Hyeongnam Kim

475 total citations
17 papers, 401 citations indexed

About

Hyeongnam Kim is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, Hyeongnam Kim has authored 17 papers receiving a total of 401 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 10 papers in Condensed Matter Physics and 6 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in Hyeongnam Kim's work include GaN-based semiconductor devices and materials (10 papers), Semiconductor materials and devices (7 papers) and Semiconductor materials and interfaces (4 papers). Hyeongnam Kim is often cited by papers focused on GaN-based semiconductor devices and materials (10 papers), Semiconductor materials and devices (7 papers) and Semiconductor materials and interfaces (4 papers). Hyeongnam Kim collaborates with scholars based in United States, South Korea and France. Hyeongnam Kim's co-authors include Wu Lu, Jaesun Lee, Dongmin Liu, Donghwan Kim, Dongmin Liu, Michael L. Schuette, Zhaojun Lin, James C. Mabon, Dongseop Kim and Daewon Kim and has published in prestigious journals such as Applied Physics Letters, Physical Chemistry Chemical Physics and Applied Surface Science.

In The Last Decade

Hyeongnam Kim

16 papers receiving 387 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Hyeongnam Kim United States 10 280 270 135 127 124 17 401
Po-Hung Lin Taiwan 9 111 0.4× 114 0.4× 116 0.9× 184 1.4× 156 1.3× 18 327
Toshiharu Kubo Japan 13 319 1.1× 319 1.2× 148 1.1× 57 0.4× 212 1.7× 27 423
Carsten Habenicht Germany 10 154 0.6× 108 0.4× 207 1.5× 61 0.5× 96 0.8× 16 336
Oleg A. Kondratev Russia 9 92 0.3× 88 0.3× 258 1.9× 147 1.2× 91 0.7× 51 390
Modestos Athanasiou United Kingdom 14 211 0.8× 151 0.6× 160 1.2× 160 1.3× 96 0.8× 27 386
Elías Muñoz Spain 10 188 0.7× 218 0.8× 187 1.4× 55 0.4× 211 1.7× 21 402
Chunchun Wu China 8 205 0.7× 94 0.3× 373 2.8× 174 1.4× 142 1.1× 12 539
Aneta Drabińska Poland 11 115 0.4× 115 0.4× 224 1.7× 162 1.3× 59 0.5× 45 370
J. J. Song China 6 136 0.5× 387 1.4× 224 1.7× 245 1.9× 170 1.4× 15 517
Walid Belaid Türkiye 10 132 0.5× 79 0.3× 161 1.2× 109 0.9× 57 0.5× 28 284

Countries citing papers authored by Hyeongnam Kim

Since Specialization
Citations

This map shows the geographic impact of Hyeongnam Kim's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Hyeongnam Kim with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Hyeongnam Kim more than expected).

Fields of papers citing papers by Hyeongnam Kim

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Hyeongnam Kim. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Hyeongnam Kim. The network helps show where Hyeongnam Kim may publish in the future.

Co-authorship network of co-authors of Hyeongnam Kim

This figure shows the co-authorship network connecting the top 25 collaborators of Hyeongnam Kim. A scholar is included among the top collaborators of Hyeongnam Kim based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Hyeongnam Kim. Hyeongnam Kim is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

17 of 17 papers shown
1.
Yoon, Jongwon, et al.. (2014). Analysis of surface states in ZnO nanowire field effect transistors. Applied Surface Science. 301. 2–8. 7 indexed citations
2.
Yoon, Jongwon, et al.. (2014). Temperature Dependence of Electron Transport in ZnO Nanowire Field Effect Transistors. IEEE Transactions on Electron Devices. 61(2). 625–630. 3 indexed citations
3.
Kim, Hyeongnam, Digbijoy N. Nath, Siddharth Rajan, & Wu Lu. (2012). Polarization-Engineered Ga-Face GaN-Based Heterostructures for Normally-Off Heterostructure Field-Effect Transistors. Journal of Electronic Materials. 42(1). 10–14. 6 indexed citations
4.
Kim, Hyeongnam, et al.. (2011). Cl 2 / BCl 3 / Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(3). 13 indexed citations
5.
Kim, Hyeongnam & Wu Lu. (2010). Analysis of trapping effects in AlGaN/GaN HEMTs based on near zero bias output conductance. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 7(7-8). 2004–2006. 1 indexed citations
6.
Kim, Hyeongnam, John H. Cardellina, Rhone K. Akee, James J. Champoux, & James T. Stivers. (2008). Arylstibonic acids: Novel inhibitors and activators of human topoisomerase IB. Bioorganic Chemistry. 36(4). 190–197. 9 indexed citations
7.
Liu, Dongmin, et al.. (2007). Gate length scaling study of InAlAs/InGaAs/InAsP composite channel HEMTs. Solid-State Electronics. 51(6). 838–841. 7 indexed citations
8.
Kim, Hyeongnam, Michael L. Schuette, Jaesun Lee, Wu Lu, & James C. Mabon. (2007). Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing. Journal of Electronic Materials. 36(9). 1149–1155. 16 indexed citations
9.
Kim, Hyeongnam, Michael L. Schuette, Hyunchul Jung, et al.. (2006). Passivation effects in Ni∕AlGaN∕GaN Schottky diodes by annealing. Applied Physics Letters. 89(5). 47 indexed citations
10.
Kim, Hyeongnam, Jaesun Lee, Dongmin Liu, & Wu Lu. (2005). Gate current leakage and breakdown mechanism in unpassivated AlGaN∕GaN high electron mobility transistors by post-gate annealing. Applied Physics Letters. 86(14). 84 indexed citations
11.
Lee, Jaesun, Dongmin Liu, Hyeongnam Kim, & Wu Lu. (2004). Postprocessing annealing effects on direct current and microwave performance of AlGaN∕GaN high electron mobility transistors. Applied Physics Letters. 85(13). 2631–2633. 23 indexed citations
12.
Kim, Hyeongnam, Jaesun Lee, & Wu Lu. (2004). TRAP BEHAVIOR IN AlGaN/GaN HEMTs BY POST-GATE-ANNEALING. International Journal of High Speed Electronics and Systems. 14(3). 769–774.
13.
Lee, Jaesun, Dongmin Liu, Hyeongnam Kim, & Wu Lu. (2004). Post-annealing effects on device performance of AlGaN/GaN HFETs. Solid-State Electronics. 48(10-11). 1855–1859. 35 indexed citations
14.
Lin, Zhaojun, Hyeongnam Kim, Jaesun Lee, & Wu Lu. (2004). Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures. Applied Physics Letters. 84(9). 1585–1587. 55 indexed citations
15.
Kim, Hyeongnam, et al.. (2002). Polycrystalline Si films formed by Al-induced crystallization (AIC) with and without Al oxides at Al/a-Si interface. Solar Energy Materials and Solar Cells. 74(1-4). 323–329. 40 indexed citations
16.
Kim, Hyeongnam & Donghwan Kim. (2001). Influence of CdS heat treatment on the microstructure of CdS and the performance of CdS/CdTe solar cells. Solar Energy Materials and Solar Cells. 67(1-4). 297–304. 33 indexed citations
17.
Kim, Hyeongnam, et al.. (1999). Spectroscopic measurement of the acid dissociation constant of 2-naphthol and the second dissociation constant of carbonic acid at elevated temperatures. Physical Chemistry Chemical Physics. 1(8). 1893–1898. 22 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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