R. Zeisel

1.1k total citations
32 papers, 671 citations indexed

About

R. Zeisel is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Zeisel has authored 32 papers receiving a total of 671 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 14 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Zeisel's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (19 papers) and Semiconductor Quantum Structures and Devices (11 papers). R. Zeisel is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (19 papers) and Semiconductor Quantum Structures and Devices (11 papers). R. Zeisel collaborates with scholars based in Germany, Italy and France. R. Zeisel's co-authors include M. Stutzmann, Christoph E. Nebel, Bastian Galler, Martin S. Brandt, Sebastian T. B. Goennenwein, O. Ambacher, M. W. Bayerl, Michael Binder, R. Dimitrov and J. Wagner and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

R. Zeisel

31 papers receiving 636 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Zeisel Germany 15 481 332 274 246 198 32 671
J. A. Freitas United States 13 795 1.7× 362 1.1× 437 1.6× 267 1.1× 449 2.3× 25 909
J. A. Wolk United States 11 189 0.4× 377 1.1× 258 0.9× 338 1.4× 93 0.5× 22 593
M. Sirena Argentina 16 353 0.7× 165 0.5× 320 1.2× 133 0.5× 351 1.8× 86 691
T. Yamamoto Japan 16 252 0.5× 227 0.7× 335 1.2× 138 0.6× 171 0.9× 30 636
Byeongwon Kang South Korea 16 787 1.6× 124 0.4× 385 1.4× 145 0.6× 354 1.8× 82 933
H. K. Wong United States 16 407 0.8× 150 0.5× 254 0.9× 315 1.3× 390 2.0× 33 752
Y. S. Gou Taiwan 15 374 0.8× 180 0.5× 276 1.0× 155 0.6× 257 1.3× 94 637
P. Bauer Germany 8 201 0.4× 139 0.4× 148 0.5× 173 0.7× 138 0.7× 13 457
Shiro Takeno Japan 12 194 0.4× 183 0.6× 229 0.8× 94 0.4× 147 0.7× 46 516
L. Dmowski Poland 15 322 0.7× 392 1.2× 256 0.9× 600 2.4× 182 0.9× 82 853

Countries citing papers authored by R. Zeisel

Since Specialization
Citations

This map shows the geographic impact of R. Zeisel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Zeisel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Zeisel more than expected).

Fields of papers citing papers by R. Zeisel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Zeisel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Zeisel. The network helps show where R. Zeisel may publish in the future.

Co-authorship network of co-authors of R. Zeisel

This figure shows the co-authorship network connecting the top 25 collaborators of R. Zeisel. A scholar is included among the top collaborators of R. Zeisel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Zeisel. R. Zeisel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Nippert, Felix, Marc P. Hoffmann, Hans‐Jürgen Lugauer, et al.. (2020). Strongly localized carriers in Al-rich AlGaN/AlN single quantum wells grown on sapphire substrates. Journal of Applied Physics. 127(9). 10 indexed citations
2.
Nippert, Felix, Matthew Davies, Martin Mandl, et al.. (2020). Point Defect‐Induced UV‐C Absorption in Aluminum Nitride Epitaxial Layers Grown on Sapphire Substrates by Metal‐Organic Chemical Vapor Deposition. physica status solidi (b). 257(12). 17 indexed citations
3.
Nippert, Felix, Marc P. Hoffmann, Hans‐Jürgen Lugauer, et al.. (2020). Carrier Dynamics in Al‐Rich AlGaN/AlN Quantum Well Structures Governed by Carrier Localization. physica status solidi (b). 257(12). 10 indexed citations
4.
Jacopin, Gwénolé, Matthew Davies, Georg Rossbach, et al.. (2020). Influence of the Growth Substrate on the Internal Quantum Efficiency of AlGaN/AlN Multiple Quantum Wells Governed by Carrier Localization. physica status solidi (b). 258(4). 1 indexed citations
5.
Zoellner, Marvin Hartwig, Gilbert Chahine, Lise Lahourcade, et al.. (2019). Correlation of Optical, Structural, and Compositional Properties with V-Pit Distribution in InGaN/GaN Multiquantum Wells. ACS Applied Materials & Interfaces. 11(25). 22834–22839. 12 indexed citations
6.
Zeisel, R., et al.. (2017). Characterization and prevention of humidity related degradation of atomic layer deposited Al2O3. Journal of Applied Physics. 121(2). 21 indexed citations
7.
Santi, Carlo De, Matteo Meneghini, Nicola Trivellin, et al.. (2016). Thermal droop in InGaN-based LEDs: physical origin and dependence on material properties. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9768. 97680D–97680D. 4 indexed citations
8.
Mandl, Martin, et al.. (2016). Analysis and in situ observation of humidity dependent atomic layer deposited-Al2O3 degradation. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 35(1). 2 indexed citations
9.
Santi, Carlo De, Matteo Meneghini, Bastian Galler, et al.. (2016). Role of defects in the thermal droop of InGaN-based light emitting diodes. Journal of Applied Physics. 119(9). 51 indexed citations
10.
Binder, Michael, Ines Pietzonka, Hans‐Jürgen Lugauer, et al.. (2016). Towards quantification of the crucial impact of auger recombination for the efficiency droop in (AlInGa)N quantum well structures. Optics Express. 24(3). 2971–2971. 9 indexed citations
11.
Meneghini, Matteo, Bastian Galler, R. Zeisel, et al.. (2014). Characterization of the deep levels responsible for non-radiative recombination in InGaN/GaN light-emitting diodes. Applied Physics Letters. 104(11). 51 indexed citations
12.
13.
Binder, Michael, G. Brüderl, Christoph Eichler, et al.. (2013). Carrier transport in green AlInGaN based structures on c-plane substrates. Applied Physics Letters. 102(23). 14 indexed citations
14.
15.
Brandt, Martin S., et al.. (2002). DX behaviour of Si donors in AlGaN alloys. physica status solidi (b). 235(1). 13–19. 11 indexed citations
16.
Nebel, Christoph E., R. Zeisel, & M. Stutzmann. (2001). Space charge spectroscopy of diamond. Diamond and Related Materials. 10(3-7). 639–644. 5 indexed citations
17.
Goennenwein, Sebastian T. B., et al.. (2001). Defect-related noise in AlN and AlGaN alloys. Physica B Condensed Matter. 308-310. 69–72. 4 indexed citations
18.
Goennenwein, Sebastian T. B., et al.. (2001). Generation–recombination noise of DX centers in AlN:Si. Applied Physics Letters. 79(15). 2396–2398. 18 indexed citations
19.
Zeisel, R., Christoph E. Nebel, M. Stutzmann, et al.. (2000). Photoconductivity Study of Li Doped Homoepitaxially Grown CVD Diamond. physica status solidi (a). 181(1). 45–50. 17 indexed citations
20.
Zeisel, R., M. W. Bayerl, Sebastian T. B. Goennenwein, et al.. (2000). DX-behavior of Si in AlN. Physical review. B, Condensed matter. 61(24). R16283–R16286. 114 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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