Jinyu Ni

563 total citations
32 papers, 458 citations indexed

About

Jinyu Ni is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering. According to data from OpenAlex, Jinyu Ni has authored 32 papers receiving a total of 458 indexed citations (citations by other indexed papers that have themselves been cited), including 32 papers in Condensed Matter Physics, 21 papers in Electronic, Optical and Magnetic Materials and 14 papers in Electrical and Electronic Engineering. Recurrent topics in Jinyu Ni's work include GaN-based semiconductor devices and materials (30 papers), Ga2O3 and related materials (20 papers) and ZnO doping and properties (13 papers). Jinyu Ni is often cited by papers focused on GaN-based semiconductor devices and materials (30 papers), Ga2O3 and related materials (20 papers) and ZnO doping and properties (13 papers). Jinyu Ni collaborates with scholars based in China. Jinyu Ni's co-authors include Jincheng Zhang, Qian Feng, Yue Hao, Yuanzheng Yue, Yue Hao, Wei Mao, Linjie Liu, Zhonghui Li, Xiaohua Ma and Jinfeng Zhang and has published in prestigious journals such as Applied Surface Science, Journal of Physics Condensed Matter and Japanese Journal of Applied Physics.

In The Last Decade

Jinyu Ni

29 papers receiving 421 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jinyu Ni China	11	395	310	230	131	57	32	458
B. Peres United States	12	347 0.9×	282 0.9×	209 0.9×	100 0.8×	51 0.9×	21	401
Omair I. Saadat United States	10	453 1.1×	423 1.4×	230 1.0×	128 1.0×	76 1.3×	17	545
Ming Tao China	10	258 0.7×	242 0.8×	141 0.6×	80 0.6×	69 1.2×	18	328
E.B. Kaminsky United States	10	309 0.8×	271 0.9×	112 0.5×	95 0.7×	89 1.6×	18	390
Hongling Xiao China	10	324 0.8×	187 0.6×	182 0.8×	123 0.9×	63 1.1×	45	378
Osamu Ishiguro Japan	9	479 1.2×	407 1.3×	232 1.0×	93 0.7×	83 1.5×	12	513
M. Hayden Breckenridge United States	16	506 1.3×	291 0.9×	352 1.5×	165 1.3×	81 1.4×	25	568
M. Kayambaki Greece	11	196 0.5×	201 0.6×	141 0.6×	116 0.9×	114 2.0×	47	346
Chang Min Jeon South Korea	11	364 0.9×	257 0.8×	193 0.8×	134 1.0×	131 2.3×	24	439
Tianli Duan China	9	199 0.5×	237 0.8×	126 0.5×	105 0.8×	38 0.7×	20	337

Countries citing papers authored by Jinyu Ni

Since Specialization

Citations

This map shows the geographic impact of Jinyu Ni's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jinyu Ni with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jinyu Ni more than expected).

Fields of papers citing papers by Jinyu Ni

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jinyu Ni. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jinyu Ni. The network helps show where Jinyu Ni may publish in the future.

Co-authorship network of co-authors of Jinyu Ni

This figure shows the co-authorship network connecting the top 25 collaborators of Jinyu Ni. A scholar is included among the top collaborators of Jinyu Ni based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jinyu Ni. Jinyu Ni is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ni, Jinyu, et al.. (2024). Chirality-selective topological magnon phase transition induced by interplay of anisotropic exchange interactions in honeycomb ferromagnet. Journal of Physics Condensed Matter. 36(25). 255801–255801.

Ni, Jinyu, et al.. (2022). Topological magnons in one-dimensional ferromagnetic Su–Schrieffer–Heeger model with anisotropic interaction. Journal of Physics Condensed Matter. 34(49). 495801–495801. 4 indexed citations

Pan, Lei, et al.. (2018). Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (1 1 1) substrates. Applied Surface Science. 447. 512–517. 38 indexed citations

Pan, Lei, et al.. (2016). Growth of compressively‐strained GaN films on Si(111) substrates with thick AlGaN transition and AlGaN superlattice buffer layers. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 13(5-6). 181–185. 5 indexed citations

Li, Zhonghui, et al.. (2015). Improvement of breakdown and current collapse characteristics of GaN HEMT with a polarization-graded AlGaN buffer. Semiconductor Science and Technology. 30(3). 35007–35007. 22 indexed citations

Yu, Xinxin, Jinyu Ni, Zhonghui Li, et al.. (2014). AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm-Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V. Chinese Physics Letters. 31(3). 37201–37201. 2 indexed citations

Yu, Xinxin, Jinyu Ni, Zhonghui Li, Jianjun Zhou, & Cen Kong. (2014). Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon. Japanese Journal of Applied Physics. 53(5). 51001–51001. 18 indexed citations

Xue, JunShuai, Yue Hao, Jincheng Zhang, & Jinyu Ni. (2010). Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers. Science in China. Series E, Technological sciences. 53(6). 1567–1571. 4 indexed citations

Xue, JunShuai, Yue Hao, Jincheng Zhang, & Jinyu Ni. (2010). Comparative study of different properties of GaN films grown on (0001) sapphire using high and low temperature AlN interlayers. Chinese Physics B. 19(5). 57203–57203. 4 indexed citations

10.

Ni, Jinyu, et al.. (2009). High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors. Chinese Physics B. 18(4). 1601–1608. 10 indexed citations

11.

Hao, Yue, et al.. (2009). Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor. Chinese Physics B. 18(11). 5072–5077. 4 indexed citations

12.

Zhang, Jincheng, et al.. (2009). The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica. 58(5). 3409–3409. 4 indexed citations

13.

Xue, JunShuai, Yue Hao, Jincheng Zhang, & Jinyu Ni. (2009). Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties. 416–418. 1 indexed citations

14.

Ni, Jinyu, et al.. (2009). Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica. 58(7). 4925–4925. 3 indexed citations

15.

Hao, Yue, et al.. (2009). Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD. Journal of Semiconductors. 30(7). 73001–73001. 8 indexed citations

16.

Hao, Yue, Chong Wang, Jinyu Ni, et al.. (2008). Development and characteristic analysis of enhancement-mode recessed-gate AlGaN/GaN HEMT. Science in China. Series E, Technological sciences. 51(6). 784–789. 4 indexed citations

17.

Yue, Yuanzheng, Yue Hao, Qian Feng, et al.. (2008). Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition. Science in China. Series E, Technological sciences. 52(9). 2762–2766. 17 indexed citations

18.

Ni, Jinyu, Jincheng Zhang, Hao Yue, et al.. (2007). Comparison of measuring methods of sheet carrier density in AlGaN/GaN heterostructures. Acta Physica Sinica. 56(11). 6629–6629. 1 indexed citations

19.

Hao, Yue, et al.. (2007). GaN MOS-HEMT Using Ultrathin Al2O3 Dielectric with fmax of 30.8GHz. 1 indexed citations

20.

Gao, Zhiyuan, Yue Hao, Jincheng Zhang, et al.. (2007). Polarity results in different etch pit shapes of screw and edge dislocations in GaN epilayers. 16. 125–128.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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