Will Mecouch

598 total citations
18 papers, 505 citations indexed

About

Will Mecouch is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Will Mecouch has authored 18 papers receiving a total of 505 indexed citations (citations by other indexed papers that have themselves been cited), including 18 papers in Condensed Matter Physics, 12 papers in Electrical and Electronic Engineering and 12 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Will Mecouch's work include GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (12 papers) and Semiconductor materials and devices (10 papers). Will Mecouch is often cited by papers focused on GaN-based semiconductor devices and materials (18 papers), Ga2O3 and related materials (12 papers) and Semiconductor materials and devices (10 papers). Will Mecouch collaborates with scholars based in United States and Poland. Will Mecouch's co-authors include R. F. Davis, R. J. Nemanich, C. C. Fulton, K. M. Tracy, G. Lucovsky, G. Lucovsky, Zlatko Sitar, Pramod Reddy, Ramón Collazo and E. Kohn and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Will Mecouch

18 papers receiving 489 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Will Mecouch United States 10 368 313 273 178 89 18 505
Brianna S. Eller United States 8 336 0.9× 331 1.1× 278 1.0× 165 0.9× 83 0.9× 12 486
T.K. Ko Taiwan 14 468 1.3× 262 0.8× 236 0.9× 263 1.5× 139 1.6× 34 561
An-Jye Tzou Taiwan 14 394 1.1× 335 1.1× 179 0.7× 246 1.4× 123 1.4× 32 571
P. Chen China 12 383 1.0× 276 0.9× 239 0.9× 232 1.3× 123 1.4× 33 530
Sung‐Ho Hahm South Korea 13 235 0.6× 296 0.9× 221 0.8× 198 1.1× 71 0.8× 66 461
K. M. Tracy United States 10 490 1.3× 363 1.2× 322 1.2× 217 1.2× 134 1.5× 11 632
Izak Baranowski United States 11 342 0.9× 343 1.1× 235 0.9× 112 0.6× 116 1.3× 16 487
Matthew Charles France 13 414 1.1× 396 1.3× 161 0.6× 137 0.8× 113 1.3× 87 547
D. Y. Song United States 11 310 0.8× 146 0.5× 161 0.6× 199 1.1× 95 1.1× 21 383
June O Song South Korea 11 456 1.2× 249 0.8× 198 0.7× 262 1.5× 133 1.5× 20 525

Countries citing papers authored by Will Mecouch

Since Specialization
Citations

This map shows the geographic impact of Will Mecouch's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Will Mecouch with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Will Mecouch more than expected).

Fields of papers citing papers by Will Mecouch

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Will Mecouch. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Will Mecouch. The network helps show where Will Mecouch may publish in the future.

Co-authorship network of co-authors of Will Mecouch

This figure shows the co-authorship network connecting the top 25 collaborators of Will Mecouch. A scholar is included among the top collaborators of Will Mecouch based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Will Mecouch. Will Mecouch is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Khachariya, Dolar, Will Mecouch, Seiji Mita, et al.. (2023). Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing. IEEE Transactions on Electron Devices. 71(3). 1494–1501. 13 indexed citations
2.
Reddy, Pramod, Will Mecouch, M. Hayden Breckenridge, et al.. (2022). Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. physica status solidi (RRL) - Rapid Research Letters. 16(6). 9 indexed citations
3.
Wang, Ke, Ronny Kirste, Seiji Mita, et al.. (2022). The role of Ga supersaturation on facet formation in the epitaxial lateral overgrowth of GaN. Applied Physics Letters. 120(3). 6 indexed citations
4.
Khachariya, Dolar, Will Mecouch, M. Hayden Breckenridge, et al.. (2022). Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing. Applied Physics Express. 15(10). 101004–101004. 24 indexed citations
5.
Reddy, Pramod, Dolar Khachariya, Will Mecouch, et al.. (2021). Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN. Applied Physics Letters. 119(18). 17 indexed citations
6.
Reddy, Pramod, M. Hayden Breckenridge, Qiang Guo, et al.. (2020). High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates. Applied Physics Letters. 116(8). 41 indexed citations
7.
Guo, Qiang, Ronny Kirste, Pramod Reddy, et al.. (2020). Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding. Japanese Journal of Applied Physics. 59(9). 91001–91001. 4 indexed citations
8.
Reddy, Pramod, Shun Washiyama, Will Mecouch, et al.. (2018). Plasma enhanced chemical vapor deposition of SiO2 and SiNx on AlGaN: Band offsets and interface studies as a function of Al composition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 36(6). 6 indexed citations
9.
Mecouch, Will, et al.. (2005). Growth of gallium nitride via iodine vapor phase growth. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2129–2132. 3 indexed citations
10.
Fulton, C. C., et al.. (2004). Electronic Properties of GaN (0001) – Dielectric Interfaces. International Journal of High Speed Electronics and Systems. 14(1). 107–125. 6 indexed citations
11.
Mecouch, Will, B. Wagner, R. F. Davis, et al.. (2004). Preparation and characterization of atomically clean, stoichiometric surfaces of AIN(0001). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 23(1). 72–77. 9 indexed citations
12.
Mecouch, Will, et al.. (2004). Initial Stages of Growth of Gallium Nitride via Iodine Vapor Phase Epitaxy. MRS Proceedings. 831. 1 indexed citations
13.
Mecouch, Will, et al.. (2004). In situ cleaning of GaN(0001) surfaces in a metalorganic vapor phase epitaxy environment. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(5). 2077–2082. 8 indexed citations
14.
Fulton, C. C., Will Mecouch, K. M. Tracy, et al.. (2003). Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001). Journal of Applied Physics. 93(7). 3995–4004. 89 indexed citations
15.
Tracy, K. M., Will Mecouch, R. F. Davis, & R. J. Nemanich. (2003). Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001). Journal of Applied Physics. 94(5). 3163–3172. 102 indexed citations
16.
Smith, T. P., et al.. (2003). Evolution and growth of ZnO thin films on GaN(0001) epilayers via metalorganic vapor phase epitaxy. Journal of Crystal Growth. 257(3-4). 255–262. 20 indexed citations
17.
Fulton, C. C., et al.. (2003). Band offset measurements of the Si3N4/GaN (0001) interface. Journal of Applied Physics. 94(6). 3949–3954. 81 indexed citations
18.
Fulton, C. C., et al.. (2003). Band offset measurements of the GaN (0001)/HfO2 interface. Journal of Applied Physics. 94(11). 7155–7158. 66 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Brianna S. Eller Breakdown of academic impact, for papers by T.K. Ko Breakdown of academic impact, for papers by An-Jye Tzou Breakdown of academic impact, for papers by P. Chen Breakdown of academic impact, for papers by Sung‐Ho Hahm Breakdown of academic impact, for papers by K. M. Tracy Breakdown of academic impact, for papers by Izak Baranowski Breakdown of academic impact, for papers by Matthew Charles Breakdown of academic impact, for papers by D. Y. Song Breakdown of academic impact, for papers by June O Song
Rankless by CCL
2026