L. Nevou

1.9k total citations
55 papers, 1.5k citations indexed

About

L. Nevou is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, L. Nevou has authored 55 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 38 papers in Condensed Matter Physics and 17 papers in Electrical and Electronic Engineering. Recurrent topics in L. Nevou's work include Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (38 papers) and Spectroscopy and Laser Applications (15 papers). L. Nevou is often cited by papers focused on Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (38 papers) and Spectroscopy and Laser Applications (15 papers). L. Nevou collaborates with scholars based in France, Switzerland and Germany. L. Nevou's co-authors include F. H. Julien, Maria Tchernycheva, E. Monroy, F. Guillot, L. Doyennette, T. Remmele, M. Albrecht, Jérôme Faist, E. Bellet‐Amalric and Mattias Beck and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. Nevou

54 papers receiving 1.4k citations

Peers

Countries citing papers authored by L. Nevou

Since Specialization

Citations

This map shows the geographic impact of L. Nevou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Nevou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Nevou more than expected).

Fields of papers citing papers by L. Nevou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Nevou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Nevou. The network helps show where L. Nevou may publish in the future.

Co-authorship network of co-authors of L. Nevou

This figure shows the co-authorship network connecting the top 25 collaborators of L. Nevou. A scholar is included among the top collaborators of L. Nevou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Nevou. L. Nevou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Title	Journal	Authors	Indexed citations
1	Ultrastrong Coupling Regime and Plasmon Polaritons in Parabolic Semiconductor Quantum Wells	Physical Review Letters	Markus Geiser, Fabrizio Castellano et al.	155
2	Current quantization in an optically driven electron pump based on self-assembled quantum dots	Nature Physics	L. Nevou, V. Liverini et al.	11
3	InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infrared	Journal of Crystal Growth	V. Liverini, A. Bismuto et al.	5
4	GaN/AlGaN nanostructures for intersubband optoelectronics	physica status solidi (a)	Maria Tchernycheva, L. Nevou et al.	3
5	Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m	IEEE Photonics Technology Letters	S. Valdueza‐Felip, F. B. Naranjo et al.	13
6	GaN/AlN free‐standing nanowires grown by molecular beam epitaxy	Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics	Maria Tchernycheva, Corinne Sartel et al.	13
7	GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance	Journal of Applied Physics	P. Kandaswamy, F. Guillot et al.	151
8	Strain-induced interface instability in GaN∕AlN multiple quantum wells	Applied Physics Letters	Sylvain Nicolay, E. Feltin et al.	31
9	Nitride intersubband devices: prospects and recent developments	physica status solidi (a)	F. H. Julien, Maria Tchernycheva et al.	8
10	Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots	physica status solidi (b)	L. Doyennette, Alon Vardi et al.	1
11	Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm	Acta Physica Polonica A	G. Cywiński, C. Skierbiszewski et al.	2
12	Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths	Journal of Applied Physics	F. Guillot, E. Bellet‐Amalric et al.	58
13	Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells	physica status solidi (b)	Maria Tchernycheva, L. Nevou et al.	8
14	III-Nitride Nanostructures for Infrared Optoelectronics	Acta Physica Polonica A	E. Monroy, F. Guillot et al.	3
15	Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions	Applied Physics Letters	Sylvain Nicolay, E. Feltin et al.	44
16	Electron confinement in strongly coupled GaN∕AlN quantum wells	Applied Physics Letters	Maria Tchernycheva, L. Nevou et al.	45
17	MBE growth of nitride-based photovoltaic intersubband detectors	Superlattices and Microstructures	E. Monroy, F. Guillot et al.	7
18	GaN/AlN quantum dot photodetectors at 1.3–1.5 μm	Superlattices and Microstructures	L. Doyennette, Alon Vardi et al.	6
19	Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths	physica status solidi (a)	F. Guillot, Maria Tchernycheva et al.	1
20	GaN-based quantum dot infrared photodetector operating at 1.38 µm	Electronics Letters	L. Doyennette, L. Nevou et al.	32

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact