J. Singh

633 citations

16 papers · 505 indexed · h-index 9

Impact in

Condensed Matter Physics top 10%
- Physics of Superconductivity and Magnetism
- GaN-based semiconductor devices and materials
Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Topological Materials and Phenomena

Papers in

Atomic and Molecular Physics, and Optics 13
- Semiconductor Quantum Structures and Devices 10
- Semiconductor materials and interfaces 4
Condensed Matter Physics 3
- GaN-based semiconductor devices and materials 2

Co-authors: John Hinckley M. Jaffé P. Bhattacharya R. Reifenberger D. Craig Miller Biswajit Das Won-Pyo Hong Supriyo Datta
Journals: Applied Physics Letters (4 papers)Physical review. B, Condensed matter (2 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (2 papers)Journal of Crystal Growth (1 paper)
Partner nations: United States India

In The Last Decade

J. Singh

15 papers receiving 490 citations

Peers

Countries citing papers authored by J. Singh

Since Specialization

Citations

This map shows the geographic impact of J. Singh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Singh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Singh more than expected).

Fields of papers citing papers by J. Singh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Singh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Singh. The network helps show where J. Singh may publish in the future.

Co-authorship network

The 19 scholars most cited alongside J. Singh, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with J. Singh Line = papers co-authored together J. Singh links everyone, so they are left out of the graph.

All Works

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16 of 16 papers shown

#	Work
1	A Study Of Charge Control In n- And p-type Lattice Matched And Strained Channel MODFETs With GaAs And InP Substrates M. Jaffé, A Wechselberg, J. Singh, Y.-J. Chan, D. Pavlidis, M. Quillec	2005	0
2	Tailorable Rectification: A study of Vertical Transport in AlGaN/GaN Heterostructures MRS Proceedings ·Madhusudan Singh, J. Singh, Umesh K. Mishra	2001	1
3	Hot hole relaxation in the SiGe system Journal of Applied Physics ·K. Nahrstedt, John Hinckley, J. Singh	1996	2
4	Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature Applied Physics Letters ·April S. Brown, P. Bhattacharya, J. Singh, G. Krocker, Sabyasachi Sen, F. Turco	1996	4
5	The effect of strain on hot-electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1 Journal of Applied Physics ·K. Nahrstedt, John Hinckley, J. Singh	1995	1
6	Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0<x<1) Applied Physics Letters ·Ip Kin Anthony Wong, Sarbaz Hasan, P. Bhattacharya, J. Singh, John Hinckley	1994	11
7	Carrier velocity-field characteristics and alloy scattering potential in Si1−xGex/Si Applied Physics Letters ·Sarbaz Hasan, John Hinckley, J. Singh, P. Bhattacharya	1993	28
8	Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality Journal of Crystal Growth ·Rosa Lojo, P. Bhattacharya, J. Singh	1991	8
9	Influence of substrate composition and crystallographic orientation on the band structure of pseudomorphic Si-Ge alloy films Physical review. B, Condensed matter ·John Hinckley, J. Singh	1990	106
10	Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs IEEE Transactions on Electron Devices ·Geok Ing Ng, D. Pavlidis, M. Jaffé, J. Singh, Hin-Fai Chau	1989	51
11	Evidence for spin splitting inInxGa1−xAs/In0.52Al0.48Asheterostructures asB→0 Physical review. B, Condensed matter ·Biswajit Das, D. Craig Miller, Supriyo Datta, R. Reifenberger, Won-Pyo Hong, P. Bhattacharya, J. Singh, M. Jaffé	1989	239
12	Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties Applied Physics Letters ·Geok Ing Ng, D. Pavlidis, M. Quillec, Y.-J. Chan, M. Jaffé, J. Singh	1988	21
13	Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs Y.-J. Chan, D. Pavlidis, Geok Ing Ng, M. Jaffé, J. Singh, M. Quillec	1987	4
14	A comparison of the electronic properties of thin-period (InAs)(GaAs) and (InAs)(AlAs) superlattices with compositionally similar random alloys IEEE Transactions on Electron Devices ·M. Jaffé, J. Singh	1987	8
15	Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors Solid State Communications ·M. Jaffé, J. Singh	1987	14
16	Monte Carlo simulation of the growth of A_1−xB_x layers on lattice‐matched substrates in molecular beam epitaxy Journal of Vacuum Science and Technology ·J. Singh, A. Madhukar	1982	7

About J. Singh

J. Singh is a scholar working on Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry and Atmospheric Science, having authored 16 papers that have together received 505 indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (10 papers), Semiconductor materials and interfaces (4 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Semiconductor materials and devices (4 papers), Advanced Semiconductor Detectors and Materials (2 papers), Silicon and Solar Cell Technologies (2 papers), GaN-based semiconductor devices and materials (2 papers) and ZnO doping and properties (2 papers). The work is most often cited by research in Condensed Matter Physics (167 citations), Atomic and Molecular Physics, and Optics (417 citations), Electrical and Electronic Engineering (286 citations), Materials Chemistry (89 citations) and Electronic, Optical and Magnetic Materials (22 citations). J. Singh has collaborated with scholars based in United States and India. Frequent co-authors include John Hinckley, M. Jaffé, P. Bhattacharya, R. Reifenberger, D. Craig Miller, Biswajit Das, Won-Pyo Hong, Supriyo Datta, Geok Ing Ng and D. Pavlidis. Their work appears in journals such as Applied Physics Letters, Physical review. B, Condensed matter, Journal of Applied Physics, IEEE Transactions on Electron Devices and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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