Laurent Travers

2.6k total citations
62 papers, 2.1k citations indexed

About

Laurent Travers is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, Laurent Travers has authored 62 papers receiving a total of 2.1k indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 35 papers in Biomedical Engineering and 32 papers in Materials Chemistry. Recurrent topics in Laurent Travers's work include Nanowire Synthesis and Applications (28 papers), GaN-based semiconductor devices and materials (26 papers) and Semiconductor Quantum Structures and Devices (21 papers). Laurent Travers is often cited by papers focused on Nanowire Synthesis and Applications (28 papers), GaN-based semiconductor devices and materials (26 papers) and Semiconductor Quantum Structures and Devices (21 papers). Laurent Travers collaborates with scholars based in France, Russia and Thailand. Laurent Travers's co-authors include Jean‐Christophe Harmand, G. Patriarche, Frank Glas, Maria Tchernycheva, G. É. Cirlin, N. Gogneau, Nicolas Péré‐Laperne, В. Г. Дубровский, Lianhe Li and Federico Panciera and has published in prestigious journals such as Physical Review Letters, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

Laurent Travers

59 papers receiving 2.0k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Laurent Travers France 23 1.3k 1.1k 1.0k 880 571 62 2.1k
H. Weman Norway 26 1.4k 1.1× 1.4k 1.2× 1.2k 1.2× 1.3k 1.5× 447 0.8× 125 2.5k
Fabrice Oehler France 25 895 0.7× 895 0.8× 900 0.9× 681 0.8× 755 1.3× 99 1.9k
George Immink Netherlands 11 1.2k 0.9× 963 0.8× 797 0.8× 636 0.7× 148 0.3× 11 1.7k
R. Songmuang Germany 27 803 0.6× 946 0.8× 869 0.9× 1.2k 1.4× 673 1.2× 48 2.1k
M. Stoffel France 26 661 0.5× 1.4k 1.2× 998 1.0× 1.6k 1.8× 161 0.3× 104 2.4k
Martin Heiß Switzerland 19 1.5k 1.2× 1.1k 1.0× 798 0.8× 895 1.0× 299 0.5× 27 1.9k
Masanari Koguchi Japan 11 1.0k 0.8× 864 0.8× 740 0.7× 569 0.6× 120 0.2× 28 1.5k
Jessica L. Lensch-Falk United States 16 1.0k 0.8× 1.1k 1.0× 1.2k 1.2× 508 0.6× 82 0.1× 19 2.0k
Eric R. Hemesath United States 21 1.4k 1.1× 1.3k 1.2× 873 0.9× 820 0.9× 86 0.2× 32 2.0k
J. P. Nys France 22 573 0.4× 757 0.7× 547 0.5× 779 0.9× 125 0.2× 57 1.3k

Countries citing papers authored by Laurent Travers

Since Specialization
Citations

This map shows the geographic impact of Laurent Travers's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Laurent Travers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Laurent Travers more than expected).

Fields of papers citing papers by Laurent Travers

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Laurent Travers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Laurent Travers. The network helps show where Laurent Travers may publish in the future.

Co-authorship network of co-authors of Laurent Travers

This figure shows the co-authorship network connecting the top 25 collaborators of Laurent Travers. A scholar is included among the top collaborators of Laurent Travers based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Laurent Travers. Laurent Travers is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gogneau, N., Anne Chevillard, Laurent Couraud, et al.. (2025). The surface charge effects: A route to the enhancement of the piezoelectric conversion efficiency in GaN nanowires. SPIRE - Sciences Po Institutional REpository. 9. 100082–100082. 1 indexed citations
2.
Cambril, E., Laurent Travers, Ali Madouri, et al.. (2025). Two-step growth procedure for homogeneous GaN NW arrays on graphene. Nanotechnology. 36(13). 135604–135604.
3.
Panciera, Federico, et al.. (2023). Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale. Nanoscale Advances. 5(11). 2994–3004. 2 indexed citations
4.
Cattoni, Andréa, Fabrice Oehler, Fabien Bayle, et al.. (2020). Influence of surface passivation on the electrical properties of p–i–n GaAsP nanowires. Applied Physics Letters. 117(12). 4 indexed citations
5.
Panciera, Federico, Zhaslan Baraissov, G. Patriarche, et al.. (2020). Phase Selection in Self-catalyzed GaAs Nanowires. Nano Letters. 20(3). 1669–1675. 102 indexed citations
6.
Scaccabarozzi, Andrea, Andréa Cattoni, G. Patriarche, et al.. (2020). Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst. Nanoscale. 12(35). 18240–18248. 5 indexed citations
7.
Piazza, Valerio, Fabien Bayle, Andréa Cattoni, et al.. (2019). Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications. Nanotechnology. 31(14). 145708–145708. 11 indexed citations
8.
Patriarche, G., Ludovic Largeau, O. Mauguin, et al.. (2019). Microstructure of GaAs thin films grown on glass using Ge seed layers fabricated by aluminium induced crystallization. Thin Solid Films. 694. 137737–137737. 3 indexed citations
9.
Collin, Stéphane, G. Patriarche, Fabrice Oehler, et al.. (2019). Correlated optical and structural analyses of individual GaAsP/GaP core–shell nanowires. Nanotechnology. 30(30). 304001–304001. 6 indexed citations
10.
Baraissov, Zhaslan, Federico Panciera, Laurent Travers, Jean‐Christophe Harmand, & Utkur Mirsaidov. (2019). Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusion. The Journal of Physical Chemistry Letters. 10(17). 5082–5089.
11.
Scaccabarozzi, Andrea, G. Patriarche, Laurent Travers, et al.. (2019). Evidence and control of unintentional As-rich shells in GaAs 1– x P x nanowires. Nanotechnology. 30(29). 294003–294003. 3 indexed citations
12.
Mancini, Lorenzo, Martina Morassi, O. Brandt, et al.. (2019). Optical properties of GaN nanowires grown on chemical vapor deposited-graphene. Nanotechnology. 30(21). 214005–214005. 10 indexed citations
13.
Morassi, Martina, Ludovic Largeau, Fabrice Oehler, et al.. (2018). Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy. Crystal Growth & Design. 18(4). 2545–2554. 16 indexed citations
14.
Harmand, Jean‐Christophe, G. Patriarche, Frank Glas, et al.. (2018). Atomic Step Flow on a Nanofacet. Physical Review Letters. 121(16). 166101–166101. 124 indexed citations
15.
Collin, Stéphane, Pierre Râle, Nicolas Chauvin, et al.. (2017). In situpassivation of GaAsP nanowires. Nanotechnology. 28(49). 495707–495707. 26 indexed citations
16.
Gatilova, L., E. Galopin, Laurent Travers, et al.. (2017). Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact. Nanoscale. 9(13). 4610–4619. 31 indexed citations
17.
Galopin, E., Ludovic Largeau, G. Patriarche, et al.. (2011). Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy. Nanotechnology. 22(24). 245606–245606. 51 indexed citations
18.
Ouerghi, Abdelkarim, et al.. (2010). Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers. Materials science forum. 645-648. 585–588. 4 indexed citations
19.
Mangeney, J., Laurent Travers, C. Minot, et al.. (2009). Epitaxial growth and picosecond carrier dynamics of GaInAs/GaInNAs superlattices. Applied Physics Letters. 95(14). 6 indexed citations
20.
Li, Lianhe, Vincent Sallet, G. Patriarche, et al.. (2003). Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy. Journal of Crystal Growth. 263(1-4). 58–62. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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