V. Banu

691 total citations
55 papers, 536 citations indexed

About

V. Banu is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, V. Banu has authored 55 papers receiving a total of 536 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 14 papers in Atomic and Molecular Physics, and Optics and 6 papers in Mechanical Engineering. Recurrent topics in V. Banu's work include Silicon Carbide Semiconductor Technologies (48 papers), Electromagnetic Compatibility and Noise Suppression (19 papers) and Semiconductor materials and devices (12 papers). V. Banu is often cited by papers focused on Silicon Carbide Semiconductor Technologies (48 papers), Electromagnetic Compatibility and Noise Suppression (19 papers) and Semiconductor materials and devices (12 papers). V. Banu collaborates with scholars based in Spain, Romania and France. V. Banu's co-authors include Philippe Godignon, X. Jordà, M. Vellvehı́, José del R. Millán, J. Montserrat, X. Perpiñà, Pierre Brosselard, Luis A. Navarro, Mihaela Alexandru and Dominique Tournier and has published in prestigious journals such as IEEE Transactions on Industrial Electronics, IEEE Transactions on Power Electronics and Journal of Physics D Applied Physics.

In The Last Decade

V. Banu

51 papers receiving 519 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
V. Banu Spain	12	509	110	93	41	41	55	536
Chengzhan Li China	12	399 0.8×	60 0.5×	78 0.8×	72 1.8×	38 0.9×	71	490
Lorenzo Ceccarelli Denmark	14	448 0.9×	94 0.9×	67 0.7×	31 0.8×	88 2.1×	27	574
Leonid Fursin United States	16	701 1.4×	125 1.1×	31 0.3×	40 1.0×	52 1.3×	58	736
Reza Ghandi Sweden	18	950 1.9×	163 1.5×	71 0.8×	83 2.0×	106 2.6×	75	1.0k
Tsutomu Yatsuo Japan	15	702 1.4×	111 1.0×	43 0.5×	85 2.1×	27 0.7×	77	715
Marina Antoniou United Kingdom	16	780 1.5×	74 0.7×	33 0.4×	42 1.0×	41 1.0×	95	802
Noriyuki Iwamuro Japan	19	1.2k 2.3×	123 1.1×	99 1.1×	54 1.3×	72 1.8×	85	1.2k
Muhammad Nawaz Sweden	17	912 1.8×	120 1.1×	39 0.4×	48 1.2×	50 1.2×	93	972
Kimimori Hamada Japan	18	931 1.8×	81 0.7×	101 1.1×	62 1.5×	49 1.2×	46	965
Ryszard Kisiel Poland	11	404 0.8×	40 0.4×	221 2.4×	32 0.8×	42 1.0×	67	456

Countries citing papers authored by V. Banu

Since Specialization

Citations

This map shows the geographic impact of V. Banu's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Banu with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Banu more than expected).

Fields of papers citing papers by V. Banu

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Banu. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Banu. The network helps show where V. Banu may publish in the future.

Co-authorship network of co-authors of V. Banu

This figure shows the co-authorship network connecting the top 25 collaborators of V. Banu. A scholar is included among the top collaborators of V. Banu based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Banu. V. Banu is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Soler, Victor, V. Banu, X. Jordà, et al.. (2020). Reliability and Robustness Tests for Next-Generation High-Voltage SiC MOSFETs. IEEE Journal of Emerging and Selected Topics in Power Electronics. 9(4). 4320–4329. 9 indexed citations

Soler, Victor, V. Banu, J. Montserrat, et al.. (2019). Dynamic Characterization and Robustness Test of High Voltage SiC MOSFETs. Materials science forum. 963. 768–772. 2 indexed citations

Banu, V., Maxime Berthou, J. Montserrat, X. Jordà, & Philippe Godignon. (2017). Impact of layout on the surge current robustness of 1.2 KV SiC diodes. 5 indexed citations

Banu, V., Pierre Brosselard, X. Jordà, & Philippe Godignon. (2016). Power cycling and surge current tester for SiC power devices. 5 indexed citations

Banu, V., Maxime Berthou, J. Montserrat, et al.. (2016). Studies on Floating Contact Press-Pack Diodes Surge Current Capability. Materials science forum. 858. 1053–1056. 1 indexed citations

Godignon, Philippe, V. Banu, J. Montserrat, et al.. (2014). SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments. ESASP. 719. 9.

Alexandru, Mihaela, et al.. (2014). High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates. Materials science forum. 778-780. 1130–1134. 1 indexed citations

Banu, V., et al.. (2013). Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts. Materials science forum. 740-742. 873–876. 3 indexed citations

Banu, V., et al.. (2013). 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology. Materials science forum. 740-742. 1048–1051. 7 indexed citations

10.

Banu, V., et al.. (2012). Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs. Materials science forum. 711. 104–108. 9 indexed citations

11.

Banu, V., et al.. (2011). Comparison between mesa isolation and p+ implantation isolation for 4H-SiC MESFET transistors. 317–320. 7 indexed citations

12.

Godignon, Philippe, X. Jordà, V. Banu, et al.. (2010). Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range. 351–354. 6 indexed citations

13.

Alexandru, Mihaela, V. Banu, M. Vellvehı́, Philippe Godignon, & José del R. Millán. (2010). Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET. 413–416. 10 indexed citations

14.

Banu, V., Philippe Godignon, X. Jordà, et al.. (2010). High temperature SiC Schottky diodes with stable operation for space application. 397–400. 4 indexed citations

15.

Banu, V., Pierre Brosselard, X. Jordà, Philippe Godignon, & José del R. Millán. (2010). Demonstration of High Temperature Bandgap Voltage Reference Feasibility on SiC Material. Materials science forum. 645-648. 1131–1134. 3 indexed citations

16.

Millán, José del R., V. Banu, Pierre Brosselard, et al.. (2008). Electrical performance at high temperature and surge current of 1.2 kV power rectifiers: Comparison between Si PiN, 4H-SiC Schottky and JBS diodes. 53–59. 9 indexed citations

17.

Bădilă, M., et al.. (2003). A preliminary study on VDMOS and IGBT encapsulation, reliability and lifetime killing. 1. 55–58. 2 indexed citations

18.

Bădilă, M., José del R. Millán, Gheorghe Brezeanu, et al.. (2002). Electron irradiation effects on static >100< and >111< power MOS-gated devices. 1. 251–254. 1 indexed citations

19.

Bădilă, M., Gheorghe Brezeanu, José del R. Millán, et al.. (2000). Lift-off technology for SiC UV detectors. Diamond and Related Materials. 9(3-6). 994–997. 10 indexed citations

20.

Brezeanu, Gheorghe, M. Bădilă, José del R. Millán, et al.. (2000). 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage. Materials science forum. 338-342. 1219–1222. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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