H. L’Haridon

1.9k total citations
76 papers, 1.6k citations indexed

About

H. L’Haridon is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, H. L’Haridon has authored 76 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 60 papers in Electrical and Electronic Engineering, 54 papers in Atomic and Molecular Physics, and Optics and 29 papers in Materials Chemistry. Recurrent topics in H. L’Haridon's work include Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and interfaces (27 papers) and Semiconductor materials and devices (27 papers). H. L’Haridon is often cited by papers focused on Semiconductor Quantum Structures and Devices (29 papers), Semiconductor materials and interfaces (27 papers) and Semiconductor materials and devices (27 papers). H. L’Haridon collaborates with scholars based in France, Algeria and Switzerland. H. L’Haridon's co-authors include P.N. Favennec, M. Salvi, D. Moutonnet, M. Gauneau, Alain Le Corre, B. Lambert, S. Saläun, Anne Ponchet, G. Pelous and A. Guivarc’h and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

H. L’Haridon

74 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
H. L’Haridon France 19 1.2k 854 758 297 226 76 1.6k
Gernot S. Pomrenke United States 15 970 0.8× 595 0.7× 1.0k 1.3× 249 0.8× 111 0.5× 32 1.4k
Junji Saraie Japan 21 1.3k 1.1× 814 1.0× 864 1.1× 225 0.8× 168 0.7× 93 1.6k
M. Salvi France 15 821 0.7× 389 0.5× 601 0.8× 273 0.9× 216 1.0× 53 1.1k
H. Sobotta Germany 20 1.1k 0.9× 487 0.6× 1.1k 1.4× 181 0.6× 244 1.1× 89 1.4k
W. R. Thurber United States 16 964 0.8× 491 0.6× 801 1.1× 174 0.6× 395 1.7× 27 1.6k
J. N. Miller United States 20 1.2k 1.0× 960 1.1× 408 0.5× 257 0.9× 89 0.4× 64 1.5k
J. E. Berkeyheiser United States 14 881 0.7× 437 0.5× 549 0.7× 439 1.5× 171 0.8× 19 1.2k
B. W. Wessels United States 19 838 0.7× 549 0.6× 892 1.2× 266 0.9× 319 1.4× 52 1.4k
P. E. Freeland United States 18 661 0.5× 560 0.7× 566 0.7× 98 0.3× 120 0.5× 26 1.2k
A. Misiuk Poland 17 821 0.7× 415 0.5× 734 1.0× 81 0.3× 101 0.4× 244 1.1k

Countries citing papers authored by H. L’Haridon

Since Specialization
Citations

This map shows the geographic impact of H. L’Haridon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by H. L’Haridon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites H. L’Haridon more than expected).

Fields of papers citing papers by H. L’Haridon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by H. L’Haridon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by H. L’Haridon. The network helps show where H. L’Haridon may publish in the future.

Co-authorship network of co-authors of H. L’Haridon

This figure shows the co-authorship network connecting the top 25 collaborators of H. L’Haridon. A scholar is included among the top collaborators of H. L’Haridon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with H. L’Haridon. H. L’Haridon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kechouane, M., Tayeb Mohammed‐Brahim, H. L’Haridon, et al.. (1998). Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon. Philosophical Magazine B. 77(1). 137–145. 4 indexed citations
2.
Drouot, V., B. Lambert, D. Lemoine, et al.. (1997). Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100). Applied Physics Letters. 71(19). 2818–2820. 23 indexed citations
3.
Pugnet, M., J. Collet, B. Lambert, et al.. (1997). Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity. Superlattices and Microstructures. 22(4). 505–509. 3 indexed citations
4.
Clérot, Fabrice, et al.. (1995). Simulation and photoluminescence characterization of transverse electric-transverse magnetic emission of strained Ga0.47In0.53As/Ga0.62In0.38As superlattices. Materials Science and Engineering B. 31(3). 293–297. 5 indexed citations
5.
Favennec, P.N., H. L’Haridon, D. Moutonnet, M. Salvi, & M. Gauneau. (1993). Optical Activation of Ion Implanted Rare-Earths. MRS Proceedings. 301. 42 indexed citations
6.
L’Haridon, H., et al.. (1991). Spatial investigation of an iron-doped indium phosphide ingot. Applied Surface Science. 50(1-4). 237–244. 4 indexed citations
7.
Favennec, P.N., et al.. (1991). Anomalous behavior of ion-implanted GaSb. Applied Physics Letters. 59(15). 1872–1874. 63 indexed citations
8.
Krawczyk, Stanisław, et al.. (1990). Assessment of Fe-doped semi-insulating InP crystals by scanning photoluminescence measurements. Journal of Applied Physics. 68(2). 755–759. 27 indexed citations
9.
Loualiche, S., H. L’Haridon, M. Salvi, et al.. (1989). Schottky diode and field-effect transistor on InP. Applied Physics Letters. 54(13). 1238–1240. 16 indexed citations
10.
Favennec, P.N., et al.. (1989). Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials. Electronics Letters. 25(11). 718–719. 373 indexed citations
11.
Gauneau, M., Alain Le Corre, M. Salvi, et al.. (1989). Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment. Journal of Applied Physics. 66(6). 2241–2247. 7 indexed citations
12.
Rolland, Amber D., P.N. Favennec, B. Lambert, et al.. (1988). Behaviour of erbium implanted in InP. Journal of Electronic Materials. 17(5). 351–354. 13 indexed citations
13.
Loualiche, S., H. L’Haridon, Alain Le Corre, et al.. (1988). Schottky and field-effect transistor fabrication on InP and GaInAs. Applied Physics Letters. 52(7). 540–542. 37 indexed citations
14.
Favennec, P.N., H. L’Haridon, Alain Le Corre, M. Salvi, & M. Gauneau. (1987). Nondiffusion and 1.54/μm luminescence of erbium implanted in InP. Electronics Letters. 23(13). 684–686. 12 indexed citations
15.
L’Haridon, H., P.N. Favennec, M. Salvi, & M. Razeghi. (1985). Shallow p + layers in In 0.53 Ga 0.47 As by Hg implantation. Electronics Letters. 21(3). 122–124. 6 indexed citations
16.
Auvray, P, A. Guivarc’h, H. L’Haridon, J. P. Mercier, & P. Hénoc. (1985). Formation, microstructure et résistances des contacts AuGe/n-GaAs, AuGe/n-InP, AuZn/p-InP et AuBe/p-InP. Thin Solid Films. 127(1-2). 39–68. 32 indexed citations
17.
Gauneau, M., et al.. (1983). Depth profiles of Fe and Cr in InP after annealing. Nuclear Instruments and Methods in Physics Research. 209-210. 671–675. 3 indexed citations
18.
Auvray, P, A. Guivarc’h, H. L’Haridon, et al.. (1982). Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature. Journal of Applied Physics. 53(9). 6202–6207. 42 indexed citations
19.
Deveaud, B., B. Lambert, H. L’Haridon, & G. Picoli. (1981). Cr2+ internal luminescence in GaA1As.. Journal of Luminescence. 24-25. 273–276. 6 indexed citations
20.
Favennec, P.N. & H. L’Haridon. (1979). Implantation of shallow impurities in Cr-doped semi-insulating GaAs. Applied Physics Letters. 35(9). 699–701. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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