Seok-Jun Won

413 total citations
27 papers, 363 citations indexed

About

Seok-Jun Won is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Seok-Jun Won has authored 27 papers receiving a total of 363 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Seok-Jun Won's work include Semiconductor materials and devices (23 papers), Copper Interconnects and Reliability (9 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Seok-Jun Won is often cited by papers focused on Semiconductor materials and devices (23 papers), Copper Interconnects and Reliability (9 papers) and Ferroelectric and Negative Capacitance Devices (9 papers). Seok-Jun Won collaborates with scholars based in South Korea. Seok-Jun Won's co-authors include Hyeong Joon Kim, Cheol Seong Hwang, Gyu‐Jin Choi, Jaeyeong Heo, Nae-In Lee, Seong Keun Kim, Sang‐Young Lee, Jeong Hwan Kim, Sang Woon Lee and Sang‐Hyun Park and has published in prestigious journals such as Chemistry of Materials, Journal of The Electrochemical Society and ACS Applied Materials & Interfaces.

In The Last Decade

Seok-Jun Won

26 papers receiving 352 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Seok-Jun Won South Korea 12 343 244 64 22 21 27 363
W.T. Yen Taiwan 9 327 1.0× 358 1.5× 89 1.4× 47 2.1× 12 0.6× 12 393
G. J. Leusink United States 8 342 1.0× 193 0.8× 84 1.3× 35 1.6× 22 1.0× 18 386
Dung-Ching Perng Taiwan 13 267 0.8× 182 0.7× 169 2.6× 48 2.2× 30 1.4× 27 368
Hideaki Agura Japan 6 356 1.0× 433 1.8× 129 2.0× 40 1.8× 22 1.0× 17 484
Bum Ki Moon Japan 8 164 0.5× 163 0.7× 53 0.8× 23 1.0× 14 0.7× 21 222
Tõnis Arroval Estonia 13 301 0.9× 283 1.2× 41 0.6× 29 1.3× 24 1.1× 20 364
Pierre‐Yves Lesaicherre Japan 8 311 0.9× 288 1.2× 74 1.2× 56 2.5× 40 1.9× 16 370
J. Mass Colombia 6 241 0.7× 336 1.4× 126 2.0× 20 0.9× 7 0.3× 17 356
Ruslan Muydinov Germany 10 238 0.7× 232 1.0× 40 0.6× 23 1.0× 25 1.2× 35 325
Y. Senzaki United States 11 404 1.2× 168 0.7× 51 0.8× 17 0.8× 19 0.9× 24 445

Countries citing papers authored by Seok-Jun Won

Since Specialization
Citations

This map shows the geographic impact of Seok-Jun Won's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Seok-Jun Won with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Seok-Jun Won more than expected).

Fields of papers citing papers by Seok-Jun Won

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Seok-Jun Won. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Seok-Jun Won. The network helps show where Seok-Jun Won may publish in the future.

Co-authorship network of co-authors of Seok-Jun Won

This figure shows the co-authorship network connecting the top 25 collaborators of Seok-Jun Won. A scholar is included among the top collaborators of Seok-Jun Won based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Seok-Jun Won. Seok-Jun Won is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Jeong, Dae-Eun, et al.. (2019). Innovative approaches to the invisible defect on STT-MRAM. Microelectronics Reliability. 100-101. 113431–113431. 1 indexed citations
2.
Han, Yong-Woon, et al.. (2017). High resolution short defect localization in advanced FinFET device using EBAC and EBIRCh. 1–4. 8 indexed citations
3.
Park, Sang-Hyun, et al.. (2012). Investigation on spatially separated atomic layer deposition by gas flow simulation and depositing Al2O3 films. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 30(5). 10 indexed citations
4.
Won, Seok-Jun, et al.. (2011). Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water. Applied Surface Science. 257(23). 10311–10313. 2 indexed citations
5.
Won, Seok-Jun, et al.. (2011). Improvement in the performance of ZnO thin film transistors by using ultralow-pressure sputtering. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(3). 1 indexed citations
6.
Won, Seok-Jun, Sang‐Hyun Park, Tae Joo Park, et al.. (2010). Capacitance and Interface Analysis of Transparent Analog Capacitor Using Indium Tin Oxide Electrodes and High-k Dielectrics. Journal of The Electrochemical Society. 157(7). G170–G170. 12 indexed citations
7.
Jung, Hyung‐Suk, Hyo Kyeom Kim, Jeong Hwan Kim, et al.. (2010). Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics. Journal of The Electrochemical Society. 157(5). G121–G121. 18 indexed citations
8.
Won, Seok-Jun, et al.. (2010). High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal–Organic Silicon Precursor and Oxygen Radical. IEEE Electron Device Letters. 31(8). 857–859. 69 indexed citations
9.
Jung, Hyung‐Suk, Hyo Kyeom Kim, Jeong Hwan Kim, et al.. (2010). Turn-Around Effect of $V_{\rm th}$ Shift During the Positive Bias Temperature Instability of the n-Type Transistor With $\hbox{HfO}_{x}\hbox{N}_{y}$ Gate Dielectrics. IEEE Electron Device Letters. 31(12). 1479–1481. 6 indexed citations
10.
Won, Seok-Jun, et al.. (2009). Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N[sub 2]O Gas. Electrochemical and Solid-State Letters. 13(2). G13–G13. 19 indexed citations
11.
Heo, Jaeyeong, Sang‐Young Lee, Seok-Jun Won, et al.. (2009). Atomic Layer Deposition of Ruthenium Nanoparticles Using a Low-Density Dielectric Film as Template Structure. Chemistry of Materials. 21(17). 4006–4011. 13 indexed citations
12.
Won, Seok-Jun, et al.. (2009). The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films. Chemistry of Materials. 21(19). 4374–4379. 22 indexed citations
13.
Choi, Gyu‐Jin, Seong Keun Kim, Seok-Jun Won, Hyeong Joon Kim, & Cheol Seong Hwang. (2009). Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants. Journal of The Electrochemical Society. 156(9). G138–G138. 42 indexed citations
14.
Heo, Jaeyeong, et al.. (2008). The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD. Electrochemical and Solid-State Letters. 11(8). H210–H210. 26 indexed citations
15.
16.
Won, Seok-Jun, Yongkuk Jeong, Ho-Kyu Kang, et al.. (2004). Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 Å on conventional metal electrode. 23–24. 1 indexed citations
17.
Won, Seok-Jun, et al.. (2002). Conformal CVD-ruthenium process for MIM capacitor in giga-bit DRAMs. 789–792. 4 indexed citations
18.
19.
Joo, Jae‐Hyun, et al.. (2001). Rugged Metal Electrode (RME) for High Density Memory Devices. Japanese Journal of Applied Physics. 40(8A). L826–L826. 5 indexed citations
20.
Kim, Jin‐Won, Seung Hwan Lee, Seok-Jun Won, et al.. (2000). Electrical Properties of Crystalline Ta2O5 with Ru Electrode. Japanese Journal of Applied Physics. 39(4S). 2094–2094. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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