 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Efland United States 13 416 24 12 11 8 31 417
A. Andreini Italy 9 270 0.6× 21 0.9× 10 0.8× 5 0.5× 4 0.5× 38 276
Xuemei Xi United States 10 382 0.9× 49 2.0× 28 2.3× 4 0.4× 11 1.4× 35 400
C. Contiero Italy 12 460 1.1× 34 1.4× 13 1.1× 9 0.8× 4 0.5× 27 466
N. Sadachika Japan 9 303 0.7× 21 0.9× 14 1.2× 7 0.6× 2 0.3× 38 310
A. Matt Francis United States 9 325 0.8× 13 0.5× 82 6.8× 11 1.0× 8 1.0× 12 328
G. Kamoulakos Greece 9 309 0.7× 84 3.5× 13 1.1× 5 0.5× 12 1.5× 22 316
Nattapol Damrongplasit United States 10 448 1.1× 82 3.4× 5 0.4× 9 0.8× 13 1.6× 23 468
S. Moloudi United States 6 296 0.7× 68 2.8× 7 0.6× 20 1.8× 4 0.5× 7 311
J.E. Vinson United States 7 311 0.7× 25 1.0× 64 5.3× 3 0.3× 15 1.9× 14 340
Jian‐Hsing Lee Taiwan 12 387 0.9× 6 0.3× 26 2.2× 26 2.4× 11 1.4× 74 393

Countries citing papers authored by T. Efland

Since Specialization
Citations

This map shows the geographic impact of T. Efland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Efland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Efland more than expected).

Fields of papers citing papers by T. Efland

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Efland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Efland. The network helps show where T. Efland may publish in the future.

Co-authorship network of co-authors of T. Efland

This figure shows the co-authorship network connecting the top 25 collaborators of T. Efland. A scholar is included among the top collaborators of T. Efland based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Efland. T. Efland is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Pendharkar, S., et al.. (2010). Current status and future trends in silicon power devices. 13.1.1–13.1.4. 17 indexed citations
2.
Pendharkar, S., et al.. (2004). 7 to 30V state-of-art power device implementation in 0.25 μm LBC7 BiCMOS-DMOS process technology. 419–422. 15 indexed citations
3.
Efland, T.. (2004). The Earth is mobile-power. 2–9. 12 indexed citations
4.
Pendharkar, S., et al.. (2004). Performance trade-offs and optimization of low side low voltage integrated FETs. 160–163. 1 indexed citations
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Efland, T., Tobias Keller, Sean Keller, & J. Antonio Travieso-Rodríguez. (2002). Optimized complementary 40 V power LDMOS-FETs use existing fabrication steps in submicron CMOS technology. 399–402. 18 indexed citations
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Tessmer, A.J., et al.. (2002). A 0.7 μm linear BiCMOS/DMOS technology for mixed-signal/power applications. 155–157. 3 indexed citations
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Efland, T., et al.. (2002). The optimization of LBC6 power/mixed-signal IC BiCMOS process. 192–195. 6 indexed citations
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Efland, T., et al.. (2002). The load dump (automobiles). 73–78. 5 indexed citations
15.
Hower, P.L., S. Merchant, T. Efland, et al.. (2002). Avalanche-induced thermal instability in Ldmos transistors. 153–156. 27 indexed citations
16.
Efland, T., et al.. (2002). Lateral thinking about power devices (LDMOS). 679–682. 36 indexed citations
17.
Efland, T., et al.. (2002). Bipolar issues in advanced power BiCMOS technology. 20–27. 3 indexed citations
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Pendharkar, S., et al.. (2002). SCR-LDMOS. A novel LDMOS device with ESD robustness. 341–344. 39 indexed citations
20.
Shichijo, H., et al.. (2001). High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process. IEEE Transactions on Electron Devices. 48(8). 1751–1755. 73 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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