M. Vellvehı́

2.0k citations
142 papers · 1.5k indexed · h-index 19
Topics
Silicon Carbide Semiconductor Technologies (87 papers)Advancements in Semiconductor Devices and Circuit Design (32 papers)Semiconductor materials and devices (24 papers)
Partner nations
SpainFranceNetherlands

In The Last Decade

M. Vellvehı́

138 papers receiving 1.5k citations

Peers

M. Vellvehı́
Comparison fields: 5 of 77
  • Electrical and Electronic Engineering 1.3k
  • Materials Chemistry 251
  • Condensed Matter Physics 225
  • Mechanical Engineering 213
  • Atomic and Molecular Physics, and Optics 209
Replace X. Jordà with:
X. Jordà Spain
Glenn M. Beheim United States
Tsuyoshi Takahashi Japan
J. Nicolics Austria
Michele Riccio Italy
J. R. Thompson United States
K. Sawa Japan
Jérôme Delamare France
Mauro Ciappa Switzerland
Stéphane Holé France
M. Vellvehı́ relative to X. Jordà Spain X. Jordà's profile →
Citations per field
00.5×1.5×
X. Jordà · 1×
Citations per year

Countries citing papers authored by M. Vellvehı́

Since Specialization
Citations

This map shows the geographic impact of M. Vellvehı́'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Vellvehı́ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Vellvehı́ more than expected).

Fields of papers citing papers by M. Vellvehı́

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Vellvehı́. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Vellvehı́. The network helps show where M. Vellvehı́ may publish in the future.

Co-authorship network of co-authors of M. Vellvehı́

This figure shows the co-authorship network connecting the top 25 collaborators of M. Vellvehı́. A scholar is included among the top collaborators of M. Vellvehı́ based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Vellvehı́. M. Vellvehı́ is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
#WorkIndexed citations
1 0
2 2
3 3
4 6
5 15
6 18
7 6
8 10
9
Analysis of Natural Convection Cooling Solutions for GaN HEMT Transistors
5
10 31
11 11
12
SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments
0
13 17
14
Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range
6
15 7
16 10
17
Trench isolation technique for reverse blocking IGBT using Boron nitride doping wafers
3
18 15
19 3
20
Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation
1

About M. Vellvehı́

M. Vellvehı́ is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics, having authored 142 papers that have together received 1.5k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (87 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Semiconductor materials and devices (24 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.3k citations), Condensed Matter Physics (225 citations) and Atomic and Molecular Physics, and Optics (209 citations). M. Vellvehı́ has collaborated with scholars based in Spain, France and Netherlands. Frequent co-authors include X. Jordà, X. Perpiñà, Philippe Godignon, José del R. Millán, V. Banu, J. Rebollo, N. Mestres, Josep Altet, J. Montserrat and D. Flores. Their work appears in journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Industrial Electronics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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