H. Asahi

5.0k total citations
304 papers, 4.0k citations indexed

About

H. Asahi is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, H. Asahi has authored 304 papers receiving a total of 4.0k indexed citations (citations by other indexed papers that have themselves been cited), including 200 papers in Atomic and Molecular Physics, and Optics, 191 papers in Electrical and Electronic Engineering and 137 papers in Condensed Matter Physics. Recurrent topics in H. Asahi's work include Semiconductor Quantum Structures and Devices (189 papers), GaN-based semiconductor devices and materials (132 papers) and ZnO doping and properties (88 papers). H. Asahi is often cited by papers focused on Semiconductor Quantum Structures and Devices (189 papers), GaN-based semiconductor devices and materials (132 papers) and ZnO doping and properties (88 papers). H. Asahi collaborates with scholars based in Japan, United States and Egypt. H. Asahi's co-authors include Yuichi Kawamura, S. Gonda, K. Asami, Shigehiko Hasegawa, Masahiko Hashimoto, Shūichi Emura, Kumiko Asami, Yikai Zhou, Shun‐ichi Gonda and K. Wakita and has published in prestigious journals such as Advanced Materials, SHILAP Revista de lepidopterología and Nano Letters.

In The Last Decade

H. Asahi

293 papers receiving 3.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. Asahi Japan 33 2.4k 2.4k 1.7k 1.6k 935 304 4.0k
W. C. Mitchel United States 38 2.2k 0.9× 3.1k 1.3× 1.6k 0.9× 1.3k 0.8× 977 1.0× 256 4.7k
J. F. Schetzina United States 34 2.3k 0.9× 3.2k 1.3× 2.0k 1.1× 1.1k 0.7× 638 0.7× 204 4.3k
E. E. Haller United States 24 2.4k 1.0× 2.4k 1.0× 1.2k 0.7× 2.1k 1.3× 773 0.8× 83 4.0k
S. Ruvimov United States 27 3.0k 1.2× 3.0k 1.3× 2.0k 1.1× 1.9k 1.2× 745 0.8× 77 4.7k
H. Mariette France 38 3.8k 1.6× 2.6k 1.1× 2.6k 1.5× 1.6k 1.0× 794 0.8× 275 5.4k
A. Hangleiter Germany 37 3.0k 1.2× 2.3k 1.0× 1.9k 1.1× 3.2k 2.0× 1.3k 1.4× 233 5.2k
S. D. Hersee United States 31 1.2k 0.5× 1.7k 0.7× 1.2k 0.7× 1.6k 1.0× 800 0.9× 99 3.1k
W. S. Hobson United States 30 1.9k 0.8× 3.2k 1.4× 1.0k 0.6× 736 0.5× 613 0.7× 250 4.0k
U. Rossów Germany 27 1.3k 0.5× 1.1k 0.5× 1.1k 0.6× 1.5k 1.0× 663 0.7× 149 2.6k
G. Fishman France 33 3.1k 1.3× 2.2k 0.9× 1.5k 0.8× 932 0.6× 573 0.6× 110 4.2k

Countries citing papers authored by H. Asahi

Since Specialization
Citations

This map shows the geographic impact of H. Asahi's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. Asahi with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. Asahi more than expected).

Fields of papers citing papers by H. Asahi

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. Asahi. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. Asahi. The network helps show where H. Asahi may publish in the future.

