R. Lai

1.6k total citations
37 papers, 579 citations indexed

About

R. Lai is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Astronomy and Astrophysics. According to data from OpenAlex, R. Lai has authored 37 papers receiving a total of 579 indexed citations (citations by other indexed papers that have themselves been cited), including 35 papers in Electrical and Electronic Engineering, 17 papers in Atomic and Molecular Physics, and Optics and 10 papers in Astronomy and Astrophysics. Recurrent topics in R. Lai's work include Radio Frequency Integrated Circuit Design (22 papers), Semiconductor Quantum Structures and Devices (13 papers) and Superconducting and THz Device Technology (10 papers). R. Lai is often cited by papers focused on Radio Frequency Integrated Circuit Design (22 papers), Semiconductor Quantum Structures and Devices (13 papers) and Superconducting and THz Device Technology (10 papers). R. Lai collaborates with scholars based in United States and Australia. R. Lai's co-authors include W.R. Deal, V. Radisic, X. B. Mei, Wayne Yoshida, J. Lee, T. Gaier, Lorene Samoska, A. Fung, J. Uyeda and P.H. Liu and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and IEEE Microwave and Wireless Components Letters.

In The Last Decade

R. Lai

33 papers receiving 550 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Lai United States 12 535 230 158 76 31 37 579
P.H. Liu United States 15 598 1.1× 290 1.3× 164 1.0× 73 1.0× 33 1.1× 29 632
M. Nishimoto United States 14 460 0.9× 214 0.9× 95 0.6× 59 0.8× 26 0.8× 52 501
M. Lui United States 15 422 0.8× 241 1.0× 96 0.6× 74 1.0× 40 1.3× 47 511
R. Lin United States 11 299 0.6× 76 0.3× 115 0.7× 65 0.9× 29 0.9× 37 335
Petra Rowell United States 20 1.0k 1.9× 269 1.2× 146 0.9× 129 1.7× 50 1.6× 63 1.0k
A. Madjar Israel 16 536 1.0× 199 0.9× 113 0.7× 35 0.5× 61 2.0× 87 671
Matvey Finkel Russia 11 177 0.3× 125 0.5× 169 1.1× 124 1.6× 47 1.5× 39 355
Charlotte Tripon‐Canseliet France 10 331 0.6× 93 0.4× 223 1.4× 28 0.4× 22 0.7× 37 405
A. W. Lichtenberger United States 13 278 0.5× 59 0.3× 304 1.9× 83 1.1× 36 1.2× 36 389
H.C. Yen United States 16 649 1.2× 339 1.5× 61 0.4× 146 1.9× 41 1.3× 58 682

Countries citing papers authored by R. Lai

Since Specialization
Citations

This map shows the geographic impact of R. Lai's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Lai with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Lai more than expected).

Fields of papers citing papers by R. Lai

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Lai. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Lai. The network helps show where R. Lai may publish in the future.

Co-authorship network of co-authors of R. Lai

This figure shows the co-authorship network connecting the top 25 collaborators of R. Lai. A scholar is included among the top collaborators of R. Lai based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Lai. R. Lai is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lan, Xing, et al.. (2017). Direct On-Chip 3-D Aerosol Jet Printing With High Reliability. IEEE Transactions on Components Packaging and Manufacturing Technology. 7(8). 1369–1376. 18 indexed citations
2.
Mei, X. B., Wayne Yoshida, Zeyang Zhou, et al.. (2015). (Invited) 25nm InP HEMT TMIC Process with 1 THz Amplifier Circuit Gain. 1 indexed citations
3.
Reeves, R., Kieran Cleary, J. Kooi, et al.. (2014). A W-band heterodyne receiver module prototype for focal plane arrays. 1–4. 3 indexed citations
4.
Chakravarty, S., et al.. (2012). Silicon evaluation of faster than at-speed transition delay tests. 80–85. 7 indexed citations
5.
Radisic, V., K.M.K.H. Leong, X. B. Mei, et al.. (2010). A 50 mW 220 GHz power amplifier module. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 16 indexed citations
6.
Mei, X. B., Y.C. Chou, Jun-Yao Yang, et al.. (2009). Sub-mW Operation of InP HEMT X-Band Low-Noise Amplifiers for Low Power Applications. 1–4. 10 indexed citations
7.
Lai, R., X. B. Mei, W.R. Deal, et al.. (2007). Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz. 609–611. 193 indexed citations
8.
9.
Mei, X. B., Wayne Yoshida, W.R. Deal, et al.. (2007). 35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications. 59–62. 11 indexed citations
10.
Zeng, Xiangfeng, et al.. (2006). The Reliability Study of MIM Capacitor Built On Top of Backside Via In III-V Compound MMIC. 1 indexed citations
11.
Deal, W.R., P.H. Liu, C. Namba, et al.. (2006). Broadband Dual-Gate Balanced Low Noise Amplifiers. 169–172. 2 indexed citations
12.
Chou, Y.C., D. Leung, R. Grundbacher, et al.. (2004). The Effect of Gate Metal Interdiffusion on Reliability Performance in GaAs PHEMTs. IEEE Electron Device Letters. 25(6). 351–353. 11 indexed citations
13.
14.
Grundbacher, R., R. Lai, M. Barsky, et al.. (2003). 0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band. CaltechAUTHORS (California Institute of Technology). 455–458. 31 indexed citations
15.
Leung, D., et al.. (2003). Reliability testing of 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiers. 87–88. 2 indexed citations
16.
Raghavan, A., et al.. (2002). Temperature-dependent noise parameters and modeling of InP/InAlAs/InGaAs HEMTs. 2. 1241–1244. 6 indexed citations
17.
Lai, R., et al.. (2002). Cryogenic, X-band and Ka-band InP HEMT based LNAs for the Deep Space Network. 2. 2/829–2/842. 24 indexed citations
18.
Archer, J.W., R. Lai, & R. G. Gough. (2001). Ultra-low-noise indium-phosphide MMIC amplifiers for 85-115 GHz. IEEE Transactions on Microwave Theory and Techniques. 49(11). 2080–2085. 12 indexed citations
19.
Laskar, J., S. Nuttinck, Seunghyup Yoo, et al.. (2000). Temperature-dependent small-signal and noise parameter measurements and modeling on InP HEMTs. IEEE Transactions on Microwave Theory and Techniques. 48(12). 2579–2587. 29 indexed citations
20.
Mehdi, Imran, et al.. (1998). A W-Band HEMT Based Power Amplifier Module for Millimeter-Wave LO Multipliers. 573. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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