C Bulucea

459 total citations
30 papers, 342 citations indexed

About

C Bulucea is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C Bulucea has authored 30 papers receiving a total of 342 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 10 papers in Atomic and Molecular Physics, and Optics and 4 papers in Condensed Matter Physics. Recurrent topics in C Bulucea's work include Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). C Bulucea is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (22 papers), Semiconductor materials and devices (16 papers) and Silicon Carbide Semiconductor Technologies (15 papers). C Bulucea collaborates with scholars based in United States, Romania and Belgium. C Bulucea's co-authors include S. Cserveny, E. Kunnen, Roger Loo, A. Sibaja-Hernandez, M. Bădilă, Stefaan Decoutere, S.R. Bahl, P. Francis, Fu‐Cheng Wang and Zeynep Çelik‐Butler and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Japanese Journal of Applied Physics.

In The Last Decade

C Bulucea

29 papers receiving 299 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C Bulucea United States	10	330	67	31	26	9	30	342
Oluwamuyiwa Olubuyide United States	9	306 0.9×	109 1.6×	53 1.7×	36 1.4×	6 0.7×	20	319
P. Rossel France	12	525 1.6×	82 1.2×	18 0.6×	24 0.9×	20 2.2×	81	550
M.H. Juang Taiwan	13	431 1.3×	79 1.2×	73 2.4×	25 1.0×	7 0.8×	58	449
K.Y. Chiu United States	10	325 1.0×	56 0.8×	14 0.5×	26 1.0×	3 0.3×	27	334
T. Wipiejewski United States	11	422 1.3×	181 2.7×	23 0.7×	9 0.3×	9 1.0×	40	435
P. Scheer France	11	374 1.1×	53 0.8×	35 1.1×	22 0.8×	7 0.8×	43	390
P.J. Tsang United States	5	382 1.2×	31 0.5×	33 1.1×	19 0.7×	5 0.6×	13	390
M. Minondo France	8	235 0.7×	68 1.0×	51 1.6×	33 1.3×	5 0.6×	21	257
D.B. Estreich United States	11	367 1.1×	49 0.7×	32 1.0×	26 1.0×	22 2.4×	20	379
I. Post United Kingdom	9	354 1.1×	89 1.3×	30 1.0×	33 1.3×	7 0.8×	20	360

Countries citing papers authored by C Bulucea

Since Specialization

Citations

This map shows the geographic impact of C Bulucea's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C Bulucea with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C Bulucea more than expected).

Fields of papers citing papers by C Bulucea

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C Bulucea. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C Bulucea. The network helps show where C Bulucea may publish in the future.

Co-authorship network of co-authors of C Bulucea

This figure shows the co-authorship network connecting the top 25 collaborators of C Bulucea. A scholar is included among the top collaborators of C Bulucea based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C Bulucea. C Bulucea is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Bădilă, M., et al.. (2008). Generalised DC characteristics of gate-controlled diodes in avalanche breakdown regime. ed 26. 27–30. 2 indexed citations

Decoutere, Stefaan, et al.. (2004). Ultra low power SiGe:C HBT for 0.18 μm RF-BiCMOS. 5.4.1–5.4.4. 9 indexed citations

Bulucea, C, et al.. (2003). Advances in power MOSFET technologies for automotive applications. 9–14. 4 indexed citations

Bulucea, C, et al.. (1997). Threshold voltage control in buried-channel MOSFETs. Solid-State Electronics. 41(9). 1345–1354. 7 indexed citations

Bulucea, C. (1993). Recalculation of Irvin's resistivity curves for diffused layers in silicon using updated bulk resistivity data. Solid-State Electronics. 36(4). 489–493. 27 indexed citations

Bulucea, C, et al.. (1991). Trench DMOS transistor technology for high-current (100 A range) switching. Solid-State Electronics. 34(5). 493–507. 28 indexed citations

Bulucea, C. (1990). On the MOS depletion of a high-level-injection plasma. Solid-State Electronics. 33(10). 1247–1253. 8 indexed citations

Bulucea, C, et al.. (1989). Field distribution and avalanche breakdown of trench MOS capacitors operated in deep depletion. IEEE Transactions on Electron Devices. 36(11). 2521–2529. 4 indexed citations

Bulucea, C, et al.. (1979). Deep-depletion breakdown voltage of silicon-dioxide/silicon MOS capacitors. IEEE Transactions on Electron Devices. 26(3). 201–205. 56 indexed citations

10.

Bulucea, C, et al.. (1978). The breakdown voltage of planar Schottky diodes. International Journal of Electronics. 45(5). 523–534. 6 indexed citations

11.

Bulucea, C, et al.. (1977). The metal-overlap laterally-diffused (mold) Schottky diode. Solid-State Electronics. 20(6). 499–IN1. 6 indexed citations

12.

Bulucea, C, et al.. (1975). The field distribution and the critical field in surface-breakdown-limited planar siliconpnjunctions. International Journal of Electronics. 38(5). 597–607. 4 indexed citations

13.

Bulucea, C. (1975). Avalanche injection into the oxide in silicon gate-controlled devices—I theory. Solid-State Electronics. 18(4). 363–374. 29 indexed citations

14.

Bulucea, C, et al.. (1975). Enhanced breakdown voltage in planar metal-overlap laterally diffused (MOLD) Schottky diodes. Applied Physics Letters. 27(11). 620–622. 4 indexed citations

15.

Bulucea, C. (1975). Avalanche injection into the oxide in silicon gate-controlled devices—II. Experimental results. Solid-State Electronics. 18(5). 381–391. 14 indexed citations

16.

Bulucea, C, et al.. (1974). Avalanche Injection in Silicon Planar Semiconductor Devices. Japanese Journal of Applied Physics. 13(S2). 449–449. 3 indexed citations

17.

Bulucea, C, et al.. (1974). Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field. Solid-State Electronics. 17(9). 881–888. 17 indexed citations

18.

Bulucea, C, et al.. (1973). The calculation of the avalanche multiplication factor in silicon p—N junctions taking into account the carrier generation (thermal or optical) in the space-charge region. IEEE Transactions on Electron Devices. 20(8). 692–701. 20 indexed citations

19.

Cserveny, S. & C Bulucea. (1969). The spatial variation of the quasi-Fermi potentials in reverse-biased p⁺-n junctions and its implications in transition region capacitance calculations. IEEE Transactions on Electron Devices. 16(2). 220–222. 6 indexed citations

20.

Bulucea, C. (1967). The Effect of the Emitter-base Lateral Diode on Double-diffused Planar Transistor Current Gain†. International Journal of Electronics. 23(3). 201–215. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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