D. Lecrosnier

739 total citations
43 papers, 556 citations indexed

About

D. Lecrosnier is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Surfaces, Coatings and Films. According to data from OpenAlex, D. Lecrosnier has authored 43 papers receiving a total of 556 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 6 papers in Surfaces, Coatings and Films. Recurrent topics in D. Lecrosnier's work include Semiconductor materials and devices (25 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). D. Lecrosnier is often cited by papers focused on Semiconductor materials and devices (25 papers), Semiconductor Quantum Structures and Devices (16 papers) and Advancements in Semiconductor Devices and Circuit Design (16 papers). D. Lecrosnier collaborates with scholars based in France and United States. D. Lecrosnier's co-authors include G. Pelous, Alain Le Corre, S. Loualiche, M. Salvi, H. L’Haridon, L. Henry, M. Gauneau, P.N. Favennec, J. F. Bresse and J. Caulet and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

D. Lecrosnier

40 papers receiving 508 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Lecrosnier France 16 513 332 97 63 44 43 556
L. A. Koszi United States 15 564 1.1× 431 1.3× 91 0.9× 39 0.6× 43 1.0× 38 640
Yuichi Ide Japan 10 292 0.6× 204 0.6× 91 0.9× 28 0.4× 48 1.1× 20 349
P. W. Hutchinson United Kingdom 11 344 0.7× 340 1.0× 85 0.9× 68 1.1× 24 0.5× 16 426
J. S. Park United States 7 336 0.7× 292 0.9× 159 1.6× 47 0.7× 23 0.5× 9 451
R. Wörner Germany 7 272 0.5× 290 0.9× 94 1.0× 50 0.8× 34 0.8× 8 383
S. M. Newstead United Kingdom 11 305 0.6× 217 0.7× 134 1.4× 50 0.8× 24 0.5× 28 367
P. Grabbe United States 12 357 0.7× 363 1.1× 81 0.8× 25 0.4× 67 1.5× 29 519
H.P. Zeindl Germany 12 283 0.6× 231 0.7× 144 1.5× 61 1.0× 25 0.6× 33 387
C. Rigo Italy 13 429 0.8× 423 1.3× 127 1.3× 16 0.3× 17 0.4× 52 517
Jack Yuan-Chen Sun United States 10 607 1.2× 233 0.7× 196 2.0× 41 0.7× 14 0.3× 12 642

Countries citing papers authored by D. Lecrosnier

Since Specialization
Citations

This map shows the geographic impact of D. Lecrosnier's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Lecrosnier with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Lecrosnier more than expected).

Fields of papers citing papers by D. Lecrosnier

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Lecrosnier. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Lecrosnier. The network helps show where D. Lecrosnier may publish in the future.

Co-authorship network of co-authors of D. Lecrosnier

This figure shows the co-authorship network connecting the top 25 collaborators of D. Lecrosnier. A scholar is included among the top collaborators of D. Lecrosnier based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Lecrosnier. D. Lecrosnier is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Saläun, S., Alain Le Corre, M. Gauneau, & D. Lecrosnier. (2002). Semi-insulating InP:Fe by GSMBE: Optimal growth conditions. 147–150. 1 indexed citations
3.
Loualiche, S., et al.. (1990). Low-temperature DC characteristics of pseudomorphic Ga/sub 0.18/In/sub 0.82/P/InP/Ga/sub 0.47/In/sub 0.53/As HEMT. IEEE Electron Device Letters. 11(4). 153–155. 14 indexed citations
4.
Corre, Alain Le, A. Guivarc’h, D. Lecrosnier, et al.. (1990). Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE system. Journal of Crystal Growth. 105(1-4). 234–239. 12 indexed citations
5.
Alnot, P., et al.. (1990). X-ray photoelectron diffraction applied to crystallinity studies of III-V surfaces. Physica Scripta. 41(4). 522–525. 4 indexed citations
6.
Caulet, J., M. Gauneau, B. Lambert, et al.. (1990). High quality lattice-mismatched In/sub 0.82/Ga/sub 0.18/As layer grown on InP substrate. 12. 139–143. 1 indexed citations
7.
Loualiche, S., H. L’Haridon, M. Salvi, et al.. (1989). Schottky diode and field-effect transistor on InP. Applied Physics Letters. 54(13). 1238–1240. 16 indexed citations
8.
Gauneau, M., Alain Le Corre, M. Salvi, et al.. (1989). Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment. Journal of Applied Physics. 66(6). 2241–2247. 7 indexed citations
9.
Loualiche, S., H. L’Haridon, Alain Le Corre, et al.. (1988). Schottky and field-effect transistor fabrication on InP and GaInAs. Applied Physics Letters. 52(7). 540–542. 37 indexed citations
10.
Rolland, Amber D., Alain Le Corre, P.N. Favennec, et al.. (1988). Erbium-doped GaAs light-emitting diode at 1.54 μm. Electronics Letters. 24(15). 956–958. 27 indexed citations
11.
Bresse, J. F., et al.. (1987). Investigation on Interelectrode Metallic "Paths" Affecting the Operation of IC MESFETs. 15–18. 4 indexed citations
12.
Toudic, Y., et al.. (1987). Growth of low-dislocation semi-insulating InP(Fe, Ga). Journal of Crystal Growth. 83(2). 167–173. 3 indexed citations
13.
Corre, Alain Le, J. Caulet, M. Gauneau, et al.. (1987). Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy. Applied Physics Letters. 51(20). 1597–1599. 14 indexed citations
14.
Lecrosnier, D., et al.. (1987). Development of gate-lag effect on GaAs power MESFETs during aging. Electronics Letters. 23(4). 139–141. 20 indexed citations
15.
Lecrosnier, D.. (1983). Gettering by ion implantation. Nuclear Instruments and Methods in Physics Research. 209-210. 325–332. 17 indexed citations
16.
Lecrosnier, D., et al.. (1981). Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations. Journal of Applied Physics. 52(8). 5090–5097. 67 indexed citations
17.
Lecrosnier, D., et al.. (1980). Influence of phosphorus-induced point defects on a gold-gettering mechanism in silicon. Journal of Applied Physics. 51(2). 1036–1038. 25 indexed citations
18.
Lecrosnier, D., et al.. (1979). Long-range enhancement of boron diffusivity induced by a high-surface-concentration phosphorus diffusion. Applied Physics Letters. 34(3). 224–226. 15 indexed citations
19.
Lecrosnier, D., et al.. (1977). Investigation of ion-implantation damage with x-ray double reflection. Applied Physics Letters. 30(3). 141–143. 10 indexed citations
20.
Lecrosnier, D. & G. Pelous. (1974). Ion-implanted FET for power applications. IEEE Transactions on Electron Devices. 21(1). 113–118. 23 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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