Jon Barth

501 total citations
29 papers, 357 citations indexed

About

Jon Barth is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Hardware and Architecture. According to data from OpenAlex, Jon Barth has authored 29 papers receiving a total of 357 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 4 papers in Materials Chemistry and 3 papers in Hardware and Architecture. Recurrent topics in Jon Barth's work include Electrostatic Discharge in Electronics (26 papers), Electromagnetic Compatibility and Noise Suppression (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). Jon Barth is often cited by papers focused on Electrostatic Discharge in Electronics (26 papers), Electromagnetic Compatibility and Noise Suppression (16 papers) and Integrated Circuits and Semiconductor Failure Analysis (15 papers). Jon Barth collaborates with scholars based in United States, Germany and Belgium. Jon Barth's co-authors include L. Henry, K. Verhaege, Mary Alexandria Kelly, R.A. Ashton, Horst Gieser, E. Worley, David Pommerenke, Douglas C. Smith, George H. Weiss and J.T. Watt and has published in prestigious journals such as Microelectronics Reliability, Journal of Electrostatics and IEEE Transactions on Electronics Packaging Manufacturing.

In The Last Decade

Jon Barth

26 papers receiving 317 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Jon Barth United States	9	357	24	14	7	5	29	357
Christian Russ Germany	15	470 1.3×	18 0.8×	28 2.0×	4 0.6×	2 0.4×	42	481
Kai Esmark Germany	15	571 1.6×	29 1.2×	15 1.1×	7 1.0×	19 3.8×	58	575
Michael Stockinger United States	11	347 1.0×	23 1.0×	11 0.8×	2 0.3×		32	351
R. Tu United States	8	309 0.9×	32 1.3×	10 0.7×		4 0.8×	15	319
Jizhi Liu China	11	306 0.9×	6 0.3×	5 0.4×	5 0.7×	3 0.6×	50	310
Bingxu Ning China	10	301 0.8×	29 1.2×	11 0.8×			42	304
P. Hopper United States	12	377 1.1×	11 0.5×	4 0.3×		3 0.6×	46	380
K. Verhaege Belgium	15	827 2.3×	26 1.1×	7 0.5×	3 0.4×	1 0.2×	39	828
M. Brox Germany	8	269 0.8×	7 0.3×	18 1.3×	1 0.1×	6 1.2×	19	276
Jiefeng Lin China	5	126 0.4×	20 0.8×	4 0.3×	6 0.9×		6	128

Countries citing papers authored by Jon Barth

Since Specialization

Citations

This map shows the geographic impact of Jon Barth's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Jon Barth with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Jon Barth more than expected).

Fields of papers citing papers by Jon Barth

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Jon Barth. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Jon Barth. The network helps show where Jon Barth may publish in the future.

Co-authorship network of co-authors of Jon Barth

This figure shows the co-authorship network connecting the top 25 collaborators of Jon Barth. A scholar is included among the top collaborators of Jon Barth based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Jon Barth. Jon Barth is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Miao, Guoqing, et al.. (2013). On-chip system level ESD protection for Class G audio power amplifiers. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 1 indexed citations

2.

Ashton, R.A., Theo Smedes, Mirko Scholz, et al.. (2012). HMM round robin study: What to expect when testing components to the IEC 61000-4-2 waveform. Electrical Overstress/Electrostatic Discharge Symposium. 1–8. 7 indexed citations

3.

Righter, Alan, T. L. Welsher, Marcel Dekker, et al.. (2012). Progress towards a joint ESDA/JEDEC CDM standard: Methods, experiments, and results. 10–10. 2 indexed citations

4.

Watt, J.T., et al.. (2009). Using VFTLP data to design for CDM robustness. 1–6. 20 indexed citations

5.

Ashton, R.A., Jon Barth, Horst Gieser, et al.. (2008). VF-TLP round robin study, analysis and results. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 40–49. 1 indexed citations

6.

Barth, Jon, et al.. (2005). Voltages before and after current in HBM testers and real HBM. Electrical Overstress/Electrostatic Discharge Symposium. 1–11. 11 indexed citations

7.

Henry, L., et al.. (2005). Charged device model (CDM) metrology: limitations and problems. 167–179. 1 indexed citations

8.

Barth, Jon, et al.. (2004). Real HBM and MM waveform parameters. Journal of Electrostatics. 62(2-3). 195–209. 4 indexed citations

9.

Voldman, Steven H., R.A. Ashton, Jon Barth, et al.. (2003). Standardization of the transmission line pulse (TLP) methodology for electrostatic discharge (ESD). Electrical Overstress/Electrostatic Discharge Symposium. 1–10. 18 indexed citations

10.

Barth, Jon, et al.. (2003). Real HBM & MM – the dV/dt threat. 1–9. 6 indexed citations

11.

Kelly, Mary Alexandria, et al.. (2003). Developing a transient induced latch-up standard for testing integrated circuits. eos esd 11. 178–189. 22 indexed citations

12.

Henry, L., et al.. (2003). Issues concerning CDM ESD verification modules-the need to move to alumina. 203–211. 6 indexed citations

13.

Pommerenke, David, et al.. (2002). Metrology and methodology of system level ESD testing. 29–39. 12 indexed citations

14.

Henry, L., et al.. (2002). Charged device model metrology: limitations and problems. Microelectronics Reliability. 42(6). 919–927. 3 indexed citations

15.

Barth, Jon, et al.. (2002). Correlation considerations: Real HBM to TLP and HBM testers. Microelectronics Reliability. 42(6). 909–917. 12 indexed citations

16.

Henry, L., et al.. (2002). The importance of standardizing CDM ESD test head parameters to obtain data correlation. 72–84. 15 indexed citations

17.

Barth, Jon, et al.. (2001). TLP calibration, correlation, standards, and new techniques. IEEE Transactions on Electronics Packaging Manufacturing. 24(2). 99–108. 141 indexed citations

18.

Henry, L., et al.. (2001). The importance of standardizing CDM ESD test head parameters to obtain data correlation. Microelectronics Reliability. 41(11). 1789–1800. 1 indexed citations

19.

Verhaege, K., Mary Alexandria Kelly, Horst Gieser, et al.. (1999). Investigation into socketed CDM (SDM) tester parasitics. Microelectronics Reliability. 39(11). 1531–1540. 2 indexed citations

20.

Verhaege, K., Mary Alexandria Kelly, Horst Gieser, et al.. (1998). Investigation into socketed CDM (SDM) tester parasitics. 301–310. 6 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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