David Eon

1.6k total citations
65 papers, 1.2k citations indexed

About

David Eon is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Mechanics of Materials. According to data from OpenAlex, David Eon has authored 65 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 52 papers in Materials Chemistry, 46 papers in Electrical and Electronic Engineering and 25 papers in Mechanics of Materials. Recurrent topics in David Eon's work include Diamond and Carbon-based Materials Research (48 papers), Semiconductor materials and devices (35 papers) and Metal and Thin Film Mechanics (24 papers). David Eon is often cited by papers focused on Diamond and Carbon-based Materials Research (48 papers), Semiconductor materials and devices (35 papers) and Metal and Thin Film Mechanics (24 papers). David Eon collaborates with scholars based in France, Spain and Japan. David Eon's co-authors include E. Gheeraert, Julien Pernot, Nicolas Rouger, Pierre Muret, D. Araújo, Aboulaye Traoré, Gauthier Chicot, Alexandre Fiori, Christophe Cardinaud and E. Bustarret and has published in prestigious journals such as SHILAP Revista de lepidopterología, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

David Eon

65 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
David Eon France 22 948 768 347 190 170 65 1.2k
P. K. Baumann Germany 19 1.3k 1.4× 1.0k 1.3× 227 0.7× 285 1.5× 228 1.3× 67 1.6k
J.E. Bourée France 17 720 0.8× 616 0.8× 198 0.6× 142 0.7× 166 1.0× 89 1.1k
B. Rafferty United Kingdom 11 667 0.7× 443 0.6× 263 0.8× 110 0.6× 111 0.7× 16 963
M. Shamsa United States 9 932 1.0× 428 0.6× 141 0.4× 142 0.7× 85 0.5× 10 1.1k
Somnath Bhattacharyya South Africa 20 1.4k 1.5× 763 1.0× 590 1.7× 210 1.1× 328 1.9× 86 1.7k
T. D. Corrigan United States 16 905 1.0× 379 0.5× 280 0.8× 315 1.7× 308 1.8× 25 1.3k
D. Chvostová Czechia 18 646 0.7× 375 0.5× 204 0.6× 200 1.1× 171 1.0× 84 964
M. Vinnichenko Germany 20 838 0.9× 567 0.7× 175 0.5× 109 0.6× 70 0.4× 55 1.1k
Kungen Teii Japan 20 1.0k 1.1× 481 0.6× 503 1.4× 101 0.5× 125 0.7× 91 1.2k
V.P. Godbole India 18 801 0.8× 386 0.5× 397 1.1× 223 1.2× 135 0.8× 41 1.1k

Countries citing papers authored by David Eon

Since Specialization
Citations

This map shows the geographic impact of David Eon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by David Eon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites David Eon more than expected).

Fields of papers citing papers by David Eon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by David Eon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by David Eon. The network helps show where David Eon may publish in the future.

Co-authorship network of co-authors of David Eon

This figure shows the co-authorship network connecting the top 25 collaborators of David Eon. A scholar is included among the top collaborators of David Eon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with David Eon. David Eon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Eon, David. (2024). Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics. physica status solidi (a). 221(8). 1 indexed citations
2.
Charlo, José Carlos Piñero, et al.. (2024). Spectral and microstructural analysis of the effect of the Ga+ implantation on diamond: a CL-EELS study. Nanotechnology. 35(41). 415701–415701. 1 indexed citations
3.
Eon, David, et al.. (2023). Barrier height requirements for leakage suppression in diamond power Schottky diodes. Diamond and Related Materials. 136. 110038–110038. 4 indexed citations
4.
Eon, David, et al.. (2023). General optimization of breakdown voltage and resistivity on power components in terms of doping level and thickness. Diamond and Related Materials. 136. 110032–110032. 3 indexed citations
5.
Eon, David. (2022). Self-heating in a diamond Schottky diode influenced by U-shaped resistivity. Diamond and Related Materials. 130. 109414–109414. 3 indexed citations
6.
Udrea, Florin, et al.. (2021). Normally-OFF Diamond Reverse Blocking MESFET. IEEE Transactions on Electron Devices. 68(12). 6279–6285. 7 indexed citations
7.
Donato, Nazareno, Richard B. Jackman, Philippe Godignon, et al.. (2018). Gate Oxide Electrical Stability of p-type Diamond MOS Capacitors. IEEE Transactions on Electron Devices. 65(8). 3361–3364. 13 indexed citations
8.
Gutiérrez, M., Nicolas Rouger, David Eon, et al.. (2018). High quality Al2O3/(100) oxygen-terminated diamond interface for MOSFETs fabrication. Applied Physics Letters. 112(10). 20 indexed citations
9.
Charlo, José Carlos Piñero, M. Gutiérrez, Fernando Lloret, et al.. (2018). Impact of Nonhomoepitaxial Defects in Depleted Diamond MOS Capacitors. IEEE Transactions on Electron Devices. 65(5). 1830–1837. 6 indexed citations
10.
Muret, Pierre, et al.. (2017). Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance. Journal of Applied Physics. 123(16). 37 indexed citations
11.
Rouger, Nicolas, Gauthier Chicot, Florin Udrea, et al.. (2017). Deep depletion concept for diamond MOSFET. Applied Physics Letters. 111(17). 48 indexed citations
12.
Morse, J., Damien Caliste, David Eon, et al.. (2017). Synchrotron Bragg diffraction imaging characterization of synthetic diamond crystals for optical and electronic power device applications. Journal of Applied Crystallography. 50(2). 561–569. 32 indexed citations
13.
Pernot, Julien, et al.. (2017). Deep-Depletion Mode Boron-Doped Monocrystalline Diamond Metal Oxide Semiconductor Field Effect Transistor. IEEE Electron Device Letters. 38(11). 1571–1574. 54 indexed citations
14.
Muret, Pierre, et al.. (2015). Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures. physica status solidi (a). 212(11). 2501–2506. 5 indexed citations
15.
Vallée, C., et al.. (2015). Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor. Applied Physics Letters. 107(14). 33 indexed citations
16.
Muret, Pierre, Aboulaye Traoré, David Eon, et al.. (2015). Potential barrier heights at metal on oxygen-terminated diamond interfaces. Journal of Applied Physics. 118(20). 20 indexed citations
17.
Pinault-Thaury, M.A., Ingrid Stenger, François Jomard, et al.. (2015). Electrical activity of (100) n‐type diamond with full donor site incorporation of phosphorus. physica status solidi (a). 212(11). 2454–2459. 15 indexed citations
18.
Hébert, Clément, et al.. (2012). Formation of oriented nanostructures in diamond using metallic nanoparticles. Nanotechnology. 23(45). 455302–455302. 31 indexed citations
19.
Pernot, Julien, Alexandre Fiori, Aboulaye Traoré, et al.. (2012). RECENT PROGRESS OF DIAMOND DEVICE TOWARD POWER APPLICATION. HAL (Le Centre pour la Communication Scientifique Directe). 2 indexed citations
20.
Raballand, V., Gilles Cartry, David Eon, & Christophe Cardinaud. (2004). Instabilities in Inductively Coupled Oxygen Plasma. APS. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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