Co-authorship network of co-authors of H. Asahi

This figure shows the co-authorship network connecting the top 25 collaborators of H. Asahi. A scholar is included among the top collaborators of H. Asahi based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. Asahi. H. Asahi is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Almokhtar, Mohamed, et al.. (2013). Structural and Optical Characterization of GaN/AlGaN Single Quantum Disk Nanorods. Acta Physica Polonica A. 123(2). 473–475. 2 indexed citations
2.
Almokhtar, Mohamed, Shūichi Emura, Ying Zhou, Shigehiko Hasegawa, & H. Asahi. (2011). Photoluminescence from exciton-polarons in GaGdN/AlGaN multiquantum wells. Journal of Physics Condensed Matter. 23(32). 325802–325802. 6 indexed citations
3.
Takahashi, Makoto, Shūichi Emura, Tetsuya Nakamura, et al.. (2010). The Third Magnetic Phase of GaGdN Detected by SX-MCD. AIP conference proceedings. 411–412. 1 indexed citations
4.
Kim, Kang Min, et al.. (2010). Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells. Journal of Materials Science Materials in Electronics. 21(10). 1024–1029. 3 indexed citations
5.
Zhou, Yikai, Masahiro Takahashi, Shūichi Emura, Shigehiko Hasegawa, & H. Asahi. (2009). Annealing Effect in GaDyN on Optical and Magnetic Properties. Journal of Superconductivity and Novel Magnetism. 23(1). 103–105. 2 indexed citations
6.
Soni, R. K., S. Tripathy, & H. Asahi. (2003). Optical transitions and interface structure in (GaP)m/(AlP)n modulated period superlattices. Physica E Low-dimensional Systems and Nanostructures. 21(1). 131–142. 9 indexed citations
7.
Teraguchi, N., Akira Suzuki, Yasushi Nanishi, et al.. (2002). Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy. Solid State Communications. 122(12). 651–653. 137 indexed citations
8.
Asahi, H., et al.. (2001). Strong Photoluminescence Emission from Polycrystalline GaN Grown on Metal Substrate by NH3 Source MBE. physica status solidi (a). 188(2). 601–604. 5 indexed citations
9.
Zhou, Ying, et al.. (2000). Gas-source MBE growth of Tl-based III–V semiconductors and their Raman scattering characterization. Journal of Crystal Growth. 209(2-3). 547–551. 2 indexed citations
10.
Asahi, H., et al.. (2000). Very small temperature-dependent band-gap energy in TlInGaAs/InP double heterostructures grown by gas-source molecular-beam epitaxy. Applied Physics Letters. 77(14). 2148–2150. 22 indexed citations
11.
Asahi, H., et al.. (1999). Growth of TlInGaAs on InP by Gas-Source Molecular Beam Epitaxy. Japanese Journal of Applied Physics. 38(2S). 1026–1026. 7 indexed citations
12.
Asahi, H., et al.. (1998). Very low resistance ohmic contacts to n-GaN. Journal of Electronic Materials. 27(7). 829–832. 15 indexed citations
13.
Asahi, H.. (1997). Self‐Organized Quantum Wires and Dots in III – V semiconductors. Advanced Materials. 9(13). 1019–1026. 24 indexed citations
14.
15.
Asahi, H., et al.. (1995). Metalorganic molecular beam epitaxy growth characteristics of GaAs using triethylgallium and trisdimethylaminoarsenic. Journal of Applied Physics. 77(5). 1952–1958. 9 indexed citations
16.
Asami, K., H. Asahi, Tetsuya Watanabe, et al.. (1992). Photoluminescence and electroreflectance of GaP/AlP superlattices grown by gas source MBE. Surface Science. 267(1-3). 450–453. 21 indexed citations
17.
Wakita, K., Yuichi Kawamura, Y. Yoshikuni, & H. Asahi. (1986). Long-wavelength optical modulation in multiple quantum wells. Surface Science. 174(1-3). 233–237. 1 indexed citations
18.
Kawaguchi, Yoshihiro, H. Asahi, & Haruo Nagai. (1984). MBE Growth of High-Quality InP Using Triethylindium as an Indium Source. Japanese Journal of Applied Physics. 23(9A). L737–L737. 16 indexed citations
19.
Asahi, H., Yuichi Kawamura, & Haruo Nagai. (1982). Molecular beam epitaxial growth of InGaAlP on (100) GaAs. Journal of Applied Physics. 53(7). 4928–4931. 50 indexed citations
20.
Asahi, H., et al.. (1981). Near Room Temperature CW Operation at 1.70 µm of MBE Grown InGaAs/InP DH Lasers. Japanese Journal of Applied Physics. 20(3). L187–L187. 15 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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