Alain Le Corre

3.2k citations

134 papers · 2.0k indexed · h-index 25

Atomic and Molecular Physics, and Optics top 1%
Electrical and Electronic Engineering top 2%
Materials Chemistry top 10%
Biomedical Engineering top 10%
Condensed Matter Physics top 5%

Co-authors: B. Lambert S. Loualiche H. L’Haridon S. Saläun Nicolas Bertru Anne Ponchet Olivier Dehaese Cyril Paranthoën
Topics: Semiconductor Quantum Structures and Devices (92 papers)Semiconductor Lasers and Optical Devices (38 papers)Photonic and Optical Devices (37 papers)
Cited by: Atomic and Molecular Physics, and Optics Electrical and Electronic Engineering Condensed Matter Physics
Journals: Physical review. B, Condensed matter Applied Physics Letters Journal of Applied Physics
Partner nations: France Switzerland China

In The Last Decade

Alain Le Corre

131 papers receiving 1.9k citations

Peers

Countries citing papers authored by Alain Le Corre

Since Specialization

Citations

This map shows the geographic impact of Alain Le Corre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Alain Le Corre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Alain Le Corre more than expected).

Fields of papers citing papers by Alain Le Corre

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Alain Le Corre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Alain Le Corre. The network helps show where Alain Le Corre may publish in the future.

