D. Kahng

2.0k total citations
44 papers, 1.4k citations indexed

About

D. Kahng is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, D. Kahng has authored 44 papers receiving a total of 1.4k indexed citations (citations by other indexed papers that have themselves been cited), including 36 papers in Electrical and Electronic Engineering, 23 papers in Materials Chemistry and 20 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in D. Kahng's work include Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (16 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). D. Kahng is often cited by papers focused on Semiconductor materials and devices (17 papers), Semiconductor materials and interfaces (16 papers) and Advancements in Semiconductor Devices and Circuit Design (9 papers). D. Kahng collaborates with scholars based in Japan, United States and South Korea. D. Kahng's co-authors include Simon M. Sze, C.R. Crowell, Candice Thomas, S. H. Wemple, B. B. Kosicki, E. W. Chase, D. C. Krupka, M.P. Lepselter, Mena Atalla and K.K. Thornber and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Proceedings of the IEEE.

In The Last Decade

D. Kahng

37 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
D. Kahng Japan 18 1.1k 585 531 181 108 44 1.4k
R. Torge Germany 6 600 0.5× 212 0.4× 372 0.7× 166 0.9× 41 0.4× 10 877
A. Uhlir United States 10 866 0.8× 792 1.4× 261 0.5× 692 3.8× 35 0.3× 23 1.3k
T. K. Hatwar United States 17 1.0k 0.9× 496 0.8× 198 0.4× 57 0.3× 128 1.2× 66 1.3k
Masao Kawachi Japan 16 662 0.6× 191 0.3× 290 0.5× 95 0.5× 55 0.5× 51 1.0k
M. Ferrara Italy 18 514 0.5× 479 0.8× 593 1.1× 255 1.4× 143 1.3× 83 1.2k
H. Nakagome Japan 21 978 0.9× 410 0.7× 712 1.3× 105 0.6× 125 1.2× 39 1.2k
Yutaka Mera Japan 19 553 0.5× 635 1.1× 586 1.1× 181 1.0× 63 0.6× 84 1.1k
G. Lippert Germany 26 1.4k 1.3× 1.1k 1.9× 619 1.2× 252 1.4× 61 0.6× 82 1.9k
M. Henny Switzerland 7 406 0.4× 540 0.9× 590 1.1× 245 1.4× 113 1.0× 7 1.1k
G. Eisenstein Israel 28 2.3k 2.1× 372 0.6× 1.4k 2.7× 178 1.0× 31 0.3× 131 2.5k

Countries citing papers authored by D. Kahng

Since Specialization
Citations

This map shows the geographic impact of D. Kahng's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Kahng with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Kahng more than expected).

Fields of papers citing papers by D. Kahng

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Kahng. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Kahng. The network helps show where D. Kahng may publish in the future.

Co-authorship network of co-authors of D. Kahng

This figure shows the co-authorship network connecting the top 25 collaborators of D. Kahng. A scholar is included among the top collaborators of D. Kahng based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Kahng. D. Kahng is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chang, Chun-Chieh, Avid Kamgar, & D. Kahng. (1985). High-temperature rapid thermal nitridation of silicon dioxide for future VLSI applications. IEEE Electron Device Letters. 6(9). 476–478. 29 indexed citations
2.
Johnson, L. F., et al.. (1982). Planarization of patterned surfaces by ion beam erosion. Applied Physics Letters. 40(7). 636–638. 16 indexed citations
3.
Thornber, K.K., et al.. (1978). Differential studies of dual-dielectric charge-storage cells. Journal of Applied Physics. 49(7). 4047–4063. 13 indexed citations
4.
Thornber, K.K. & D. Kahng. (1978). Electron-electron effects in the writing and erasing of dual-dielectric charge-storage cells. Applied Physics Letters. 32(3). 131–133. 7 indexed citations
5.
Kahng, D., et al.. (1977). Avalanche punch-through erase (APTE) mode in dual-dielectric charge-storage (DDC) cells. IEEE Transactions on Electron Devices. 24(5). 531–535. 4 indexed citations
6.
Kahng, D.. (1976). A historical perspective on the development of MOS transistors and related devices. IEEE Transactions on Electron Devices. 23(7). 655–657. 48 indexed citations
7.
Thornber, K.K., et al.. (1974). Bias-Temperature-Stress Studies of Charge Retention in Dual-Dielectric, Charge-Storage Cells. Bell System Technical Journal. 53(9). 1741–1770. 10 indexed citations
8.
Kahng, D., et al.. (1974). Interfacial Dopants for Dual-Dielectric, Charge-Storage Cells. Bell System Technical Journal. 53(9). 1723–1739. 27 indexed citations
9.
Thornber, K.K., et al.. (1974). IIIB-3 bias-temperature-stress studies of charge retention in dual-dielectric charge-storage cells. IEEE Transactions on Electron Devices. 21(11). 740–740. 5 indexed citations
10.
Kahng, D., et al.. (1970). Characteristics of pulse excited electroluminescence from ZnS films containing rare earth fluroide. Proceedings of the IEEE. 58(2). 184–189. 9 indexed citations
11.
Kahng, D. & Simon M. Sze. (1967). A Floating Gate and Its Application to Memory Devices. Bell System Technical Journal. 46(6). 1288–1295. 304 indexed citations
12.
Wemple, S. H., et al.. (1967). Surface Barrier Diodes on Semiconducting KTaO3. Journal of Applied Physics. 38(1). 353–359. 17 indexed citations
13.
Sze, Simon M., C.R. Crowell, & D. Kahng. (1964). Photoelectric Determination of the Image Force Dielectric Constant For Hot Electrons in Schottky Barriers. Journal of Applied Physics. 35(8). 2534–2536. 200 indexed citations
14.
Kahng, D.. (1964). Au-n-Type GaAs Schottky Barrier and Its Varactor Application. Bell System Technical Journal. 43(1). 215–224. 39 indexed citations
15.
Kahng, D.. (1963). Au-N-type GaAs Schottky barrier and its varactor application. IEEE Transactions on Electron Devices. 10(5). 337–337. 2 indexed citations
16.
Kahng, D., et al.. (1963). Epitaxial Silicon Junctions. Journal of The Electrochemical Society. 110(5). 394–394. 5 indexed citations
17.
Atalla, Mena & D. Kahng. (1962). A new "Hot electron" triode structure with semiconductor-metal emitter. IRE Transactions on Electron Devices. 9(6). 507–508. 26 indexed citations
18.
Kahng, D., et al.. (1962). Anomalous Impurity Diffusion in Epitaxial Silicon near the Substrate. Journal of The Electrochemical Society. 109(11). 1106–1106. 14 indexed citations
19.
Johnson, L. F. & D. Kahng. (1962). Piezoelectric Optical-Maser Modulator. Journal of Applied Physics. 33(12). 3440–3443. 1 indexed citations
20.
Smith, George & D. Kahng. (1962). Negative resistance of silicon p-n junctions at 4·2°K. Solid-State Electronics. 5(3). 177–178. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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