E. Ohue
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- Photonic and Optical Devices 31
- Radio Frequency Integrated Circuit Design 31
- Semiconductor materials and devices 17
- Semiconductor Lasers and Optical Devices 14
- Advancements in Semiconductor Devices and Circuit Design 11
- 3D IC and TSV technologies 6
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- Semiconductor Quantum Structures and Devices 17
- Semiconductor materials and interfaces 7
- Cited by
- Electrical and Electronic EngineeringAtomic and Molecular Physics, and OpticsHardware and Architecture
- Journals
- IEEE Transactions on Electron Devices (12 papers)Japanese Journal of Applied Physics (3 papers)IEEE Journal of Solid-State Circuits (2 papers)
- Partner nations
- JapanUnited KingdomUnited States
In The Last Decade
E. Ohue
48 papers receiving 458 citations
Peers
Comparison fields: 5 of 16
- Electrical and Electronic Engineering 484
- Atomic and Molecular Physics, and Optics 113
- Hardware and Architecture 11
- Biomedical Engineering 47
- Condensed Matter Physics 11
Countries citing papers authored by E. Ohue
This map shows the geographic impact of E. Ohue's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Ohue with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Ohue more than expected).
Fields of papers citing papers by E. Ohue
This network shows the impact of papers produced by E. Ohue. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Ohue. The network helps show where E. Ohue may publish in the future.
Co-authorship network
The 25 scholars most cited alongside E. Ohue, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | 2003 | 4 | |
| 2 | 2003 | 3 | |
| 3 | 2003 | 14 | |
| 4 | 2002 | 1 | |
| 5 | 2002 | 8 | |
| 6 | 2002 | 54 | |
| 7 | 2002 | 20 | |
| 8 | 2002 | 16 | |
| 9 | 2002 | 2 | |
| 10 | Self-aligned selective-epitaxial-growth Si1-x-yGexCy HBT technology featuring 170-GHz fmax | 2001 | 10 |
| 11 | 2001 | 10 | |
| 12 | 2001 | 25 | |
| 13 | 0.2-μm self-aligned SiGe HBT featuring 107-GHz fmax and 6.7-ps ECL | 1999 | 1 |
| 14 | DC and AC performances in selectively grown SiGe-base HBTs | 1999 | 2 |
| 15 | 95 GHz fT self-aligned selective epitaxial SiGe HBT with SMI electrodes | 1998 | 24 |
| 16 | 130-GHz fT SiGe HBT technology | 1997 | 20 |
| 17 | 1995 | 7 | |
| 18 | In_ Ga_ As MISFETs Having an Ultrathin MBE Si Interface Control Layer and Photo-CVD SiO_2 Insulator (SOLID STATE DEVICES AND MATERIALS 1) | 1989 | 1 |
| 19 | 1989 | 8 | |
| 20 | 1989 | 3 |
About E. Ohue
E. Ohue is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics, having authored 49 papers that have together received 487 indexed citations. Recurring topics across this work include Photonic and Optical Devices (31 papers), Radio Frequency Integrated Circuit Design (31 papers), Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (17 papers), Semiconductor Lasers and Optical Devices (14 papers), Advancements in Semiconductor Devices and Circuit Design (11 papers), Semiconductor materials and interfaces (7 papers) and 3D IC and TSV technologies (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (484 citations), Atomic and Molecular Physics, and Optics (113 citations) and Hardware and Architecture (11 citations). E. Ohue has collaborated with scholars based in Japan, United Kingdom and United States. Frequent co-authors include Katsuyoshi Washio, Katsuya Oda, H. Shimamoto, M. Tanabe, R. Hayami, T. Onai, M. Kondo, Takashi Harada, Kenichi Ohhata and Takatsugu Masuda. Their work appears in journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics, IEEE Journal of Solid-State Circuits, Thin Solid Films and IEICE Transactions on Electronics.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.