Co-authorship network of co-authors of Alain Le Corre

This figure shows the co-authorship network connecting the top 25 collaborators of Alain Le Corre. A scholar is included among the top collaborators of Alain Le Corre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Alain Le Corre. Alain Le Corre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Abrupt GaP/Si hetero-interface using bistepped Si buffer 2015 ·Applied Physics Letters ·Yanping Wang,Julien Stodolna,Mounib Bahri,(unknown),(unknown),Samy Almosni,Rozenn Bernard,(unknown),(unknown),A. Létoublon,Tony Rohel,(unknown),L. Largeau,G. Patriarche,Alain Le Corre,(unknown),César Magén,Charles Cornet,Olivier Durand	15
2	VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span 2013 ·IEEE Photonics Technology Letters ·(unknown),Christophe Levallois,Cyril Paranthoën,Jean-Philippe Gauthier,Nicolas Chevalier,Mathieu Perrin,Yoan Léger,Olivier de Sagazan,Alain Le Corre	1
3	Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells 2013 ·Journal of Applied Physics ·Samy Almosni,C. Robert,(unknown),Charles Cornet,A. Létoublon,(unknown),Christophe Levallois,Marshall D. Perrin,(unknown),Laurent Pédesseau,A. Balocchi,(unknown),Jacky Even,Jean‐Marc Jancu,Nicolas Bertru,(unknown),(unknown),Alain Le Corre	43
4	Enhancement of the polarization stability of a 155 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes 2012 ·Optics Express ·Jean-Philippe Gauthier,Cyril Paranthoën,Christophe Levallois,(unknown),(unknown),Hervé Folliot,Marshall D. Perrin,Olivier Dehaese,Nicolas Chevalier,Olivier Durand,Alain Le Corre	5
5	Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon 2012 ·Journal of Applied Physics ·(unknown),C. Robert,Weiming Guo,A. Létoublon,Charles Cornet,Elias Georges,Anne Ponchet,Tony Rohel,Nicolas Bertru,A. Balocchi,(unknown),Jean‐Sébastien Micha,Marshall D. Perrin,(unknown),(unknown),Alain Le Corre	32
6	Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si 2011 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·(unknown),C. Robert,Charles Cornet,Weiming Guo,Antoine Létoublon,Mathieu Perrin,Nicolas Bertru,Jacky Even,Nicolas Chevalier,Hervé Folliot,S. Loualiche,Anne Ponchet,Elias Georges,Jean‐Sébastien Micha,Olivier Durand,Alain Le Corre	2
7	Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering 2011 ·Applied Surface Science ·Weiming Guo,(unknown),Charles Cornet,A. Létoublon,(unknown),Tony Rohel,Soline Boyer‐Richard,Nicolas Bertru,(unknown),Jacky Even,Alain Le Corre	25
8	Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen 2011 ·Applied Physics Letters ·Cédric Robert,(unknown),(unknown),Jacky Even,Charles Cornet,Olivier Durand,(unknown),J.-M. Jancu,Weiming Guo,A. Létoublon,Hervé Folliot,Soline Boyer‐Richard,Mathieu Perrin,Nicolas Chevalier,Olivier Dehaese,(unknown),S. Loualiche,Alain Le Corre	31
9	Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells 2003 ·Journal of Applied Physics ·(unknown),S. Loualiche,Jacky Even,Alain Le Corre,Olivier Dehaese,(unknown),(unknown)	15
10	Self-organized InAs islands on InP(311)B substrates emitting around 1.55μm 1999 ·Journal of Crystal Growth ·(unknown),V. Drouot,Nicolas Bertru,B. Lambert,S. Loualiche,Alain Le Corre	20
11	Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100) 1997 ·Applied Physics Letters ·(unknown),V. Drouot,B. Lambert,D. Lemoine,S. Loualiche,Alain Le Corre,H. L’Haridon	23
12	Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity 1997 ·Superlattices and Microstructures ·(unknown),M. Pugnet,J. Collet,B. Lambert,Christiano J. S. de Matos,H. L’Haridon,Alain Le Corre,Jeffrey O. White	3
13	1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer 1995 ·IEEE Photonics Technology Letters ·(unknown),Alain Le Corre,Fabrice Clérot,S. Saläun,S. Loualiche,(unknown),L. Henry,(unknown),(unknown),(unknown),P. Lamouler	24
14	Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT 1990 ·IEEE Electron Device Letters ·S. Loualiche,(unknown),Alain Le Corre,D. Lecrosnier,(unknown),L. Henry,Christine Guillemot	14
15	Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system 1990 ·Journal of Crystal Growth ·Alain Le Corre,(unknown),A. Guivarc’h,D. Lecrosnier,J. Caulet,Marine Minier,Guy Ropars,P. A. Badoz,J. Y. Duboz	12
16	High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate 1990 ·(unknown),J. Caulet,M. Gauneau,B. Lambert,Alain Le Corre,A. Poudoulec,D. Lecrosnier	1
17	Schottky diode and field-effect transistor on InP 1989 ·Applied Physics Letters ·S. Loualiche,(unknown),H. L’Haridon,M. Salvi,Alain Le Corre,D. Lecrosnier,P.N. Favennec	16
18	Behaviour of erbium implanted in InP 1988 ·Journal of Electronic Materials ·(unknown),Amber D. Rolland,P.N. Favennec,B. Lambert,Alain Le Corre,H. L’Haridon,M. Salvi	13
19	Nondiffusion and 1.54/μm luminescence of erbium implanted in InP 1987 ·Electronics Letters ·P.N. Favennec,H. L’Haridon,Alain Le Corre,M. Salvi,M. Gauneau	12
20	Quelques remarques techniques sur la conduite des cures neuroleptiques. 1956 ·Annales Médico-psychologiques revue psychiatrique ·(unknown),(unknown),(unknown),Alain Le Corre,Judith S. Kestenberg,(unknown),(unknown),(unknown),Hansen,(unknown)	1

About Alain Le Corre

Alain Le Corre is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics, having authored 134 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (92 papers), Semiconductor Lasers and Optical Devices (38 papers) and Photonic and Optical Devices (37 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (1.6k citations), Electrical and Electronic Engineering (1.6k citations) and Condensed Matter Physics (187 citations). Alain Le Corre has collaborated with scholars based in France, Switzerland and China. Frequent co-authors include B. Lambert, S. Loualiche, H. L’Haridon, S. Saläun, Nicolas Bertru, Anne Ponchet, Olivier Dehaese, Cyril Paranthoën, D. Lecrosnier and Hervé Folliot. Their work appears in journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact