Yingxin Guan

520 total citations
28 papers, 421 citations indexed

About

Yingxin Guan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, Yingxin Guan has authored 28 papers receiving a total of 421 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 20 papers in Atomic and Molecular Physics, and Optics and 11 papers in Materials Chemistry. Recurrent topics in Yingxin Guan's work include Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (9 papers) and Nanowire Synthesis and Applications (5 papers). Yingxin Guan is often cited by papers focused on Semiconductor Quantum Structures and Devices (17 papers), Semiconductor materials and devices (9 papers) and Nanowire Synthesis and Applications (5 papers). Yingxin Guan collaborates with scholars based in United States, South Korea and Italy. Yingxin Guan's co-authors include T. F. Kuech, S.E. Babcock, L. J. Mawst, Kamran Forghani, Dane Morgan, David H. K. Jackson, Honghyuk Kim, Jechan Lee, Hyung Ju Kim and George W. Huber and has published in prestigious journals such as Nature Materials, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

Yingxin Guan

28 papers receiving 414 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Yingxin Guan United States 12 244 206 171 53 35 28 421
G. Radnóczi Hungary 11 244 1.0× 202 1.0× 137 0.8× 80 1.5× 12 0.3× 37 435
James E. Moore United States 11 480 2.0× 287 1.4× 132 0.8× 64 1.2× 27 0.8× 41 557
Benjamin French United States 15 366 1.5× 260 1.3× 88 0.5× 60 1.1× 17 0.5× 25 527
Yoshiteru Takagi Japan 11 208 0.9× 387 1.9× 145 0.8× 50 0.9× 18 0.5× 24 457
Baofu Hu China 15 475 1.9× 596 2.9× 78 0.5× 47 0.9× 89 2.5× 32 684
Xing Yan United States 9 276 1.1× 153 0.7× 90 0.5× 84 1.6× 8 0.2× 12 436
Newton Ooi United States 6 129 0.5× 419 2.0× 99 0.6× 45 0.8× 20 0.6× 11 495
Moloud Kaviani United Kingdom 11 276 1.1× 471 2.3× 89 0.5× 46 0.9× 18 0.5× 16 609
M. Azizan France 12 235 1.0× 237 1.2× 151 0.9× 35 0.7× 17 0.5× 39 431
G. Yu. Rudko Ukraine 12 226 0.9× 234 1.1× 172 1.0× 91 1.7× 8 0.2× 53 456

Countries citing papers authored by Yingxin Guan

Since Specialization
Citations

This map shows the geographic impact of Yingxin Guan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Yingxin Guan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Yingxin Guan more than expected).

Fields of papers citing papers by Yingxin Guan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Yingxin Guan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Yingxin Guan. The network helps show where Yingxin Guan may publish in the future.

Co-authorship network of co-authors of Yingxin Guan

This figure shows the co-authorship network connecting the top 25 collaborators of Yingxin Guan. A scholar is included among the top collaborators of Yingxin Guan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Yingxin Guan. Yingxin Guan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Guan, Yingxin, et al.. (2020). High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. ACS Applied Materials & Interfaces. 12(18). 20859–20866. 8 indexed citations
2.
Chen, Yajin, Peng Zuo, Yingxin Guan, et al.. (2020). Reduction of Interface Reactions in the Low-Temperature Solid-Phase Epitaxy of ScAlMgO4 on Al2O3(0001). Crystal Growth & Design. 20(9). 6001–6007. 2 indexed citations
3.
Wang, Xing, Hongliang Zhang, Hao Jiang, et al.. (2020). Radiation-induced segregation in a ceramic. Nature Materials. 19(9). 992–998. 76 indexed citations
4.
Guan, Yingxin, Guangfu Luo, Dane Morgan, S.E. Babcock, & T. F. Kuech. (2019). Thermodynamic stability analysis of Bi-containing III-V quaternary alloys and the effect of epitaxial strain. Journal of Physics and Chemistry of Solids. 138. 109245–109245. 3 indexed citations
5.
Kim, Honghyuk, Yingxin Guan, T. F. Kuech, & L. J. Mawst. (2018). Impact of thermal annealing on internal device parameters of GaAs 0.965 Bi 0.035 /GaAs 0.75 P 0.25 quantum well lasers. IET Optoelectronics. 13(1). 12–16. 3 indexed citations
6.
Kim, Honghyuk, Yingxin Guan, S.E. Babcock, T. F. Kuech, & L. J. Mawst. (2018). Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing. Journal of Applied Physics. 123(11). 13 indexed citations
7.
Kim, Honghyuk, Kangho Kim, Yingxin Guan, et al.. (2018). Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy. Applied Physics Letters. 112(25). 5 indexed citations
8.
Chen, Weixin, Honghyuk Kim, Yingxin Guan, et al.. (2017). Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1−xBixexplored by atom probe tomography and HAADF-STEM. Nanotechnology. 28(21). 215704–215704. 13 indexed citations
9.
Kim, Honghyuk, Yingxin Guan, Kamran Forghani, T. F. Kuech, & L. J. Mawst. (2017). Laser diodes employing GaAs1−xBix/GaAs1−yPyquantum well active regions. Semiconductor Science and Technology. 32(7). 75007–75007. 7 indexed citations
10.
Chen, Yajin, Yingxin Guan, M. G. Lagally, et al.. (2017). Distinct Nucleation and Growth Kinetics of Amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A Step toward New Architectures. ACS Applied Materials & Interfaces. 9(46). 41034–41042. 18 indexed citations
11.
Laskar, Masihhur R., David H. K. Jackson, Yingxin Guan, et al.. (2016). Atomic Layer Deposition of Al2O3–Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-Ion Battery. ACS Applied Materials & Interfaces. 8(16). 10572–10580. 59 indexed citations
12.
Chen, Weixin, Paul Ronsheim, Kamran Forghani, et al.. (2016). Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−Bi /GaAs superlattice. Journal of Crystal Growth. 446. 27–32. 7 indexed citations
13.
Guan, Yingxin, et al.. (2016). Enhanced Incorporation of P into Tensile-Strained GaAs1-yPyLayers Grown by Metal-Organic Vapor Phase Epitaxy at Very Low Temperatures. ECS Journal of Solid State Science and Technology. 5(3). P183–P189. 3 indexed citations
14.
Sin, Yongkun, Mark W. Peterson, Zachary Lingley, et al.. (2016). Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9743. 974313–974313. 1 indexed citations
15.
Forghani, Kamran, et al.. (2015). The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal‐Organic Vapor Phase Epitaxy of GaAs1‐yBiy Films. Chemical Vapor Deposition. 21(7-8-9). 166–175. 12 indexed citations
16.
17.
Sin, Yongkun, Zachary Lingley, Mark W. Peterson, et al.. (2015). Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 9358. 93580I–93580I. 1 indexed citations
18.
Forghani, Kamran, Yingxin Guan, Guangfu Luo, et al.. (2015). Strain-compensated GaAs1−yPy/GaAs1−zBiz/GaAs1−yPyquantum wells for laser applications. Semiconductor Science and Technology. 30(9). 94011–94011. 6 indexed citations
19.
Forghani, Kamran, et al.. (2014). Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1−yBiy. Journal of Crystal Growth. 395. 38–45. 29 indexed citations
20.
Jackson, David H. K., et al.. (2014). Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles. AIChE Journal. 60(4). 1278–1286. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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