L. Clement

461 total citations
4 papers, 30 citations indexed

About

L. Clement is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, L. Clement has authored 4 papers receiving a total of 30 indexed citations (citations by other indexed papers that have themselves been cited), including 4 papers in Electrical and Electronic Engineering, 1 paper in Atomic and Molecular Physics, and Optics and 1 paper in Electronic, Optical and Magnetic Materials. Recurrent topics in L. Clement's work include Advancements in Semiconductor Devices and Circuit Design (2 papers), Semiconductor materials and devices (2 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). L. Clement is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (2 papers), Semiconductor materials and devices (2 papers) and Integrated Circuits and Semiconductor Failure Analysis (2 papers). L. Clement collaborates with scholars based in France and Italy. L. Clement's co-authors include R. Beneyton, F. Leverd, S. Monfray, T. Salvetat, N. Loubet, Dominique Fleury, T. Skotnicki, S. Denorme, P. Perreau and P. Gouraud and has published in prestigious journals such as Solid-State Electronics and IEEE Journal of the Electron Devices Society.

In The Last Decade

L. Clement

4 papers receiving 29 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
L. Clement France 3 30 9 5 5 2 4 30
K. Ranjan India 3 28 0.9× 10 1.1× 5 1.0× 5 1.0× 4 2.0× 6 35
Zheng Tao Belgium 4 39 1.3× 13 1.4× 4 0.8× 6 1.2× 11 43
D. Bender Türkiye 2 23 0.8× 7 0.8× 6 1.2× 6 1.2× 3 28
Erik Haralson Sweden 4 34 1.1× 7 0.8× 8 1.6× 8 1.6× 2 1.0× 8 36
M. Homann Germany 4 21 0.7× 9 1.0× 6 1.2× 6 1.2× 5 33
C. Kim South Korea 2 35 1.2× 5 0.6× 6 1.2× 6 1.2× 3 36
F. Abbate France 4 30 1.0× 8 0.9× 11 2.2× 5 1.0× 10 34
Dave Huffman United States 2 23 0.8× 7 0.8× 5 1.0× 4 0.8× 6 28
Raja Muthinti United States 5 51 1.7× 20 2.2× 5 1.0× 5 1.0× 8 57
A. Margain France 4 73 2.4× 9 1.0× 8 1.6× 4 0.8× 3 1.5× 6 78

Countries citing papers authored by L. Clement

Since Specialization
Citations

This map shows the geographic impact of L. Clement's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by L. Clement with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites L. Clement more than expected).

Fields of papers citing papers by L. Clement

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by L. Clement. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by L. Clement. The network helps show where L. Clement may publish in the future.

Co-authorship network of co-authors of L. Clement

This figure shows the co-authorship network connecting the top 25 collaborators of L. Clement. A scholar is included among the top collaborators of L. Clement based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with L. Clement. L. Clement is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

4 of 4 papers shown
1.
Ristoiu, D., L. Clement, P. Zuliani, et al.. (2019). Crystallization Speed in Ge-Rich PCM Cells as a Function of Process and Programming Conditions. IEEE Journal of the Electron Devices Society. 7. 517–521. 5 indexed citations
2.
Chevalier, P., G. Avenier, Alex Montagne, et al.. (2018). 450 GHz <tex>$f_{\text{T}}$</tex> SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. 44. 72–75. 5 indexed citations
3.
Denorme, S., Dominique Fleury, N. Loubet, et al.. (2010). Gate-all-around technology: Taking advantage of ballistic transport?. Solid-State Electronics. 54(9). 883–889. 18 indexed citations
4.
Denorme, S., Dominique Fleury, N. Loubet, et al.. (2009). Gate-All-Around technology: taking advantage of ballistic transport ?. 7. 315–318. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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2026