E. Ohue

804 total citations
49 papers, 487 citations indexed

About

E. Ohue is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, E. Ohue has authored 49 papers receiving a total of 487 indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 3 papers in Biomedical Engineering. Recurrent topics in E. Ohue's work include Photonic and Optical Devices (31 papers), Radio Frequency Integrated Circuit Design (31 papers) and Semiconductor Quantum Structures and Devices (17 papers). E. Ohue is often cited by papers focused on Photonic and Optical Devices (31 papers), Radio Frequency Integrated Circuit Design (31 papers) and Semiconductor Quantum Structures and Devices (17 papers). E. Ohue collaborates with scholars based in Japan, United Kingdom and United States. E. Ohue's co-authors include Katsuyoshi Washio, Katsuya Oda, H. Shimamoto, M. Tanabe, R. Hayami, T. Onai, M. Kondo, Takashi Harada, Kenichi Ohhata and Takatsugu Masuda and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

E. Ohue

48 papers receiving 458 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Ohue Japan	14	484	113	47	21	11	49	487
K. Schonenberg United States	10	338 0.7×	72 0.6×	46 1.0×	10 0.5×	16 1.5×	22	349
I. Post United Kingdom	9	354 0.7×	89 0.8×	30 0.6×	33 1.6×	7 0.6×	20	360
R. Hayami Japan	11	291 0.6×	59 0.5×	25 0.5×	12 0.6×	6 0.5×	27	292
Jung-Suk Goo United States	13	616 1.3×	89 0.8×	87 1.9×	44 2.1×	7 0.6×	43	626
M. Foisy United States	9	443 0.9×	172 1.5×	63 1.3×	27 1.3×	34 3.1×	31	458
L. Lanzerotti United States	10	328 0.7×	81 0.7×	21 0.4×	15 0.7×	10 0.9×	23	335
G. Freeman United States	13	527 1.1×	90 0.8×	79 1.7×	41 2.0×	8 0.7×	36	555
R.B. Nubling United States	9	284 0.6×	89 0.8×	75 1.6×	15 0.7×	26 2.4×	34	297
F. Venturi Italy	11	408 0.8×	89 0.8×	26 0.6×	27 1.3×	6 0.5×	31	419
P. Scheer France	11	374 0.8×	53 0.5×	35 0.7×	22 1.0×	7 0.6×	43	390

Countries citing papers authored by E. Ohue

Since Specialization

Citations

This map shows the geographic impact of E. Ohue's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Ohue with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Ohue more than expected).

Fields of papers citing papers by E. Ohue

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Ohue. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Ohue. The network helps show where E. Ohue may publish in the future.

Co-authorship network of co-authors of E. Ohue

This figure shows the co-authorship network connecting the top 25 collaborators of E. Ohue. A scholar is included among the top collaborators of E. Ohue based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Ohue. E. Ohue is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Oda, Katsuya, et al.. (2003). High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-yGe/sub x/C/sub y/ base by UHV/CVD. IEEE Transactions on Electron Devices. 50(11). 2213–2220. 3 indexed citations

Nonaka, Yoichi, T. Saito, Kiyohiro Ikeda, et al.. (2003). A manufacturable 0.18-μm SiGe BiCMOS technology for 40-Gb/s optical communication LSIs. 84–87. 4 indexed citations

Washio, Katsuyoshi, E. Ohue, Katsuya Oda, et al.. (2002). 82 GHz dynamic frequency divider in 5.5 ps ECL SiGe HBTs. 210–211,. 20 indexed citations

Washio, Katsuyoshi, E. Ohue, H. Shimamoto, et al.. (2002). A 0.2-μm 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications. IEEE Transactions on Electron Devices. 49(2). 271–278. 54 indexed citations

Washio, Katsuyoshi, E. Ohue, Katsuya Oda, et al.. (2002). Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers. IEEE Transactions on Electron Devices. 49(10). 1755–1760. 8 indexed citations

Ohhata, Kenichi, Takatsugu Masuda, E. Ohue, & Katsuyoshi Washio. (2002). Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT. 39–42. 2 indexed citations

Onai, T., E. Ohue, M. Tanabe, et al.. (2002). An NPN 30 GHz, PNP 32 GHz f/sub T/ complementary bipolar technology. 63–66. 1 indexed citations

Ohue, E., R. Hayami, Katsuya Oda, H. Shimamoto, & Katsuyoshi Washio. (2002). 5.3-ps ECL and 71-GHz static frequency divider in self-aligned SEG SiGe HBT. 26–29. 16 indexed citations

Oda, Katsuya, et al.. (2001). Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax. 332–335. 10 indexed citations

10.

Washio, Katsuyoshi, M. Kondo, E. Ohue, et al.. (2001). A 0.2-μm self-aligned selective-epitaxial-growth SiGe HBT featuring 107-GHz f/sub max/ and 6.7-ps ECL. IEEE Transactions on Electron Devices. 48(9). 1989–1994. 10 indexed citations

11.

Washio, Katsuyoshi, R. Hayami, E. Ohue, et al.. (2001). 67-GHz static frequency divider using 0.2-μm self-aligned SiGe HBTs. IEEE Transactions on Microwave Theory and Techniques. 49(1). 3–8. 25 indexed citations

12.

Oda, Katsuya, et al.. (2000). Si 1−x Ge x selective epitaxial growth for ultra-high-speed self-aligned HBTs. Thin Solid Films. 369(1-2). 358–361. 5 indexed citations

13.

Washio, Katsuyoshi, Masao Kondô, E. Ohue, et al.. (1999). 0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL. 557–560. 1 indexed citations

14.

Oda, Katsuya, et al.. (1999). DC and AC performances in selectively grown SiGe-base HBTs. IEICE Transactions on Electronics. 82(11). 2013–2020. 2 indexed citations

15.

Washio, Katsuyoshi, E. Ohue, Katsuya Oda, et al.. (1998). 95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes. 24 indexed citations

16.

Oda, Katsuya, et al.. (1997). 130-GHz fT SiGe HBT technology. 791–794. 20 indexed citations

17.

Onai, T., E. Ohue, M. Tanabe, et al.. (1995). Self-aligned complementary bipolar technology for low-power dissipation and ultra-high-speed LSIs. IEEE Transactions on Electron Devices. 42(3). 413–418. 7 indexed citations

18.

Akazawa, Masamichi, Hideki Hasegawa, & E. Ohue. (1989). In0.53Ga0.47As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO2 Insulator. Japanese Journal of Applied Physics. 28(11). 8 indexed citations

19.

Akazawa, Masamichi, Hideki Hasegawa, & E. Ohue. (1989). In_ Ga_ As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1). Japanese Journal of Applied Physics. 28(11). 1 indexed citations

20.

Hasegawa, Hajime, et al.. (1989). In0.53Ga0.47As MISFETs Having an Ultra-thin MBE Si Interface Control Layer and Photo-CVD SiO2 Insulator. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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