T. D. Lin

1.1k total citations
37 papers, 927 citations indexed

About

T. D. Lin is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, T. D. Lin has authored 37 papers receiving a total of 927 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 16 papers in Materials Chemistry and 14 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in T. D. Lin's work include Semiconductor materials and devices (36 papers), Ga2O3 and related materials (14 papers) and Electronic and Structural Properties of Oxides (14 papers). T. D. Lin is often cited by papers focused on Semiconductor materials and devices (36 papers), Ga2O3 and related materials (14 papers) and Electronic and Structural Properties of Oxides (14 papers). T. D. Lin collaborates with scholars based in Taiwan, United States and Belgium. T. D. Lin's co-authors include J. Kwo, M. Hong, Mao Lin Huang, Yu‐Cheng Chang, H. C. Chiu, T. B. Wu, Pei-Ching Chang, Yen‐Chung Chang, Wilman Tsai and Y. C. Chang and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

T. D. Lin

37 papers receiving 909 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. D. Lin Taiwan 16 860 439 283 172 89 37 927
Arif Sonnet United States 11 884 1.0× 440 1.0× 353 1.2× 97 0.6× 95 1.1× 17 945
W. J. Ooms United States 15 823 1.0× 744 1.7× 226 0.8× 125 0.7× 45 0.5× 22 989
Ch. Dieker Germany 15 699 0.8× 427 1.0× 475 1.7× 87 0.5× 47 0.5× 39 890
J. Ramdani United States 16 1.0k 1.2× 940 2.1× 230 0.8× 218 1.3× 71 0.8× 43 1.3k
G. Vellianitis Belgium 22 1.1k 1.2× 510 1.2× 253 0.9× 121 0.7× 34 0.4× 53 1.2k
A. Verna Italy 13 211 0.2× 332 0.8× 218 0.8× 149 0.9× 65 0.7× 44 503
Ragesh Puthenkovilakam United States 11 687 0.8× 381 0.9× 119 0.4× 77 0.4× 24 0.3× 13 763
Y. J. Lee Taiwan 14 556 0.6× 362 0.8× 171 0.6× 167 1.0× 86 1.0× 28 667
Katsunori Makihara Japan 12 496 0.6× 338 0.8× 219 0.8× 75 0.4× 70 0.8× 130 615
Philippe Schieffer France 15 195 0.2× 356 0.8× 492 1.7× 234 1.4× 122 1.4× 55 711

Countries citing papers authored by T. D. Lin

Since Specialization
Citations

This map shows the geographic impact of T. D. Lin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. D. Lin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. D. Lin more than expected).

Fields of papers citing papers by T. D. Lin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. D. Lin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. D. Lin. The network helps show where T. D. Lin may publish in the future.

Co-authorship network of co-authors of T. D. Lin

This figure shows the co-authorship network connecting the top 25 collaborators of T. D. Lin. A scholar is included among the top collaborators of T. D. Lin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. D. Lin. T. D. Lin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Fu, Chun-Min, Y.H. Lin, T. D. Lin, et al.. (2015). Self-aligned inversion-channel n-InGaAs, p-GaSb, and p-Ge MOSFETs with a common high κ gate dielectric using a CMOS compatible process. Microelectronic Engineering. 147. 330–334. 14 indexed citations
2.
Geng, Huijuan, T. D. Lin, H. L. Hwang, et al.. (2014). Advanced passivation techniques for Si solar cells with high-κ dielectric materials. Applied Physics Letters. 105(12). 16 indexed citations
3.
Lin, T. D., Wen-Hsin Chang, Y. C. Chang, et al.. (2013). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2. Applied Physics Letters. 103(25). 25 indexed citations
4.
Chang, Wen-Hsin, et al.. (2012). Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 30(2). 9 indexed citations
5.
Lin, Chao‐An, H. Y. Lin, M. L. Huang, et al.. (2012). Effective passivation of In0.2Ga0.8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition. Applied Physics Letters. 101(17). 29 indexed citations
6.
Pi, T.-W., Wen‐Chung Lee, M. L. Huang, et al.. (2011). Electronic structures of Ga2O3(Gd2O3) gate dielectric on n-Ge(001) as grown and after CF4 plasma treatment: A synchrotron-radiation photoemission study. Journal of Applied Physics. 109(6). 3 indexed citations
7.
Chiu, H. C., T. D. Lin, Wen-Hsin Chang, et al.. (2011). Publisher’s Note: “Attainment of low interfacial trap density absent of a large midgap peak in In0.2Ga0.8As by Ga2O3 (Gd2O3) passivation” [Appl. Phys. Lett. 98, 062108 (2011)]. Applied Physics Letters. 98(10). 109901–109901. 3 indexed citations
8.
Lin, T. D., Li‐Kang Chu, Mao Lin Huang, et al.. (2010). High-quality molecular-beam-epitaxy-grown Ga2O3(Gd2O3) on Ge (100): Electrical and chemical characterizations. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 28(3). C3A1–C3A4. 8 indexed citations
9.
10.
Chu, Li‐Kang, T. D. Lin, Chao‐An Lin, et al.. (2010). Effective passivation and high-performance metal–oxide–semiconductor devices using ultra-high-vacuum deposited high-κ dielectrics on Ge without interfacial layers. Solid-State Electronics. 54(9). 965–971. 23 indexed citations
11.
Chang, Pei-Ching, et al.. (2010). MBE—Enabling technology beyond Si CMOS. Journal of Crystal Growth. 323(1). 511–517. 6 indexed citations
12.
13.
Huang, Mao Lin, et al.. (2009). Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1−xAs. Applied Physics Letters. 94(5). 62 indexed citations
14.
Hong, M., J. Kwo, T. D. Lin, & Mao Lin Huang. (2009). InGaAs Metal Oxide Semiconductor Devices with Ga2O3(Gd2O3) High-κ Dielectrics for Science and Technology beyond Si CMOS. MRS Bulletin. 34(7). 514–521. 32 indexed citations
15.
Lin, T. D., et al.. (2008). Atomic-layer-deposited HfO$_{2}$ on In$_{0.53}$Ga$_{0.47}$As -- passivation and energy-band parameters. Bulletin of the American Physical Society. 1 indexed citations
16.
Chang, Y. C., Mao Lin Huang, T. D. Lin, et al.. (2008). Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters. Applied Physics Letters. 92(7). 95 indexed citations
17.
18.
Lin, T. D., H. C. Chiu, Pei-Ching Chang, et al.. (2008). High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics. Applied Physics Letters. 93(3). 103 indexed citations
19.
Tsai, Wilman, T. D. Lin, Y. J. Lee, et al.. (2007). Ga 2 O 3 ( Gd 2 O 3 ) ∕ Si 3 N 4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion. Applied Physics Letters. 91(22). 27 indexed citations
20.
Chang, Yu‐Cheng, et al.. (2006). Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters. 89(24). 101 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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