P. Rossel

736 total citations
81 papers, 550 citations indexed

About

P. Rossel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, P. Rossel has authored 81 papers receiving a total of 550 indexed citations (citations by other indexed papers that have themselves been cited), including 73 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in P. Rossel's work include Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (40 papers) and Silicon Carbide Semiconductor Technologies (36 papers). P. Rossel is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (43 papers), Semiconductor materials and devices (40 papers) and Silicon Carbide Semiconductor Technologies (36 papers). P. Rossel collaborates with scholars based in France, United States and Switzerland. P. Rossel's co-authors include G. Charitat, J. Graffeuil, A. Bellaouar, G. Sarrabayrouse, Marise Bafleur, S. Merchant, D. Estève, Myriam Gharbi, A. Peyre-Lavigne and Richard A. Baird and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Electronics Letters.

In The Last Decade

P. Rossel

76 papers receiving 518 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Rossel France 12 525 82 24 21 20 81 550
F. Van de Wiele Belgium 14 672 1.3× 123 1.5× 69 2.9× 16 0.8× 11 0.6× 67 710
George B. Norris United States 11 278 0.5× 85 1.0× 32 1.3× 12 0.6× 31 1.6× 23 328
Tadashi Terasaki Japan 2 289 0.6× 61 0.7× 27 1.1× 7 0.3× 31 1.6× 2 310
S. Christensson Sweden 6 450 0.9× 78 1.0× 47 2.0× 8 0.4× 27 1.4× 7 480
C Bulucea United States 10 330 0.6× 67 0.8× 26 1.1× 8 0.4× 9 0.5× 30 342
Jan-Erik Mueller Germany 10 335 0.6× 37 0.5× 24 1.0× 7 0.3× 36 1.8× 34 348
J. Tihanyi Germany 8 544 1.0× 51 0.6× 15 0.6× 11 0.5× 31 1.6× 19 558
S. Swirhun United States 12 583 1.1× 242 3.0× 67 2.8× 9 0.4× 34 1.7× 23 615
Siddharth Potbhare United States 10 602 1.1× 63 0.8× 21 0.9× 39 1.9× 16 0.8× 36 616
E. Simoen Belgium 12 370 0.7× 63 0.8× 35 1.5× 19 0.9× 17 0.8× 44 382

Countries citing papers authored by P. Rossel

Since Specialization
Citations

This map shows the geographic impact of P. Rossel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Rossel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Rossel more than expected).

Fields of papers citing papers by P. Rossel

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Rossel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Rossel. The network helps show where P. Rossel may publish in the future.

Co-authorship network of co-authors of P. Rossel

This figure shows the co-authorship network connecting the top 25 collaborators of P. Rossel. A scholar is included among the top collaborators of P. Rossel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Rossel. P. Rossel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Charitat, G., et al.. (2005). Comparison between biased and floating guard rings used as junction termination technique. 88. 230–233. 3 indexed citations
2.
Rossel, P., et al.. (2003). A new concept for the lateral DMOS transistor for smart power IC's. 73–76. 19 indexed citations
3.
Dragomirescu, Daniela, et al.. (2003). Novel concepts for high voltage junction termination techniques using very deep trenches. 1. 67–70. 5 indexed citations
4.
Charitat, G., et al.. (2002). 1000 and 1500 volts planar devices using field plate and semi-resistive layers: design and fabrication. edl 6. 803–806. 5 indexed citations
5.
Rossel, P., et al.. (2002). Fabrication of SOI structures by uniform zone melting recrystallization for high voltage ICs. 55. 215–218. 4 indexed citations
6.
Rossel, P., et al.. (2002). LDMOS transistor for SMART POWER circuits: modeling and design. 216–219. 10 indexed citations
7.
Charitat, G., et al.. (2002). Clamped inductive switching of LDMOST for smart power IC's. 359–362. 22 indexed citations
8.
9.
Morancho, Frédéric, et al.. (2001). A new generation of power lateral and vertical floating islands MOS structures. Microelectronics Journal. 32(5-6). 509–516. 8 indexed citations
10.
Charitat, G. & P. Rossel. (1993). Power devices modelling: on and off state. Microelectronics Journal. 24(1-2). 99–113. 1 indexed citations
11.
Charitat, G., et al.. (1990). Improvement of the ON resistance of power VDMOS devices by surface doping: effect on the breakdown voltage. Microelectronics Journal. 21(6). 21–27. 7 indexed citations
12.
Rossel, P., et al.. (1988). POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS. Le Journal de Physique Colloques. 49(C4). C4–621. 4 indexed citations
13.
Sarrabayrouse, G., A. Bellaouar, & P. Rossel. (1986). Electrical properties of MOS radiation dosimeters. Revue de Physique Appliquée. 21(4). 283–287. 20 indexed citations
14.
Rossel, P., et al.. (1982). Le transistor M.O.S. de puissance en régime de saturation : la résistance de saturation et les effets de faible multiplication. Revue de Physique Appliquée. 17(2). 65–74. 3 indexed citations
15.
16.
Graffeuil, J., et al.. (1979). Light-induced effects in GaAs f.e.t.s. Electronics Letters. 15(14). 439–441. 33 indexed citations
17.
Rossel, P., et al.. (1979). Influence de la contre-réaction thermique sur l'impédance de sortie des transistors MOS à canaux courts. Revue de Physique Appliquée. 14(11). 911–919. 4 indexed citations
18.
19.
Graffeuil, J., et al.. (1976). Noise in ungated GaAs F.E.T.. 355–358. 1 indexed citations
20.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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