E. Worley

460 citations

31 papers · 350 indexed · h-index 11

Impact in

Electrical and Electronic Engineering top 10%
- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Silicon Carbide Semiconductor Technologies
- Radio Frequency Integrated Circuit Design
Hardware and Architecture
- Physical Unclonable Functions (PUFs) and Hardware Security

Papers in

Electrical and Electronic Engineering 31
- Electrostatic Discharge in Electronics 18
- Integrated Circuits and Semiconductor Failure Analysis 16
- Advancements in Semiconductor Devices and Circuit Design 15
- Semiconductor materials and devices 14
- Electromagnetic Compatibility and Noise Suppression 11
- Silicon Carbide Semiconductor Technologies 3
- Thin-Film Transistor Technologies 2
Hardware and Architecture 2

Co-authors: G.P. Li Marilyn E. Tennyson B.E. Jones Ratnesh Gupta R.A. Ashton Jon Barth Timothy J. Maloney Scott T. Martin
Journals: IEEE Electron Device Letters (4 papers)IEEE Transactions on Nuclear Science (2 papers)Solid-State Electronics (2 papers)Applied Physics Letters (1 paper)IEEE Journal of Solid-State Circuits (1 paper)
Partner nations: United States United Kingdom Germany

In The Last Decade

E. Worley

30 papers receiving 305 citations

Peers

Countries citing papers authored by E. Worley

Since Specialization

Citations

This map shows the geographic impact of E. Worley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Worley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Worley more than expected).

Fields of papers citing papers by E. Worley

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Worley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Worley. The network helps show where E. Worley may publish in the future.

Co-authorship network

The 25 scholars most cited alongside E. Worley, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with E. Worley Line = papers co-authored together E. Worley links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	CDM effect on a 65nm SOC LNA Electrical Overstress/Electrostatic Discharge Symposium ·E. Worley, Hilary Thean, Fiona Green, Amer Nasser Alhubayshi, G. Wanrooy, 玲子手島, Xiaonan Zhang	2010	4
2	BSIM4-based lateral diode model for RF ESD applications Carlos Henrique Daros, Yang Du, Marta Martín Masot, G. Wanrooy, E. Worley, Chinh-Lung LIn, Zhen yu Nan, Geoffrey Yeap	2010	2
3	Pre Pulse Voltage in the Human Body Model Electrical Overstress/Electrostatic Discharge Symposium ·R.A. Ashton, E. Worley	2006	5
4	Voltages before and after current in HBM testers and real HBM Electrical Overstress/Electrostatic Discharge Symposium ·Jon Barth, R.A. Ashton, E. Worley, Fidan Mayilova	2005	11
5	New ballasting method for MOS output drivers and power bus clamps E. Worley	2005	11
6	Standardization of the transmission line pulse (TLP) methodology for electrostatic discharge (ESD) Electrical Overstress/Electrostatic Discharge Symposium ·Steven H. Voldman, R.A. Ashton, Jon Barth, David Bennett, Octavian Ciprian Bordeanu, Виктор Коломийцев, J.M. Daughton, В. И. ФИЛЯКОВА, Vitaliy Hdychinsky, Horst Gieser, L. Henry, M. Jacobson, T. Bertram, M. Natarajan, Mitchell L. Meyer, Timothy J. Maloney, Eiji HASAGAWA, Oksana V. Kiryakova, E. Worley	2003	18
7	Unexpected effect in the conduction characteristic of P+SOI resistors when exposed to ESD E. Worley	2003	2
8	Comparison of electrical properties of SOS and ISE SOI transistors E. Worley, Antonio Garrido Rubia, М. М. Рудковская	2003	0
9	Optimization of input protection diode for high speed applications Electrical Overstress/Electrostatic Discharge Symposium ·E. Worley, Muhammad Sharjee	2002	14
10	Electrostatic discharge (ESD) technology benchmarking strategy for evaluating ESD robustness of CMOS technologies Steven H. Voldman, Warren Anderson, R.A. Ashton, Виктор Коломийцев, C. Duvvury, Timothy J. Maloney, E. Worley	2002	2
11	Modeling the bias and scaling dependence of drain current fluctuations due to single carrier trapping in submicron MOSFET's M.K. Chatli, G.P. Li, E. Worley, Joarder Kamruzzman	2002	3
12	Improved performance and reliability of split gate source-side injected flash memory cells (unknown), K. Van Houdt, Kenneth Fox, Philip K. Chan, E. Worley, Uma Sharma, M Diani, G.P. Li	2002	7
13	A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies Microelectronics Reliability ·Steven H. Voldman, Warren Anderson, R.A. Ashton, Виктор Коломийцев, C. Duvvury, Timothy J. Maloney, E. Worley	2001	9
14	The gate bias and geometry dependence of random telegraph signal amplitudes [MOSFET] IEEE Electron Device Letters ·M.K. Chatli, G.P. Li, E. Worley, Joarder Kamruzzman	1997	29
15	Degraded noise characteristics of submicrometer area field effect transistors subjected to plasma etching and Fowler–Nordheim stress Applied Physics Letters ·Scott T. Martin, G.P. Li, E. Worley, Joarder Kamruzzman	1995	11
16	Sub-micron chip ESD protection schemes which avoid avalanching junctions E. Worley, Ratnesh Gupta, B.E. Jones, Jeremy Alexander Moreno Ortiz, JP Mulhall, Marilyn E. Tennyson	1995	89
17	The effects of plasma etching induced gate oxide degradation on MOSFET's 1/f noise IEEE Electron Device Letters ·Jeong-Hoon Huh, Georg Nakos, G.P. Li, Taciana Martins Barbosa, E. Worley, Joarder Kamruzzman, Jeremy Alexander Moreno Ortiz	1995	15
18	SOI transistor measurement techniques using body contacted transistors IEEE Transactions on Nuclear Science ·E. Worley, S.R.O. Williams	1989	2
19	Performance of carry lookahead generator circuit fabricated with gallium arsenide IEEE Journal of Solid-State Circuits ·이교찬, M. Sokolich, Carol Maknae, M. N. Reaume, Sabine Doff, E. Worley	1987	1
20	Theory of the fully depleted SOS/MOS transistor Solid-State Electronics ·E. Worley	1980	26

About E. Worley

E. Worley is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Infectious Diseases and Organic Chemistry, having authored 31 papers that have together received 350 indexed citations. Recurring topics across this work include Electrostatic Discharge in Electronics (18 papers), Integrated Circuits and Semiconductor Failure Analysis (16 papers), Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (14 papers), Electromagnetic Compatibility and Noise Suppression (11 papers), Silicon Carbide Semiconductor Technologies (3 papers), Thin-Film Transistor Technologies (2 papers) and Semiconductor materials and interfaces (2 papers). The work is most often cited by research in Electrical and Electronic Engineering (349 citations), Hardware and Architecture (25 citations), Atomic and Molecular Physics, and Optics (16 citations), Condensed Matter Physics (4 citations) and Biomedical Engineering (14 citations). E. Worley has collaborated with scholars based in United States, United Kingdom and Germany. Frequent co-authors include G.P. Li, Marilyn E. Tennyson, B.E. Jones, Ratnesh Gupta, R.A. Ashton, Jon Barth, Timothy J. Maloney, Scott T. Martin, Steven H. Voldman and S.R.O. Williams. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science, Solid-State Electronics, Applied Physics Letters and IEEE Journal of Solid-State Circuits.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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