Ian D. Booker

1.1k total citations · 1 hit paper
31 papers, 815 citations indexed

About

Ian D. Booker is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Ian D. Booker has authored 31 papers receiving a total of 815 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Ian D. Booker's work include Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (20 papers) and Thin-Film Transistor Technologies (9 papers). Ian D. Booker is often cited by papers focused on Silicon Carbide Semiconductor Technologies (24 papers), Semiconductor materials and devices (20 papers) and Thin-Film Transistor Technologies (9 papers). Ian D. Booker collaborates with scholars based in Sweden, Germany and Iceland. Ian D. Booker's co-authors include Erik Janzén, Nguyên Tiên Són, Jörg Wrachtrup, Torsten Rendler, Sang‐Yun Lee, Ádám Gali, Takeshi Ohshima, Matthias Widmann, Nan Zhao and Andrej Denisenko and has published in prestigious journals such as Nature Materials, Nano Letters and Journal of Applied Physics.

In The Last Decade

Ian D. Booker

31 papers receiving 797 citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Coherent control of single spins in silicon carbide at room temperature

2014 474 citations Matthias Widmann, Sang‐Yun Lee et al. Nature Materials profile →

Peers

Ian D. Booker

EEE

AMPO

EOMM

Jeong Hee Han South Korea

A. Blondel Switzerland

S. Guilet France

Tsutomu Ogawa Japan

Thomas Metcalf United States

E. A. Vinogradov Russia

Sadanand V. Deshpande United States

A. V. Chernykh Russia

M.F. da Silva Portugal

Justin Mallek United States

Jeong Hee Han South Korea

Ian D. Booker

701 ×1.4

EEE

299 ×0.6

76 ×0.3

AMPO

111 ×1.3

EOMM

49 ×0.8

Citations per year, relative to Ian D. Booker Ian D. Booker (= 1×) peers Jeong Hee Han

Countries citing papers authored by Ian D. Booker

Since Specialization

Citations

This map shows the geographic impact of Ian D. Booker's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Ian D. Booker with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Ian D. Booker more than expected).

Fields of papers citing papers by Ian D. Booker

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Ian D. Booker. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Ian D. Booker. The network helps show where Ian D. Booker may publish in the future.

Co-authorship network of co-authors of Ian D. Booker

This figure shows the co-authorship network connecting the top 25 collaborators of Ian D. Booker. A scholar is included among the top collaborators of Ian D. Booker based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Ian D. Booker. Ian D. Booker is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sampayan, S., Paulius Grivickas, Adam Conway, et al.. (2021). Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties. Scientific Reports. 11(1). 6859–6859. 12 indexed citations

Widmann, Matthias, Matthias Niethammer, Dmitry Yu. Fedyanin, et al.. (2019). Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device. Nano Letters. 19(10). 7173–7180. 64 indexed citations

Booker, Ian D., et al.. (2017). Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers. Materials science forum. 897. 238–241. 1 indexed citations

Sun, Jianwu, Valdas Jokubavičius, Lu Gao, et al.. (2016). Solar Driven Energy Conversion Applications Based on 3C-SiC. Materials science forum. 858. 1028–1031. 10 indexed citations

Karhu, Robin, Ian D. Booker, Jawad Ul‐Hassan, Ivan G. Ivanov, & Erik Janzén. (2015). The Role of Chlorine during High Growth Rate Epitaxy. Materials science forum. 821-823. 141–144. 4 indexed citations

Widmann, Matthias, Sang‐Yun Lee, Torsten Rendler, et al.. (2014). Coherent control of single spins in silicon carbide at room temperature. Nature Materials. 14(2). 164–168. 474 indexed citations breakdown →

Rommel, Mathias, et al.. (2014). Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD. Materials science forum. 778-780. 301–304. 2 indexed citations

Booker, Ian D., Hassan Abdalla, Jawad Ul‐Hassan, et al.. (2014). Oxidation Induced ON<sub>1</sub>, ON<sub>2a/b</sub> Defects in 4H-SiC Characterized by DLTS. Materials science forum. 778-780. 281–284. 2 indexed citations

Booker, Ian D., et al.. (2013). The influence of growth conditions on carrier lifetime in 4H–SiC epilayers. Journal of Crystal Growth. 381. 43–50. 10 indexed citations

10.

Booker, Ian D., et al.. (2013). Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers. Materials science forum. 740-742. 251–254. 1 indexed citations

11.

Ul‐Hassan, Jawad, et al.. (2013). Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers. Materials science forum. 740-742. 637–640. 5 indexed citations

12.

Stenberg, P., Ian D. Booker, Ivan G. Ivanov, et al.. (2013). Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD. Journal of Crystal Growth. 380. 55–60. 18 indexed citations

13.

Mahmood, Shamail, et al.. (2012). Effect of Topiramate on Weight Gain in Patients Receiving Atypical Antipsychotic Agents. Journal of Clinical Psychopharmacology. 33(1). 90–94. 26 indexed citations

14.

Bergman, Peder, et al.. (2012). Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation. Materials science forum. 717-720. 289–292. 3 indexed citations

15.

Ul‐Hassan, Jawad, et al.. (2012). The Effect of Growth Conditions on Carrier Lifetime in N-Type 4H-SiC Epitaxial Layers. Materials science forum. 717-720. 161–164. 6 indexed citations

16.

Fagerlind, Martin, Ian D. Booker, Peder Bergman, et al.. (2012). Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs. IEEE Transactions on Device and Materials Reliability. 12(3). 538–546. 5 indexed citations

17.

Booker, Ian D., Jawad Ul‐Hassan, Anders Hallén, et al.. (2012). Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers. Materials science forum. 717-720. 285–288. 1 indexed citations

18.

Ul‐Hassan, Jawad, et al.. (2012). Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC. Materials science forum. 717-720. 157–160. 3 indexed citations

19.

Ketteniss, N., H. Behmenburg, J. Woitok, et al.. (2010). Quaternary nitride heterostructure field effect transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2001–2003. 12 indexed citations

20.

Moss, Brian, et al.. (1984). The River Bure, United Kingdom: Patterns of change in chemistry and phytoplankton in a slow-flowing fertile river. SIL Proceedings 1922-2010. 22(3). 1959–1964. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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