F. Guillot

1.7k total citations
44 papers, 1.3k citations indexed

About

F. Guillot is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Spectroscopy. According to data from OpenAlex, F. Guillot has authored 44 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 39 papers in Condensed Matter Physics, 37 papers in Atomic and Molecular Physics, and Optics and 14 papers in Spectroscopy. Recurrent topics in F. Guillot's work include GaN-based semiconductor devices and materials (39 papers), Semiconductor Quantum Structures and Devices (36 papers) and Spectroscopy and Laser Applications (14 papers). F. Guillot is often cited by papers focused on GaN-based semiconductor devices and materials (39 papers), Semiconductor Quantum Structures and Devices (36 papers) and Spectroscopy and Laser Applications (14 papers). F. Guillot collaborates with scholars based in France, Switzerland and Germany. F. Guillot's co-authors include E. Monroy, F. H. Julien, Maria Tchernycheva, L. Nevou, L. Doyennette, E. Bellet‐Amalric, T. Remmele, M. Albrecht, Daniel Hofstetter and Fabrizio R. Giorgetta and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Physical Review B.

In The Last Decade

F. Guillot

42 papers receiving 1.3k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Guillot France 19 1.1k 953 330 309 292 44 1.3k
L. Nevou France 20 1.0k 1.0× 1.1k 1.1× 383 1.2× 362 1.2× 247 0.8× 55 1.5k
L. Doyennette France 14 476 0.4× 602 0.6× 490 1.5× 158 0.5× 203 0.7× 41 969
M. Lachab United Kingdom 21 708 0.7× 391 0.4× 718 2.2× 442 1.4× 337 1.2× 61 1.3k
S. Golka Austria 17 444 0.4× 394 0.4× 449 1.4× 185 0.6× 172 0.6× 45 778
S. Haffouz Canada 22 999 0.9× 620 0.7× 758 2.3× 531 1.7× 130 0.4× 66 1.5k
Hock M. Ng United States 11 1.1k 1.0× 629 0.7× 565 1.7× 437 1.4× 121 0.4× 14 1.4k
Brianna Klein United States 20 513 0.5× 425 0.4× 817 2.5× 344 1.1× 60 0.2× 68 1.1k
Alon Vardi United States 20 276 0.3× 372 0.4× 719 2.2× 99 0.3× 121 0.4× 52 1.0k
A. Matulionis Lithuania 22 1.0k 0.9× 884 0.9× 903 2.7× 323 1.0× 32 0.1× 133 1.5k
Mark A. Wistey United States 31 754 0.7× 1.7k 1.8× 2.3k 7.0× 142 0.5× 69 0.2× 127 2.6k

Countries citing papers authored by F. Guillot

Since Specialization
Citations

This map shows the geographic impact of F. Guillot's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Guillot with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Guillot more than expected).

Fields of papers citing papers by F. Guillot

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Guillot. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Guillot. The network helps show where F. Guillot may publish in the future.

Co-authorship network of co-authors of F. Guillot

This figure shows the co-authorship network connecting the top 25 collaborators of F. Guillot. A scholar is included among the top collaborators of F. Guillot based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Guillot. F. Guillot is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Roussignol, Ph., Christophe Voisin, Guillaume Cassabois, et al.. (2010). Homogeneous linewidth of the intraband transition at 1.55 μm in GaN/AlN quantum dots. Applied Physics Letters. 97(6). 5 indexed citations
2.
Nevou, L., J. Mangeney, Maria Tchernycheva, et al.. (2009). Ultrafast relaxation and optical saturation of intraband absorption of GaN/AlN quantum dots. Applied Physics Letters. 94(13). 14 indexed citations
3.
Valdueza‐Felip, S., F. B. Naranjo, Miguel González‐Herráez, et al.. (2008). Characterization of the Resonant Third-Order Nonlinear Susceptibility of Si-Doped GaN–AlN Quantum Wells and Quantum Dots at 1.5 $\mu$m. IEEE Photonics Technology Letters. 20(16). 1366–1368. 13 indexed citations
4.
Vardi, Alon, G. Bahir, F. Guillot, et al.. (2008). Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures. Applied Physics Letters. 92(1). 96 indexed citations
5.
Julien, F. H., et al.. (2008). Near‐infrared intersubband emission from GaN/AlN quantum dots and quantum wells. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 5(6). 2120–2122. 4 indexed citations
6.
Kandaswamy, P., F. Guillot, E. Bellet‐Amalric, et al.. (2008). GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance. Journal of Applied Physics. 104(9). 151 indexed citations
7.
Hofstetter, Daniel, et al.. (2007). Optically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structures. Applied Physics Letters. 91(13). 33 indexed citations
8.
Julien, F. H., Maria Tchernycheva, L. Nevou, et al.. (2007). Nitride intersubband devices: prospects and recent developments. physica status solidi (a). 204(6). 1987–1995. 8 indexed citations
9.
Doyennette, L., Alon Vardi, F. Guillot, et al.. (2006). Intraband photodetection at 1.3–1.5 µm in self‐organized GaN/AlN quantum dots. physica status solidi (b). 243(15). 3993–3997. 1 indexed citations
10.
Guillot, F., E. Bellet‐Amalric, E. Monroy, et al.. (2006). Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. Journal of Applied Physics. 100(4). 58 indexed citations
11.
Tchernycheva, Maria, L. Nevou, L. Doyennette, et al.. (2006). Optical and theoretical study of strong electron coupling in double GaN/AlN quantum wells. physica status solidi (b). 243(7). 1630–1633. 8 indexed citations
12.
Monroy, E., F. Guillot, E. Bellet‐Amalric, et al.. (2006). III-Nitride Nanostructures for Infrared Optoelectronics. Acta Physica Polonica A. 110(3). 295–301. 3 indexed citations
13.
Tchernycheva, Maria, L. Nevou, L. Doyennette, et al.. (2006). Electron confinement in strongly coupled GaN∕AlN quantum wells. Applied Physics Letters. 88(15). 45 indexed citations
14.
Monroy, E., F. Guillot, E. Bellet‐Amalric, et al.. (2006). MBE growth of nitride-based photovoltaic intersubband detectors. Superlattices and Microstructures. 40(4-6). 418–425. 7 indexed citations
15.
Hofstetter, Daniel, Esther Baumann, Fabrizio R. Giorgetta, et al.. (2006). High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors. Applied Physics Letters. 88(12). 49 indexed citations
16.
Doyennette, L., Alon Vardi, F. Guillot, et al.. (2006). GaN/AlN quantum dot photodetectors at 1.3–1.5  μm. Superlattices and Microstructures. 40(4-6). 262–267. 6 indexed citations
17.
Guillot, F., Maria Tchernycheva, L. Nevou, et al.. (2006). Si‐doped GaN/AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths. physica status solidi (a). 203(7). 1754–1758. 1 indexed citations
18.
Tchernycheva, Maria, L. Nevou, L. Doyennette, et al.. (2006). Systematic experimental and theoretical investigation of intersubband absorption inGaN∕AlNquantum wells. Physical Review B. 73(12). 213 indexed citations
19.
Nevou, L., Maria Tchernycheva, L. Doyennette, et al.. (2006). New developments for nitride unipolar devices at 1.3–1.5  μm wavelengths. Superlattices and Microstructures. 40(4-6). 412–417. 7 indexed citations
20.
Doyennette, L., L. Nevou, Maria Tchernycheva, et al.. (2005). GaN-based quantum dot infrared photodetector operating at 1.38 µm. Electronics Letters. 41(19). 1077–1078. 32 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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