C. Abbate

851 total citations
46 papers, 674 citations indexed

About

C. Abbate is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Mechanical Engineering. According to data from OpenAlex, C. Abbate has authored 46 papers receiving a total of 674 indexed citations (citations by other indexed papers that have themselves been cited), including 45 papers in Electrical and Electronic Engineering, 6 papers in Condensed Matter Physics and 4 papers in Mechanical Engineering. Recurrent topics in C. Abbate's work include Silicon Carbide Semiconductor Technologies (41 papers), Electrostatic Discharge in Electronics (22 papers) and Electromagnetic Compatibility and Noise Suppression (20 papers). C. Abbate is often cited by papers focused on Silicon Carbide Semiconductor Technologies (41 papers), Electrostatic Discharge in Electronics (22 papers) and Electromagnetic Compatibility and Noise Suppression (20 papers). C. Abbate collaborates with scholars based in Italy and Norway. C. Abbate's co-authors include G. Busatto, Francesco Iannuzzo, A. Sanseverino, F. Velardi, J. Wyss, P. Cova, Nicola Delmonte, S. Mattiazzo, Daniele Marciano and Horst Fischer and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Electron Devices and Applied Sciences.

In The Last Decade

C. Abbate

44 papers receiving 652 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Abbate Italy	15	658	125	33	31	29	46	674
Andrew N. Lemmon United States	16	925 1.4×	111 0.9×	40 1.2×	33 1.1×	26 0.9×	70	958
Chi Xu United States	10	442 0.7×	160 1.3×	22 0.7×	13 0.4×	27 0.9×	24	472
Dan Kinzer United States	11	318 0.5×	89 0.7×	24 0.7×	21 0.7×	16 0.6×	31	333
Shi Pu United States	14	715 1.1×	71 0.6×	35 1.1×	20 0.6×	41 1.4×	27	736
Juan Colmenares Sweden	15	627 1.0×	51 0.4×	55 1.7×	21 0.7×	19 0.7×	25	647
Jan Böcker Germany	10	383 0.6×	187 1.5×	16 0.5×	81 2.6×	17 0.6×	17	425
Umamaheswara Vemulapati Switzerland	12	610 0.9×	38 0.3×	37 1.1×	35 1.1×	42 1.4×	41	628
T. Laska Germany	12	813 1.2×	68 0.5×	134 4.1×	22 0.7×	33 1.1×	27	845
Vipindas Pala United States	13	1.0k 1.6×	76 0.6×	26 0.8×	36 1.2×	65 2.2×	31	1.1k
S. Pendharkar United States	18	903 1.4×	149 1.2×	22 0.7×	18 0.6×	31 1.1×	81	933

Countries citing papers authored by C. Abbate

Since Specialization

Citations

This map shows the geographic impact of C. Abbate's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Abbate with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Abbate more than expected).

Fields of papers citing papers by C. Abbate

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Abbate. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Abbate. The network helps show where C. Abbate may publish in the future.

Co-authorship network of co-authors of C. Abbate

This figure shows the co-authorship network connecting the top 25 collaborators of C. Abbate. A scholar is included among the top collaborators of C. Abbate based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Abbate. C. Abbate is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Abbate, C., et al.. (2020). Isolated DC/AC Converter with ZVT based on Pulsating DC Link. 2. 1162–1167. 4 indexed citations

Abbate, C., et al.. (2019). Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part II. IEEE Transactions on Electron Devices. 66(10). 4243–4250. 48 indexed citations

Abbate, C., et al.. (2019). Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I. IEEE Transactions on Electron Devices. 66(10). 4235–4242. 63 indexed citations

Abbate, C., et al.. (2017). Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectronics Reliability. 76-77. 314–320. 16 indexed citations

Abbate, C., et al.. (2016). Measurement of IGBT High-Frequency Input Impedance in Short Circuit. IEEE Transactions on Power Electronics. 32(1). 584–592. 12 indexed citations

Abbate, C., et al.. (2015). Modelling and Analysis of EMI Generated of Power IGBT Modules. 3(2). 49–54.

Abbate, C., et al.. (2014). Experimental and Numerical Study of Low and High Frequency Oscillations in IGBTs during Short Circuit. 1–8. 1 indexed citations

Abbate, C., G. Busatto, P. Cova, et al.. (2014). Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectronics Reliability. 54(9-10). 2200–2206. 30 indexed citations

Iannuzzo, Francesco, C. Abbate, & G. Busatto. (2014). Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices. IEEE Industrial Electronics Magazine. 8(3). 28–39. 37 indexed citations

10.

Fischer, Horst, et al.. (2013). High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit. 46. 183–188. 9 indexed citations

11.

Abbate, C., Francesco Iannuzzo, & G. Busatto. (2013). Thermal instability during short circuit of normally-off AlGaN/GaN HFETs. Microelectronics Reliability. 53(9-11). 1481–1485. 18 indexed citations

12.

Abbate, C., G. Busatto, & Francesco Iannuzzo. (2012). Unclamped repetitive stress on 1200V normally-off SiC JFETs. Microelectronics Reliability. 52(9-10). 2420–2425. 6 indexed citations

13.

Busatto, G., C. Abbate, & Francesco Iannuzzo. (2010). Non destructive SOA testing of power modules. 1–6. 6 indexed citations

14.

Abbate, C., G. Busatto, & Francesco Iannuzzo. (2010). High-Voltage, High-Performance Switch Using Series-Connected IGBTs. IEEE Transactions on Power Electronics. 25(9). 2450–2459. 82 indexed citations

15.

Abbate, C., G. Busatto, & Francesco Iannuzzo. (2009). The effects of the stray elements on the failure of parallel connected IGBTs during Turn-Off. European Conference on Power Electronics and Applications. 1–9. 1 indexed citations

16.

Busatto, G., et al.. (2008). Non-Destructive Experimental Investigation about RBSOA in High Power IGBT Modules. 1–5. 7 indexed citations

17.

Abbate, C., et al.. (2006). Experimental - Simulative procedure to Predict the EMI Generated in High Power Converters based on IGBT modules. 1–6. 2 indexed citations

18.

Abbate, C., et al.. (2006). The high frequency behaviour of high voltage and current IGBT modules. Microelectronics Reliability. 46(9-11). 1848–1853. 3 indexed citations

19.

Busatto, G., et al.. (2005). EMI analysis in high power converters for traction application. 1. 9 pp.–P.9. 9 indexed citations

20.

Busatto, G., et al.. (2004). Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications. Microelectronics Reliability. 44(9-11). 1443–1448. 12 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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