M. Vellvehı́

2.0k total citations
142 papers, 1.5k citations indexed

About

M. Vellvehı́ is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, M. Vellvehı́ has authored 142 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 131 papers in Electrical and Electronic Engineering, 23 papers in Atomic and Molecular Physics, and Optics and 19 papers in Mechanical Engineering. Recurrent topics in M. Vellvehı́'s work include Silicon Carbide Semiconductor Technologies (87 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Semiconductor materials and devices (24 papers). M. Vellvehı́ is often cited by papers focused on Silicon Carbide Semiconductor Technologies (87 papers), Advancements in Semiconductor Devices and Circuit Design (32 papers) and Semiconductor materials and devices (24 papers). M. Vellvehı́ collaborates with scholars based in Spain, France and Netherlands. M. Vellvehı́'s co-authors include X. Jordà, X. Perpiñà, Philippe Godignon, José del R. Millán, V. Banu, J. Rebollo, N. Mestres, Josep Altet, J. Montserrat and D. Flores and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Industrial Electronics.

In The Last Decade

M. Vellvehı́

138 papers receiving 1.5k citations

Peers

M. Vellvehı́

EEE

CMP

AMPO

X. Jordà Spain

Tsuyoshi Takahashi Japan

Glenn M. Beheim United States

J. Nicolics Austria

Yasunobu Yokomizu Japan

J. R. Thompson United States

Michele Riccio Italy

Jérôme Delamare France

Yunfei En China

Tien‐Kan Chung Taiwan

X. Jordà Spain

M. Vellvehı́

1.6k ×1.2

EEE

258 ×1.0

287 ×1.3

CMP

300 ×1.4

235 ×1.1

AMPO

Citations per year, relative to M. Vellvehı́ M. Vellvehı́ (= 1×) peers X. Jordà

Countries citing papers authored by M. Vellvehı́

Since Specialization

Citations

This map shows the geographic impact of M. Vellvehı́'s research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Vellvehı́ with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Vellvehı́ more than expected).

Fields of papers citing papers by M. Vellvehı́

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Vellvehı́. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Vellvehı́. The network helps show where M. Vellvehı́ may publish in the future.

Co-authorship network of co-authors of M. Vellvehı́

This figure shows the co-authorship network connecting the top 25 collaborators of M. Vellvehı́. A scholar is included among the top collaborators of M. Vellvehı́ based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Vellvehı́. M. Vellvehı́ is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Sartel, Corinne, Vincent Sallet, Bruno Bérini, et al.. (2025). p‐Type β‐Ga₂O₃ Homoepitaxial Films with Superior Electrical Transport Properties. Advanced Electronic Materials. 11(16).

Vellvehı́, M., et al.. (2023). Die-Level Transient Thermal Imaging Based on Fourier Series Reconstruction for Power Industrial Electronics. IEEE Transactions on Instrumentation and Measurement. 72. 1–11. 2 indexed citations

Vellvehı́, M., et al.. (2022). Carrier Concentration Analysis in 1.2 kV SiC Schottky Diodes Under Current Crowding. IEEE Electron Device Letters. 43(6). 938–941. 3 indexed citations

Vellvehı́, M., et al.. (2020). Local Thermal Resistance Extraction in Monolithic Microwave Integrated Circuits. IEEE Transactions on Industrial Electronics. 68(12). 12840–12849. 6 indexed citations

Perpiñà, X., et al.. (2019). Power Losses and Current Distribution Studies by Infrared Thermal Imaging in Soft- and Hard-Switched IGBTs Under Resonant Load. IEEE Transactions on Power Electronics. 35(5). 5221–5237. 15 indexed citations

Perpiñà, X., et al.. (2018). Solid-State Relay Solutions for Induction Cooking Applications Based on Advanced Power Semiconductor Devices. IEEE Transactions on Industrial Electronics. 66(3). 1832–1841. 18 indexed citations

Perpiñà, X., et al.. (2018). Thermal Management Strategies for Low- and High-Voltage Retrofit LED Lamp Drivers. IEEE Transactions on Power Electronics. 34(4). 3677–3688. 6 indexed citations

Perpiñà, X., et al.. (2018). Output Power and Gain Monitoring in RF CMOS Class A Power Amplifiers by Thermal Imaging. IEEE Transactions on Instrumentation and Measurement. 68(8). 2861–2870. 10 indexed citations

Jordà, X., et al.. (2018). Analysis of Natural Convection Cooling Solutions for GaN HEMT Transistors. European Conference on Power Electronics and Applications. 5 indexed citations

10.

Rodríguez‐Rodríguez, Rosalía, Macarena Pozo, María Calderón‐Domínguez, et al.. (2018). CPT1C in the ventromedial nucleus of the hypothalamus is necessary for brown fat thermogenesis activation in obesity. Molecular Metabolism. 19. 75–85. 31 indexed citations

11.

Perpiñà, X., M. Vellvehı́, X. Jordà, et al.. (2017). Short-circuit capability in p-GaN HEMTs and GaN MISHEMTs. 455–458. 11 indexed citations

12.

Godignon, Philippe, V. Banu, J. Montserrat, et al.. (2014). SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments. ESASP. 719. 9.

13.

Jordà, X., X. Perpiñà, M. Vellvehı́, et al.. (2011). Low-cost and versatile thermal test chip for power assemblies assessment and thermometric calibration purposes. Applied Thermal Engineering. 31(10). 1664–1672. 17 indexed citations

14.

Godignon, Philippe, X. Jordà, V. Banu, et al.. (2010). Long term stability of packaged SiC Schottky diodes in the -170°C/+280°C temperature range. 351–354. 6 indexed citations

15.

Perpiñà, X., Josep Altet, X. Jordà, M. Vellvehı́, & N. Mestres. (2010). Location of hot spots in integrated circuits by monitoring the substrate thermal-phase lag with the mirage effect. Optics Letters. 35(15). 2657–2657. 7 indexed citations

16.

Alexandru, Mihaela, V. Banu, M. Vellvehı́, Philippe Godignon, & José del R. Millán. (2010). Design of logic gates for high temperature and harsh radiation environment made of 4H-SiC MESFET. 413–416. 10 indexed citations

17.

Vellvehı́, M., et al.. (2009). Trench isolation technique for reverse blocking IGBT using Boron nitride doping wafers. European Conference on Power Electronics and Applications. 1–5. 3 indexed citations

18.

Pérez‐Tomás, Amador, Philippe Godignon, M. Vellvehı́, & Pierre Brosselard. (2009). Silicon Carbide and Related Materials 2008. Trans Tech Publications Ltd. eBooks. 15 indexed citations

19.

Tournier, Dominique, et al.. (2006). Current Sensing for SiC Power Devices. Materials science forum. 527-529. 1215–1218. 3 indexed citations

20.

Godignon, Philippe, E. Morvan, J. Montserrat, et al.. (1996). Simulation and Experimental Results of Al Doping by Ion Beam Mixing Technique for Deep Low Doped Junction Formation. European Solid-State Device Research Conference. 267–270. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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