Hyeongnam Kim

475 citations

17 papers · 401 indexed · h-index 10

Condensed Matter Physics top 5%
- GaN-based semiconductor devices and materials 10
Electronic, Optical and Magnetic Materials
- Ga2O3 and related materials 4
Electrical and Electronic Engineering
- Semiconductor materials and devices 7
- Advancements in Semiconductor Devices and Circuit Design 4
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 4
- Semiconductor Quantum Structures and Devices 2
Materials Chemistry
- ZnO doping and properties 4
Biomedical Engineering
- Nanowire Synthesis and Applications 2

Co-authors: Wu Lu Jaesun Lee Dongmin Liu Donghwan Kim Zhaojun Lin Michael L. Schuette James C. Mabon Soo Hong Lee
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (4 papers)Physical Chemistry Chemical Physics (1 paper)Applied Surface Science (1 paper)
Partner nations: United States South Korea France

In The Last Decade

Hyeongnam Kim

16 papers receiving 387 citations

Peers

Countries citing papers authored by Hyeongnam Kim

Since Specialization

Citations

This map shows the geographic impact of Hyeongnam Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hyeongnam Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hyeongnam Kim more than expected).

Fields of papers citing papers by Hyeongnam Kim

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hyeongnam Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hyeongnam Kim. The network helps show where Hyeongnam Kim may publish in the future.

Co-authorship network

The 23 scholars most cited alongside Hyeongnam Kim, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Hyeongnam Kim Line = papers co-authored together Hyeongnam Kim links everyone, so they are left out of the graph.

All Works

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17 of 17 papers shown

#	Work
1	Analysis of surface states in ZnO nanowire field effect transistors Applied Surface Science ·Ye Shao,Jongwon Yoon,Hyeongnam Kim,Takhee Lee,Wu Lu	2014	7
2	Temperature Dependence of Electron Transport in ZnO Nanowire Field Effect Transistors IEEE Transactions on Electron Devices ·Ye Shao,Jongwon Yoon,Hyeongnam Kim,Takhee Lee,Wu Lu	2014	3
3	Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors Journal of Electronic Materials ·Hyeongnam Kim,Digbijoy N. Nath,Siddharth Rajan,Wu Lu	2012	6
4	Cl 2 / BCl 3 / Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ·Hyeongnam Kim,Michael L. Schuette,Wu Lu	2011	13
5	Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Hyeongnam Kim,Wu Lu	2010	1
6	Arylstibonic acids: Novel inhibitors and activators of human topoisomerase IB Bioorganic Chemistry ·Hyeongnam Kim,John H. Cardellina,Rhone K. Akee,James J. Champoux,James T. Stivers	2008	9
7	Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing Journal of Electronic Materials ·Hyeongnam Kim,Michael L. Schuette,Jaesun Lee,Wu Lu,James C. Mabon	2007	16
8	Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs Solid-State Electronics ·Dongmin Liu,Mantu K. Hudait,Yong Lin,Hyeongnam Kim,Steven A. Ringel,Wu Lu	2007	7
9	Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing Applied Physics Letters ·Hyeongnam Kim,Michael L. Schuette,Hyunchul Jung,Junghui Song,Jaesun Lee,Wu Lu,James C. Mabon	2006	47
10	Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing Applied Physics Letters ·Hyeongnam Kim,Jaesun Lee,Dongmin Liu,Wu Lu	2005	84
11	TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING International Journal of High Speed Electronics and Systems ·Hyeongnam Kim,Jaesun Lee,Wu Lu	2004	0
12	Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors Applied Physics Letters ·Jaesun Lee,Dongmin Liu,Hyeongnam Kim,Wu Lu	2004	23
13	Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures Applied Physics Letters ·Zhaojun Lin,Hyeongnam Kim,Jaesun Lee,Wu Lu	2004	55
14	Post-annealing effects on device performance of AlGaN/GaN HFETs Solid-State Electronics ·Jaesun Lee,Dongmin Liu,Hyeongnam Kim,Wu Lu	2004	35
15	Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface Solar Energy Materials and Solar Cells ·Hyeongnam Kim,Daewon Kim,Gyuyul Lee,Dongseop Kim,Soo Hong Lee	2002	40
16	Influence of CdS heat treatment on the microstructure of CdS and the performance of CdS/CdTe solar cells Solar Energy Materials and Solar Cells ·Hyeongnam Kim,Donghwan Kim	2001	33
17	Spectroscopic measurement of the acid dissociation constant of 2-naphthol and the second dissociation constant of carbonic acid at elevated temperatures Physical Chemistry Chemical Physics ·Sung Nam Park,Hyeongnam Kim,Keon Kim,Jeong Ae Lee,Dong Seok Lho	1999	22

About Hyeongnam Kim

Hyeongnam Kim is a scholar working on Condensed Matter Physics, Filtration and Separation and Electronic, Optical and Magnetic Materials, having authored 17 papers that have together received 401 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (10 papers), Semiconductor materials and devices (7 papers), Semiconductor materials and interfaces (4 papers), Ga2O3 and related materials (4 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), ZnO doping and properties (4 papers), Semiconductor Quantum Structures and Devices (2 papers) and Nanowire Synthesis and Applications (2 papers). The work is most often cited by research in Condensed Matter Physics (270 citations), Electronic, Optical and Magnetic Materials (124 citations) and Electrical and Electronic Engineering (280 citations). Hyeongnam Kim has collaborated with scholars based in United States, South Korea and France. Frequent co-authors include Wu Lu, Jaesun Lee, Dongmin Liu, Donghwan Kim, Dongmin Liu, Zhaojun Lin, Michael L. Schuette, James C. Mabon, Soo Hong Lee and Dongseop Kim. Their work appears in journals such as Applied Physics Letters, Physical Chemistry Chemical Physics and Applied Surface Science.

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