Tsunehiro Ino

602 citations

27 papers · 487 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Integrated Circuits and Semiconductor Failure Analysis
Materials Chemistry
- Electronic and Structural Properties of Oxides
- Ferroelectric and Piezoelectric Materials

Papers in

Electrical and Electronic Engineering 26
- Semiconductor materials and devices 25
- Advancements in Semiconductor Devices and Circuit Design 12
- Ferroelectric and Negative Capacitance Devices 11
- Integrated Circuits and Semiconductor Failure Analysis 7
Surfaces, Coatings and Films 3
- Electron and X-Ray Spectroscopy Techniques 3

Co-authors: Yuuichi Kamimuta Akira Nishiyama Yoshiki Kamata Masato Koyama Yasushi Nakasaki Masumi Saitoh Shosuke Fujii M. Koike
Journals: Japanese Journal of Applied Physics (5 papers)Applied Surface Science (1 paper)Applied Physics Letters (1 paper)Solid-State Electronics (1 paper)Physical Review B (1 paper)
Partner nations: Japan

In The Last Decade

Tsunehiro Ino

26 papers receiving 468 citations

Peers

Countries citing papers authored by Tsunehiro Ino

Since Specialization

Citations

This map shows the geographic impact of Tsunehiro Ino's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Tsunehiro Ino with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Tsunehiro Ino more than expected).

Fields of papers citing papers by Tsunehiro Ino

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Tsunehiro Ino. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Tsunehiro Ino. The network helps show where Tsunehiro Ino may publish in the future.

