G. Pant

510 total citations
17 papers, 428 citations indexed

About

G. Pant is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Pant has authored 17 papers receiving a total of 428 indexed citations (citations by other indexed papers that have themselves been cited), including 17 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 2 papers in Materials Chemistry. Recurrent topics in G. Pant's work include Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (8 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). G. Pant is often cited by papers focused on Semiconductor materials and devices (16 papers), Ferroelectric and Negative Capacitance Devices (8 papers) and Advancements in Semiconductor Devices and Circuit Design (7 papers). G. Pant collaborates with scholars based in United States, Canada and Germany. G. Pant's co-authors include Bruce E. Gnade, Robert M. Wallace, Manuel Quevedo-López, P. D. Kirsch, Huiping Jia, Sitaraman Krishnan, Srinivas Gowrisanker, Prakaipetch Punchaipetch, M. J. Kim and S. Govindarajan and has published in prestigious journals such as Applied Physics Letters, Thin Solid Films and Applied Physics A.

In The Last Decade

G. Pant

17 papers receiving 410 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Pant United States 14 417 135 43 39 39 17 428
B. J. Sapjeta Germany 5 359 0.9× 198 1.5× 55 1.3× 64 1.6× 35 0.9× 5 383
M. Koike Japan 13 369 0.9× 140 1.0× 90 2.1× 17 0.4× 71 1.8× 34 429
R. Winter Israel 12 319 0.8× 151 1.1× 77 1.8× 46 1.2× 34 0.9× 21 370
Tomoyuki Kawashima Japan 10 229 0.5× 194 1.4× 44 1.0× 31 0.8× 44 1.1× 39 298
D. Hrunski Germany 9 337 0.8× 262 1.9× 28 0.7× 16 0.4× 24 0.6× 14 369
N. Lakshminarayan South Korea 10 315 0.8× 248 1.8× 66 1.5× 34 0.9× 42 1.1× 16 368
T. Boƫilă Romania 12 311 0.7× 323 2.4× 76 1.8× 22 0.6× 44 1.1× 37 405
Hyeon-Seag Kim United States 4 420 1.0× 211 1.6× 97 2.3× 13 0.3× 17 0.4× 6 460
B. Kniknie Netherlands 11 420 1.0× 405 3.0× 53 1.2× 23 0.6× 22 0.6× 21 472
Hossein Movla Iran 10 272 0.7× 216 1.6× 104 2.4× 48 1.2× 49 1.3× 26 365

Countries citing papers authored by G. Pant

Since Specialization
Citations

This map shows the geographic impact of G. Pant's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Pant with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Pant more than expected).

Fields of papers citing papers by G. Pant

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Pant. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Pant. The network helps show where G. Pant may publish in the future.

Co-authorship network of co-authors of G. Pant

This figure shows the co-authorship network connecting the top 25 collaborators of G. Pant. A scholar is included among the top collaborators of G. Pant based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Pant. G. Pant is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Böscke, T. S., S. Govindarajan, P. D. Kirsch, et al.. (2007). Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors. Applied Physics Letters. 91(7). 61 indexed citations
2.
Jia, Huiping, Srinivas Gowrisanker, G. Pant, Robert M. Wallace, & Bruce E. Gnade. (2006). Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 24(4). 1228–1232. 61 indexed citations
3.
Pant, G., M. J. Kim, Robert M. Wallace, et al.. (2006). Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics. Applied Physics Letters. 89(3). 31 indexed citations
4.
Pant, G., M. J. Kim, Robert M. Wallace, et al.. (2006). Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics. Applied Physics Letters. 88(3). 37 indexed citations
5.
Kirsch, P. D., Manuel Quevedo-López, Sitaraman Krishnan, et al.. (2006). Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability. 1–4. 14 indexed citations
6.
Böscke, T. S., S. Govindarajan, J. Heitmann, et al.. (2006). Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM. 1–4. 18 indexed citations
7.
Kirsch, P. D., G. Pant, S. Krishnan, et al.. (2006). Relationship of HfO2 Material Properties and Transistor Performance. 84. 1–2. 3 indexed citations
8.
Kirsch, P. D., Manuel Quevedo-López, Sitaraman Krishnan, et al.. (2006). Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics. Applied Physics Letters. 89(24). 18 indexed citations
9.
Jia, Huiping, et al.. (2005). Gate induced leakage and drain current offset in organic thin film transistors. Organic Electronics. 7(1). 16–21. 47 indexed citations
10.
Quevedo-López, Manuel, Bruce E. Gnade, Robert M. Wallace, et al.. (2005). High performance gate first HfSiON dielectric satisfying 45nm node requirements. 657. 4 pp.–428. 25 indexed citations
11.
Quevedo-López, Manuel, Sitaraman Krishnan, P. D. Kirsch, et al.. (2005). Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability. Applied Physics Letters. 87(26). 32 indexed citations
12.
Pant, G., Prakaipetch Punchaipetch, M.J. Kim, Robert M. Wallace, & Bruce E. Gnade. (2004). Low temperature UV/ozone oxidation formation of HfSiON gate dielectric. Thin Solid Films. 460(1-2). 242–246. 21 indexed citations
13.
Driemeier, Carlos, K. P. Bastos, G. V. Soares, et al.. (2004). Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics. Applied Physics A. 80(5). 1045–1047. 2 indexed citations
14.
Pezzi, R. P., L. Miotti, K. P. Bastos, et al.. (2004). Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon. Applied Physics Letters. 85(16). 3540–3542. 14 indexed citations
15.
Punchaipetch, Prakaipetch, et al.. (2004). Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(2). 395–400. 6 indexed citations
16.
Punchaipetch, Prakaipetch, G. Pant, Manuel Quevedo-López, et al.. (2004). Low-Temperature Deposition of Hafnium Silicate Gate Dielectrics. IEEE Journal of Selected Topics in Quantum Electronics. 10(1). 89–100. 13 indexed citations
17.
Punchaipetch, Prakaipetch, G. Pant, Manuel Quevedo-López, et al.. (2003). Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide. Thin Solid Films. 425(1-2). 68–71. 25 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by B. J. Sapjeta Breakdown of academic impact, for papers by M. Koike Breakdown of academic impact, for papers by R. Winter Breakdown of academic impact, for papers by Tomoyuki Kawashima Breakdown of academic impact, for papers by D. Hrunski Breakdown of academic impact, for papers by N. Lakshminarayan Breakdown of academic impact, for papers by T. Boƫilă Breakdown of academic impact, for papers by Hyeon-Seag Kim Breakdown of academic impact, for papers by B. Kniknie Breakdown of academic impact, for papers by Hossein Movla
Rankless by CCL
2026