Hyo Kyeom Kim

664 citations

21 papers · 580 indexed · h-index 13

Co-authors: Cheol Seong Hwang Sang‐Young Lee Woongkyu Lee Yu Jin Kim Han‐Joon Kim Min Hyuk Park Tae Joo Park Deok‐Yong Cho
Topics: Semiconductor materials and devices (21 papers)Ferroelectric and Negative Capacitance Devices (15 papers)Advancements in Semiconductor Devices and Circuit Design (8 papers)
Cited by: Electrical and Electronic Engineering Materials Chemistry Electronic, Optical and Magnetic Materials
Journals: Applied Physics Letters Journal of Applied Physics Chemistry of Materials
Partner nations: South Korea Germany

In The Last Decade

Hyo Kyeom Kim

20 papers receiving 569 citations

Peers

Countries citing papers authored by Hyo Kyeom Kim

Since Specialization

Citations

This map shows the geographic impact of Hyo Kyeom Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hyo Kyeom Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hyo Kyeom Kim more than expected).

Fields of papers citing papers by Hyo Kyeom Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hyo Kyeom Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hyo Kyeom Kim. The network helps show where Hyo Kyeom Kim may publish in the future.

Co-authorship network of co-authors of Hyo Kyeom Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Hyo Kyeom Kim. A scholar is included among the top collaborators of Hyo Kyeom Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hyo Kyeom Kim. Hyo Kyeom Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Effects of O₃ and H₂O as oxygen sources on the atomic layer deposition of HfO₂ gate dielectrics at different deposition temperatures 2014 ·Journal of Materials Chemistry C ·Sang‐Young Lee,Hyo Kyeom Kim,Jong-Ho Lee,(unknown),Jae‐Ho Lee,Cheol Seong Hwang	44
2	Controlling Work Function and Damaging Effects of Sputtered RuO₂ Gate Electrodes by Changing Oxygen Gas Ratio during Sputtering 2013 ·ACS Applied Materials & Interfaces ·Hyo Kyeom Kim,(unknown),Jae Ho Lee,Tae Joo Park,Cheol Seong Hwang	17
3	The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$ 2013 ·IEEE Transactions on Electron Devices ·(unknown),Un Ki Kim,(unknown),Hyo Kyeom Kim,(unknown),(unknown),Yoon Jang Chung,Mi-Jung Lee,Jung‐Hae Choi,Cheol Seong Hwang	27
4	Interfacial Dead-Layer Effects in Hf-Silicate Films with Pt or RuO₂ Gates 2013 ·ACS Applied Materials & Interfaces ·Hyo Kyeom Kim,(unknown),Jae Ho Lee,Cheol Seong Hwang	5
5	Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes 2013 ·Applied Physics Letters ·Min Hyuk Park,Han‐Joon Kim,Yu Jin Kim,Woongkyu Lee,Hyo Kyeom Kim,Cheol Seong Hwang	159
6	Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers 2012 ·IEEE Transactions on Electron Devices ·(unknown),(unknown),Hyo Kyeom Kim,Sang‐Young Lee,Joohwi Lee,(unknown),Yoon Jang Chung,Nae-In Lee,Tae Joo Park,Jung‐Hae Choi,Cheol Seong Hwang	11
7	Stabilization of Tetragonal HfO₂ under Low Active Oxygen Source Environment in Atomic Layer Deposition 2012 ·Chemistry of Materials ·Deok‐Yong Cho,(unknown),(unknown),Jung Ho Yoon,Hyo Kyeom Kim,Sang‐Young Lee,Sang Ho Jeon,Seungwu Han,Jeong Hwan Kim,Tae Joo Park,Byeong‐Gyu Park,Cheol Seong Hwang	92
8	The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO₂Films on Ge Substrate 2012 ·ECS Journal of Solid State Science and Technology ·Hyung‐Suk Jung,Sang Ho Jeon,Hyo Kyeom Kim,(unknown),Sang‐Young Lee,Joohwi Lee,Yoon Jang Chung,Deok‐Yong Cho,Nae-In Lee,Tae Joo Park,Jung‐Hae Choi,Seungwu Han,Cheol Seong Hwang	27
9	Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect 2012 ·Applied Physics Letters ·Hyo Kyeom Kim,(unknown),Jae Ho Lee,Tae Joo Park,Cheol Seong Hwang	22
10	Properties of Atomic Layer Deposited HfO₂Films on Ge Substrates Depending on Process Temperatures 2012 ·Journal of The Electrochemical Society ·Hyung‐Suk Jung,Hyo Kyeom Kim,(unknown),Sang‐Young Lee,Joohwi Lee,Jin‐Ho Park,Jae Hyuck Jang,(unknown),Yoon Jang Chung,Deok‐Yong Cho,Nae-In Lee,Tae Joo Park,Jung‐Hae Choi,Cheol Seong Hwang	16
11	Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$ 2012 ·IEEE Electron Device Letters ·Hyo Kyeom Kim,Sang‐Young Lee,(unknown),Tae Joo Park,Rino Choi,Cheol Seong Hwang	20
12	Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics 2011 ·IEEE Transactions on Electron Devices ·Hyung‐Suk Jung,(unknown),(unknown),Sang‐Young Lee,Hyo Kyeom Kim,Do Hyun Kim,Kyu Hwan Oh,Jungmin Park,(unknown),(unknown),Nae-In Lee,Cheol Seong Hwang	36
13	Thermally robust atomic layer deposited ZrO<inf>2</inf> gate dielectric films upon the post-deposition annealing 2011 ·Hyung‐Suk Jung,Hyo Kyeom Kim,Sang‐Young Lee,(unknown),Tae Joo Park,Cheol Seong Hwang	0
14	The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics 2011 ·Electrochemical and Solid-State Letters ·Hyung‐Suk Jung,Jae Hyuck Jang,Deok‐Yong Cho,(unknown),Hyo Kyeom Kim,Sang‐Young Lee,Cheol Seong Hwang	25
15	Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film 2011 ·Journal of Applied Physics ·Hyo Kyeom Kim,Hyung‐Suk Jung,Jae Hyuck Jang,Jinho Park,Tae Joo Park,Seok‐Hee Lee,Cheol Seong Hwang	7
16	Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics 2010 ·Journal of The Electrochemical Society ·Hyung‐Suk Jung,Hyo Kyeom Kim,Jeong Hwan Kim,Seok-Jun Won,Deok‐Yong Cho,Joohwi Lee,Sang‐Young Lee,Cheol Seong Hwang,Jungmin Park,(unknown),(unknown),Nae-In Lee,Sung Heo	18
17	Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics 2010 ·IEEE Electron Device Letters ·Hyung‐Suk Jung,(unknown),Hyo Kyeom Kim,Jeong Hwan Kim,Seok-Jun Won,Joohwi Lee,Sang‐Young Lee,Cheol Seong Hwang,Jungmin Park,(unknown),(unknown),Nae-In Lee	6
18	The Effect of Nitrogen in HfO_xN_y and ZrO_xN_y on Dielectric Properties and BTI Characteristics 2010 ·ECS Transactions ·Hyung‐Suk Jung,Hyo Kyeom Kim,Jeong Hwan Kim,Sang‐Young Lee,Jung Min Park,(unknown),(unknown),Nae-In Lee,Cheol Seong Hwang	3
19	The Bias Temperature Instability Characteristics of In Situ Nitrogen Incorporated ZrO[sub x]N[sub y] Gate Dielectrics 2010 ·Electrochemical and Solid-State Letters ·Hyung‐Suk Jung,(unknown),Hyo Kyeom Kim,Jeong Hwan Kim,Seok-Jun Won,Joohwi Lee,Sang‐Young Lee,Cheol Seong Hwang,(unknown),(unknown),Nae-In Lee,Deok‐Yong Cho	5
20	The V_FB Modulation Effect of ALD Grown Al₂O₃, SrO, La₂O₃ Capping Layers with HfO₂ Gate Dielectrics 2010 ·ECS Transactions ·Sang‐Young Lee,Hyung‐Suk Jung,Hyo Kyeom Kim,Sang Woon Lee,(unknown),Cheol Seong Hwang	7

About Hyo Kyeom Kim

Hyo Kyeom Kim is a scholar working on Electrical and Electronic Engineering, Bioengineering and Materials Chemistry, having authored 21 papers that have together received 580 indexed citations. Recurring topics across this work include Semiconductor materials and devices (21 papers), Ferroelectric and Negative Capacitance Devices (15 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). The work is most often cited by research in Electrical and Electronic Engineering (566 citations), Materials Chemistry (364 citations) and Electronic, Optical and Magnetic Materials (29 citations). Hyo Kyeom Kim has collaborated with scholars based in South Korea and Germany. Frequent co-authors include Cheol Seong Hwang, Sang‐Young Lee, Woongkyu Lee, Yu Jin Kim, Han‐Joon Kim, Min Hyuk Park, Tae Joo Park, Deok‐Yong Cho, Hyung‐Suk Jung and Seungwu Han. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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