Co-authors

The 25 scholars most cited alongside Tsunehiro Ino, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Tsunehiro Ino Line = papers co-authored together Tsunehiro Ino links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Impact of specific failure mechanisms on endurance improvement for HfO<inf>2</inf>-based ferroelectric tunnel junction memory M. Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Fang Guo-hui, Tsunehiro Ino, Yasushi Nakasaki, H Takahara, J. Ullmann, Masumi Saitoh	2018	16
2	First demonstration and performance improvement of ferroelectric HfO<inf>2</inf>-based resistive switch with low operation current and intrinsic diode property Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Yasushi Nakasaki, H Takahara, Masumi Saitoh	2016	91
3	Improvement in C-V characteristics of Ge metal-oxide semiconductor capacitor by H2O2 incorporated HCl pretreatment Applied Physics Letters ·Yoshiki Kamata, Tsunehiro Ino, Masato Koyama, Akira Nishiyama	2008	10
4	Dielectric Constant Behavior of Hf–O–N System Japanese Journal of Applied Physics ·Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Masato Koyama, Akira Nishiyama	2006	32
5	Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO₂ Gate Dielectrics Japanese Journal of Applied Physics ·Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Masato Koyama, Akira Nishiyama	2006	9
6	Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films Japanese Journal of Applied Physics ·Masato Koyama, Yuuichi Kamimuta, M. Koike, Tsunehiro Ino, Akira Nishiyama	2005	9
7	Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO2 Gate Dielectric Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Ryosuke Iijima, Yixiao Wu, Akira Nishiyama	2005	3
8	Direct Comparison of ZrO₂ and HfO₂ on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks Japanese Journal of Applied Physics ·Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama	2005	76
9	Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy Japanese Journal of Applied Physics ·Yuuichi Kamimuta, M. Koike, Tsunehiro Ino, Masamichi Suzuki, Masato Koyama, Y. Tsunashima, Akira Nishiyama	2005	26
10	Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks Yoshiki Kamata, Yuuichi Kamimuta, Tsunehiro Ino, Akira Nishiyama	2004	1
11	Systematic Examination of Boron Diffusion Phenomenon in HfSiON High-k Gate Insulator MRS Proceedings ·Masato Koyama, Tsunehiro Ino, Yuuichi Kamimuta, Masamichi Suzuki, Italo De Murtas, Ivanildo Félix da	2004	2
12	Characterization of Si(1 0 0)/HfSiON interface Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Mariko Suzuki, A. Takashima, M. Koyama, Ryosuke Iijima, Tsunehiro Ino, F. Boiani	2004	5
13	Degradation mechanism of HfSiON gate insulator and effect of nitrogen composition on the statistical distribution of the breakdown M. Koyama, Hideki Satake, M. Koike, Tsunehiro Ino, Mariko Suzuki, Ryosuke Iijima, Марина Александровна Марышева, A. Takashima, Ivanildo Félix da, Akira Nishiyama	2004	10
14	Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs M. Koike, Tsunehiro Ino, Марина Александровна Марышева, M. Koyama, S.P. Gogoleva, Mariko Suzuki, Yuichiro Mitani, Akira Nishiyama, Y. Tsunashima	2004	13
15	Characterization of high-k materials for the advancement of high-speed ULSIs e-Journal of Surface Science and Nanotechnology ·Akira Nishiyama, Yoshiki Kamata, Ryosuke Iijima, M. Koike, Tsunehiro Ino, Masato Koyama, Yuuichi Kamimuta, Mizuki Ono, Masamichi Suzuki, Ivanildo Félix da, Akira Takashima, Arthur Anderson, Seiji Inumiya, ريمان أحمد عبدالعال	2003	2
16	Ultra-thin (EOT ＜ 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications M. Koike, Tsunehiro Ino, Masato Koyama, Yoshiki Kamata, Yuuichi Kamimuta, Masamichi Suzuki, Akira Takashima, Yuichiro Mitani, Akira Nishiyama, Y. Tsunashima	2003	1
17	Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs Takeshi Yamaguchi, Ryosuke Iijima, Tsunehiro Ino, Akira Nishiyama, Hideki Satake, Noburu Fukushima	2003	26
18	Novel dielectric breakdown model of Hf-silicate with high temperature annealing Takeshi Yamaguchi, Tsunehiro Ino, Hideki Satake, Noburu Fukushima	2003	5
19	A resonance photoionization sputtered neutral mass spectrometry instrument for submicron microarea analysis of ULSI devices Applied Surface Science ·Magreta, Н. Мазурик, M. Sugaya, Tsunehiro Ino, Hiroshi Kakibayashi, Keiichi Kanehori, Elizabeth A. Zimmer	2002	8
20	Effect of substitution of Zn2+ for Cu2+ on the magnetic properties of La2Cu1−xZnxO4 single crystals Physica B Condensed Matter ·K. Uchinokura, Tsunehiro Ino, Ichiro Terasaki, I. Tsukada	1995	20

About Tsunehiro Ino

Tsunehiro Ino is a scholar working on Electrical and Electronic Engineering, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 27 papers that have together received 487 indexed citations. Recurring topics across this work include Semiconductor materials and devices (25 papers), Advancements in Semiconductor Devices and Circuit Design (12 papers), Ferroelectric and Negative Capacitance Devices (11 papers), Integrated Circuits and Semiconductor Failure Analysis (7 papers), Electronic and Structural Properties of Oxides (4 papers), Copper Interconnects and Reliability (3 papers), Semiconductor materials and interfaces (3 papers) and Electron and X-Ray Spectroscopy Techniques (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (447 citations), Materials Chemistry (152 citations), Atomic and Molecular Physics, and Optics (80 citations), Electronic, Optical and Magnetic Materials (44 citations) and Condensed Matter Physics (22 citations). Tsunehiro Ino has collaborated with scholars based in Japan. Frequent co-authors include Yuuichi Kamimuta, Akira Nishiyama, Yoshiki Kamata, Masato Koyama, Yasushi Nakasaki, Masumi Saitoh, Shosuke Fujii, M. Koike, Masamichi Suzuki and Ryosuke Iijima. Their work appears in journals such as Japanese Journal of Applied Physics, Applied Surface Science, Applied Physics Letters, Solid-State Electronics and Physical Review B.

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