P.L. Hower

1.5k citations

47 papers · 1.1k indexed · h-index 20

Electrical and Electronic Engineering top 5%
- Advancements in Semiconductor Devices and Circuit Design 32
- Silicon Carbide Semiconductor Technologies 27
- Semiconductor materials and devices 21
- Electrostatic Discharge in Electronics 13
- Silicon and Solar Cell Technologies 7
- Thin-Film Transistor Technologies 4
- Advanced DC-DC Converters 3
Materials Chemistry
Atomic and Molecular Physics, and Optics
- Semiconductor Quantum Structures and Devices 5
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Co-authors: T. K. Gupta V.G.K. Reddi P. Rai‐Choudhury Nina Bechtel W. G. Carlson S. Merchant S. Pendharkar Juhn‐Jong Lin
Cited by: Electrical and Electronic Engineering Materials Chemistry Atomic and Molecular Physics, and Optics
Journals: IEEE Transactions on Electron Devices (8 papers)Journal of Applied Physics (3 papers)Proceedings of the IEEE (2 papers)
Partner nations: United States Sweden Switzerland

In The Last Decade

P.L. Hower

44 papers receiving 1.0k citations

Peers

Countries citing papers authored by P.L. Hower

Since Specialization

Citations

This map shows the geographic impact of P.L. Hower's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.L. Hower with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.L. Hower more than expected).

Fields of papers citing papers by P.L. Hower

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.L. Hower. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.L. Hower. The network helps show where P.L. Hower may publish in the future.

Co-authorship network

The 25 scholars most cited alongside P.L. Hower, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P.L. Hower Line = papers co-authored together P.L. Hower links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Transmission Line Pulse Test Method for Estimating SEB Performance of $n$ -Channel Lateral DMOS Power Transistors IEEE Transactions on Nuclear Science ·Hitoshi Dohkoshi,P.L. Hower,Kevin M. Warren,R. Baumann	2017	14
2	ESD robust bipolar transistors with variable trigger and sustaining voltages S. Pendharkar,P.L. Hower,Alison M. Lanzi	2004	3
3	Current filament movement and silicon melting in an ESD-robust DENMOS transistor Electrical Overstress/Electrostatic Discharge Symposium ·R. Steinhoff,Jin-Biao Huang,P.L. Hower,J.S. Brodsky	2003	39
4	Safe operating area - a new frontier in Ldmos design P.L. Hower	2003	51
5	Safe operating area considerations in LDMOS transistors P.L. Hower,Juhn‐Jong Lin,Susan Haynie,Л.О. Величко,Robert Shaw,Ю М Заборовская	2003	21
6	Using "Adaptive resurf" to improve the SOA of LDMOS transistors P.L. Hower,Jim J. Lin,S. Merchant,Л.О. Величко	2002	17
7	Avalanche-induced thermal instability in Ldmos transistors P.L. Hower,E. E. Gorodnichev,S. Merchant,T. Efland,S. Pendharkar,R. Steinhoff,J.S. Brodsky	2002	27
8	Schottky rectifiers for low-voltage outputs P.L. Hower,Nisaa’ Halah Rosyidah	1986	2
9	Optimum design of power MOSFETs P.L. Hower,原田史朗,W. van Leeuwen	1983	20
10	Comparison of various source-gate geometries for power MOSFET's IEEE Transactions on Electron Devices ·P.L. Hower,福男米倉	1981	18
11	A model for turn-off in bipolar transistors P.L. Hower	1980	5
12	Development and fabrication of improved power transistor switches NASA STI Repository (National Aeronautics and Space Administration) ·P.L. Hower,XU Mengyao	1979	0
13	Application of a charge-control model to high-voltage power transistors IEEE Transactions on Electron Devices ·P.L. Hower	1976	23
14	Experimental demonstration of high-power fast-rise-time switching in silicon junction semiconductors Applied Physics Letters ·O. Zucker,Mária Müller,Vernon L. Smith,Anand Kumar Andiappan,P.L. Hower	1976	20
15	Comparison of one- and two-dimensional models of transistor thermal instability IEEE Transactions on Electron Devices ·P.L. Hower,Sangeetha S Sajjan	1974	31
16	Second breakdown of transistors during inductive turnoff Proceedings of the IEEE ·Matsumura Yasumitsu,P.L. Hower	1973	27
17	A new high-voltage planar transistor technology Melanie Aulia Ashfiyah,P.L. Hower	1971	1
18	Avalanche injection and second breakdown in transistors IEEE Transactions on Electron Devices ·P.L. Hower,V.G.K. Reddi	1970	178
19	A microwave GaAs field-effect transistor W.W. Hooper,P.L. Hower	1967	1
20	Charge control of field effect transistors P.L. Hower,Purnima Naraayan	1966	1

About P.L. Hower

P.L. Hower is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Automotive Engineering, having authored 47 papers that have together received 1.1k indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (32 papers), Silicon Carbide Semiconductor Technologies (27 papers), Semiconductor materials and devices (21 papers), Electrostatic Discharge in Electronics (13 papers), Silicon and Solar Cell Technologies (7 papers), Semiconductor Quantum Structures and Devices (5 papers), Thin-Film Transistor Technologies (4 papers) and Advanced DC-DC Converters (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.0k citations), Materials Chemistry (239 citations) and Atomic and Molecular Physics, and Optics (122 citations). P.L. Hower has collaborated with scholars based in United States, Sweden and Switzerland. Frequent co-authors include T. K. Gupta, V.G.K. Reddi, P. Rai‐Choudhury, Nina Bechtel, W. G. Carlson, S. Merchant, S. Pendharkar, Juhn‐Jong Lin, J.S. Brodsky and R. Steinhoff. Their work appears in journals such as IEEE Transactions on Electron Devices, Journal of Applied Physics, Proceedings of the IEEE, IEEE Electron Device Letters and Applied Physics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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