L. Nevou

1.9k total citations
55 papers, 1.5k citations indexed

About

L. Nevou is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics and Electrical and Electronic Engineering. According to data from OpenAlex, L. Nevou has authored 55 papers receiving a total of 1.5k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 38 papers in Condensed Matter Physics and 17 papers in Electrical and Electronic Engineering. Recurrent topics in L. Nevou's work include Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (38 papers) and Spectroscopy and Laser Applications (15 papers). L. Nevou is often cited by papers focused on Semiconductor Quantum Structures and Devices (45 papers), GaN-based semiconductor devices and materials (38 papers) and Spectroscopy and Laser Applications (15 papers). L. Nevou collaborates with scholars based in France, Switzerland and Germany. L. Nevou's co-authors include F. H. Julien, Maria Tchernycheva, E. Monroy, F. Guillot, L. Doyennette, T. Remmele, M. Albrecht, Jérôme Faist, E. Bellet‐Amalric and Mattias Beck and has published in prestigious journals such as Physical Review Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

L. Nevou

54 papers receiving 1.4k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Nevou France 20 1.1k 1.0k 383 376 362 55 1.5k
S. Haffouz Canada 22 620 0.6× 999 1.0× 758 2.0× 201 0.5× 531 1.5× 66 1.5k
F. Guillot France 19 953 0.9× 1.1k 1.0× 330 0.9× 260 0.7× 309 0.9× 44 1.3k
Mark Teepe United States 17 510 0.5× 725 0.7× 389 1.0× 222 0.6× 279 0.8× 55 966
Hock M. Ng United States 11 629 0.6× 1.1k 1.0× 565 1.5× 206 0.5× 437 1.2× 14 1.4k
L. Wendler Germany 22 1.5k 1.4× 250 0.2× 597 1.6× 376 1.0× 71 0.2× 84 1.7k
M. J. Yang United States 24 1.7k 1.6× 237 0.2× 1.5k 3.9× 171 0.5× 92 0.3× 71 2.1k
S. Schmult Germany 17 676 0.6× 444 0.4× 291 0.8× 57 0.2× 148 0.4× 66 865
Norio Iizuka Japan 12 658 0.6× 485 0.5× 445 1.2× 141 0.4× 109 0.3× 29 864
P. S. Kop’ev Russia 18 1.3k 1.3× 291 0.3× 1.1k 2.9× 148 0.4× 146 0.4× 60 1.6k
G. L. Bir China 6 1.6k 1.5× 488 0.5× 1.0k 2.7× 284 0.8× 139 0.4× 13 2.0k

Countries citing papers authored by L. Nevou

Since Specialization
Citations

This map shows the geographic impact of L. Nevou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Nevou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Nevou more than expected).

Fields of papers citing papers by L. Nevou

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Nevou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Nevou. The network helps show where L. Nevou may publish in the future.

Co-authorship network of co-authors of L. Nevou

This figure shows the co-authorship network connecting the top 25 collaborators of L. Nevou. A scholar is included among the top collaborators of L. Nevou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Nevou. L. Nevou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Geiser, Markus, Fabrizio Castellano, Giacomo Scalari, et al.. (2012). Ultrastrong Coupling Regime and Plasmon Polaritons in Parabolic Semiconductor Quantum Wells. Physical Review Letters. 108(10). 106402–106402. 155 indexed citations
2.
Nevou, L., V. Liverini, Fabrizio Castellano, et al.. (2011). Current quantization in an optically driven electron pump based on self-assembled quantum dots. Nature Physics. 7(5). 423–427. 11 indexed citations
3.
Liverini, V., A. Bismuto, L. Nevou, et al.. (2010). InAs/AlInAs quantum-dash cascade structures with electroluminescence in the mid-infrared. Journal of Crystal Growth. 323(1). 491–495. 5 indexed citations
4.
Tchernycheva, Maria, L. Nevou, J. Mangeney, et al.. (2010). GaN/AlGaN nanostructures for intersubband optoelectronics. physica status solidi (a). 207(6). 1421–1424. 3 indexed citations
5.
Valdueza‐Felip, S., F. B. Naranjo, Miguel González‐Herráez, et al.. (2008). Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m. IEEE Photonics Technology Letters. 20(16). 1366–1368. 13 indexed citations
6.
Tchernycheva, Maria, Corinne Sartel, G. É. Cirlin, et al.. (2008). GaN/AlN free‐standing nanowires grown by molecular beam epitaxy. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 1556–1558. 13 indexed citations
7.
Kandaswamy, P., F. Guillot, E. Bellet‐Amalric, et al.. (2008). GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance. Journal of Applied Physics. 104(9). 151 indexed citations
8.
Nicolay, Sylvain, E. Feltin, J.‐F. Carlin, et al.. (2007). Strain-induced interface instability in GaN∕AlN multiple quantum wells. Applied Physics Letters. 91(6). 31 indexed citations
9.
Julien, F. H., Maria Tchernycheva, L. Nevou, et al.. (2007). Nitride intersubband devices: prospects and recent developments. physica status solidi (a). 204(6). 1987–1995. 8 indexed citations
10.
Doyennette, L., Alon Vardi, F. Guillot, et al.. (2006). Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots. physica status solidi (b). 243(15). 3993–3997. 1 indexed citations
11.
Cywiński, G., C. Skierbiszewski, Anna Feduniewicz‐Żmuda, et al.. (2006). Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm. Acta Physica Polonica A. 110(2). 175–181. 2 indexed citations
12.
Guillot, F., E. Bellet‐Amalric, E. Monroy, et al.. (2006). Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. Journal of Applied Physics. 100(4). 58 indexed citations
13.
Tchernycheva, Maria, L. Nevou, L. Doyennette, et al.. (2006). Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells. physica status solidi (b). 243(7). 1630–1633. 8 indexed citations
14.
Monroy, E., F. Guillot, E. Bellet‐Amalric, et al.. (2006). III-Nitride Nanostructures for Infrared Optoelectronics. Acta Physica Polonica A. 110(3). 295–301. 3 indexed citations
15.
Nicolay, Sylvain, E. Feltin, J.‐F. Carlin, et al.. (2006). Indium surfactant effect on AlN∕GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions. Applied Physics Letters. 88(15). 44 indexed citations
16.
Tchernycheva, Maria, L. Nevou, L. Doyennette, et al.. (2006). Electron confinement in strongly coupled GaN∕AlN quantum wells. Applied Physics Letters. 88(15). 45 indexed citations
17.
Monroy, E., F. Guillot, E. Bellet‐Amalric, et al.. (2006). MBE growth of nitride-based photovoltaic intersubband detectors. Superlattices and Microstructures. 40(4-6). 418–425. 7 indexed citations
18.
Doyennette, L., Alon Vardi, F. Guillot, et al.. (2006). GaN/AlN quantum dot photodetectors at 1.3–1.5  μm. Superlattices and Microstructures. 40(4-6). 262–267. 6 indexed citations
19.
Guillot, F., Maria Tchernycheva, L. Nevou, et al.. (2006). Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. physica status solidi (a). 203(7). 1754–1758. 1 indexed citations
20.
Doyennette, L., L. Nevou, Maria Tchernycheva, et al.. (2005). GaN-based quantum dot infrared photodetector operating at 1.38 µm. Electronics Letters. 41(19). 1077–1078. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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