R.M. Dia

784 total citations
24 papers, 578 citations indexed

About

R.M. Dia is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, R.M. Dia has authored 24 papers receiving a total of 578 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 5 papers in Condensed Matter Physics. Recurrent topics in R.M. Dia's work include Radio Frequency Integrated Circuit Design (24 papers), Semiconductor Quantum Structures and Devices (22 papers) and GaN-based semiconductor devices and materials (5 papers). R.M. Dia is often cited by papers focused on Radio Frequency Integrated Circuit Design (24 papers), Semiconductor Quantum Structures and Devices (22 papers) and GaN-based semiconductor devices and materials (5 papers). R.M. Dia collaborates with scholars based in United States. R.M. Dia's co-authors include D.C. Streit, K.L. Tan, R. Lai, P.H. Liu, A.C. Han, H.C. Yen, J.R. Velebir, D.C.W. Lo, Geok Ing Ng and T. Block and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

R.M. Dia

24 papers receiving 507 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
R.M. Dia United States	14	560	359	111	80	31	24	578
J.R. Velebir United States	15	494 0.9×	330 0.9×	78 0.7×	54 0.7×	52 1.7×	35	514
A.A. Jabra United States	8	446 0.8×	326 0.9×	63 0.6×	27 0.3×	18 0.6×	17	467
Shou‐Hsien Weng Taiwan	12	392 0.7×	162 0.5×	63 0.6×	40 0.5×	59 1.9×	40	433
R. Bosch Germany	9	596 1.1×	203 0.6×	159 1.4×	30 0.4×	57 1.8×	21	633
Fabian Thome Germany	16	578 1.0×	162 0.5×	190 1.7×	106 1.3×	32 1.0×	65	624
D.K. Umemoto United States	14	601 1.1×	281 0.8×	99 0.9×	19 0.2×	127 4.1×	51	618
L.M. Jelloian United States	10	681 1.2×	526 1.5×	81 0.7×	25 0.3×	49 1.6×	25	713
M. Biedenbender United States	14	395 0.7×	126 0.4×	100 0.9×	46 0.6×	29 0.9×	40	408
A.C. Han United States	10	293 0.5×	216 0.6×	52 0.5×	26 0.3×	15 0.5×	16	304
P.D. Chow United States	11	245 0.4×	103 0.3×	52 0.5×	50 0.6×	16 0.5×	30	255

Countries citing papers authored by R.M. Dia

Since Specialization

Citations

This map shows the geographic impact of R.M. Dia's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.M. Dia with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.M. Dia more than expected).

Fields of papers citing papers by R.M. Dia

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.M. Dia. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.M. Dia. The network helps show where R.M. Dia may publish in the future.

Co-authorship network of co-authors of R.M. Dia

This figure shows the co-authorship network connecting the top 25 collaborators of R.M. Dia. A scholar is included among the top collaborators of R.M. Dia based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.M. Dia. R.M. Dia is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Smorchkova, Ioulia, M. Wójtowicz, Rajinder Sandhu, et al.. (2003). AlGaN/GaN HEMTs---operation in the K-band and above. IEEE Transactions on Microwave Theory and Techniques. 51(2). 665–668. 26 indexed citations

Smorchkova, Ioulia, M. Wójtowicz, R. Tsai, et al.. (2003). AlGaN/GaN HEMT high-power and low-noise performance at f≥20 GHz. 422–427. 5 indexed citations

Aust, M., K. Nakano, G.S. Dow, et al.. (2003). A Q-band monolithic three-stage amplifier. 91–94. 8 indexed citations

Pospieszalski, M.W., R. Lai, K.L. Tan, et al.. (2002). Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs. 515–518. 33 indexed citations

Ng, Geok Ing, R. Lai, H. Wang, et al.. (2002). A fully passivated ultra low noise W-band monolithic InGaAs/InAlAs/InP HEMT amplifier. 63–66. 10 indexed citations

Lai, R., H.C. Yen, D.C. Streit, et al.. (2002). Optimization of InGaAs/InAlAs/InP HEMT gate recess process for high frequency and high power applications. 509–512. 7 indexed citations

Tan, K.L., D.C. Streit, P.D. Chow, et al.. (2002). 140 GHz 0.1 mu m gate-length pseudomorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.60/Ga/sub 0.40/As/InP HEMT. 239–242. 10 indexed citations

Grundbacher, R., R. Lai, R. Tsai, et al.. (2002). 0.1 μm enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT. 34. 180–183. 1 indexed citations

Lai, R., Eric W. Lin, T. Block, et al.. (1997). A 94-GHz 130-mW InGaAs/InAlAs/InP HEMT high-power MMIC amplifier. IEEE Microwave and Guided Wave Letters. 7(5). 133–135. 12 indexed citations

10.

Wang, H., Geok Ing Ng, R. Lai, et al.. (1996). Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers. IEE Proceedings - Microwaves Antennas and Propagation. 143(5). 361–361. 23 indexed citations

11.

Wang, H., R. Lai, D.C.W. Lo, et al.. (1995). A 140-GHz monolithic low noise amplifier. IEEE Microwave and Guided Wave Letters. 5(5). 150–152. 46 indexed citations

12.

Wójtowicz, M., R. Lai, D.C. Streit, et al.. (1994). 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/. IEEE Electron Device Letters. 15(11). 477–479. 70 indexed citations

13.

Lai, R., K.L. Tan, Geok Ing Ng, et al.. (1994). An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiver. IEEE Microwave and Guided Wave Letters. 4(10). 329–331. 10 indexed citations

14.

Lo, D.C.W., R. Lai, H. Wang, et al.. (1993). A high-performance monolithic Q-band InP-based HEMT low-noise amplifier. IEEE Microwave and Guided Wave Letters. 3(9). 299–301. 25 indexed citations

15.

Lai, R., K.W. Chang, K. H. Tan, et al.. (1993). A high performance and low DC power V-band MMIC LNA using 0.1 mu m InGaAs/InAlAs/InP HEMT technology. IEEE Microwave and Guided Wave Letters. 3(12). 447–449. 27 indexed citations

16.

Streit, D.C., K.L. Tan, R.M. Dia, et al.. (1991). High-gain W band pseudomorphic InGaAs power HEMTs. IEEE Electron Device Letters. 12(4). 149–150. 46 indexed citations

17.

Tan, K.L., et al.. (1991). High-power V-band pseudomorphic InGaAs HEMT. IEEE Electron Device Letters. 12(5). 213–214. 45 indexed citations

18.

Streit, D.C., K.L. Tan, R.M. Dia, et al.. (1991). High performance W-band InAlAs-InGaAs-InP HEMTs. Electronics Letters. 27(13). 1149–1150. 16 indexed citations

19.

Tan, K.L., R.M. Dia, D.C. Streit, et al.. (1990). Ultralow-noise W-band pseudomorphic InGaAs HEMT's. IEEE Electron Device Letters. 11(7). 303–305. 25 indexed citations

20.

Tan, K.L., R.M. Dia, D.C. Streit, et al.. (1990). 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs. IEEE Electron Device Letters. 11(12). 585–587. 71 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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