A. Madhukar

2.0k total citations
64 papers, 1.6k citations indexed

About

A. Madhukar is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, A. Madhukar has authored 64 papers receiving a total of 1.6k indexed citations (citations by other indexed papers that have themselves been cited), including 49 papers in Atomic and Molecular Physics, and Optics, 37 papers in Electrical and Electronic Engineering and 19 papers in Materials Chemistry. Recurrent topics in A. Madhukar's work include Semiconductor Quantum Structures and Devices (37 papers), Semiconductor materials and devices (18 papers) and Advanced Semiconductor Detectors and Materials (14 papers). A. Madhukar is often cited by papers focused on Semiconductor Quantum Structures and Devices (37 papers), Semiconductor materials and devices (18 papers) and Advanced Semiconductor Detectors and Materials (14 papers). A. Madhukar collaborates with scholars based in United States, China and Australia. A. Madhukar's co-authors include F. J. Grunthaner, S. V. Ghaisas, P. J. Grunthaner, B. Lewis, Qiwei Xie, A. Kalburge, M. F. Thomsen, Peng Chen, R. Heitz and J. Maserjian and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

A. Madhukar

64 papers receiving 1.5k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. Madhukar United States 20 1.3k 1.0k 534 169 160 64 1.6k
R. Butz Germany 17 803 0.6× 657 0.6× 447 0.8× 152 0.9× 175 1.1× 46 1.3k
Toshiro Isu Japan 23 1.6k 1.2× 1.3k 1.3× 442 0.8× 246 1.5× 105 0.7× 168 2.0k
E. Colas United States 26 1.5k 1.1× 1.1k 1.1× 292 0.5× 168 1.0× 80 0.5× 78 1.8k
M. Kuzmin Russia 17 854 0.7× 558 0.5× 396 0.7× 123 0.7× 118 0.7× 155 1.2k
J. Heydenreich Germany 19 2.6k 1.9× 2.2k 2.2× 1.3k 2.4× 327 1.9× 93 0.6× 83 3.1k
J. P. Faurie United States 25 1.4k 1.1× 1.5k 1.5× 657 1.2× 123 0.7× 88 0.6× 87 1.9k
A. J. SpringThorpe Canada 24 1.4k 1.1× 1.7k 1.6× 380 0.7× 249 1.5× 103 0.6× 134 2.0k
G. Landgren Sweden 25 1.2k 0.9× 1.6k 1.6× 537 1.0× 213 1.3× 413 2.6× 112 2.1k
H. P. Meier Switzerland 26 1.7k 1.3× 1.4k 1.4× 381 0.7× 312 1.8× 68 0.4× 90 2.1k
M. Wassermeier Germany 21 1.5k 1.2× 732 0.7× 445 0.8× 270 1.6× 92 0.6× 55 1.8k

Countries citing papers authored by A. Madhukar

Since Specialization
Citations

This map shows the geographic impact of A. Madhukar's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. Madhukar with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. Madhukar more than expected).

Fields of papers citing papers by A. Madhukar

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. Madhukar. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. Madhukar. The network helps show where A. Madhukar may publish in the future.

Co-authorship network of co-authors of A. Madhukar

This figure shows the co-authorship network connecting the top 25 collaborators of A. Madhukar. A scholar is included among the top collaborators of A. Madhukar based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. Madhukar. A. Madhukar is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ramachandran, T., A. Madhukar, I. Mukhametzhanov, et al.. (1998). Nature of Stranski–Krastanow growth of InAs on GaAs(001). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 16(3). 1330–1333. 24 indexed citations
2.
Xie, Qiwei, et al.. (1994). Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 12(4). 2568–2573. 61 indexed citations
3.
Rich, Daniel H., K. C. Rajkumar, Li Chen, et al.. (1992). Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near-infrared cathodoluminescence study. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(4). 1965–1970. 3 indexed citations
4.
Goiran, M., et al.. (1990). Effect of inhomogeneous charge distribution on the cyclotron resonance in an inverted GaAs/Ga1−xAlxAs interface. Physical review. B, Condensed matter. 42(18). 11833–11838. 1 indexed citations
5.
Echternach, P. M., et al.. (1990). Transport measurements on a high mobility, ultralow carrier concentration inverted GaAs/AlGaAs heterostructure. Physica B Condensed Matter. 165-166. 871–872. 2 indexed citations
6.
Ogale, S. B. & A. Madhukar. (1989). Low-energy ion beam effects on the molecular beam epitaxical growth of III-V compound semiconductors: A Monte Carlo simulation study. Applied Physics Letters. 55(11). 1115–1117. 2 indexed citations
7.
Huang, Chunhui, et al.. (1988). Thermal annealing effect on the Al0.3Ga0.7As surface studied by a combined XPS, HREELS and LEED measurement. Solid State Communications. 68(4). 411–415. 1 indexed citations
8.
Thomsen, M. F. & A. Madhukar. (1987). Classical description of laser-induced desorption rates. Physical review. B, Condensed matter. 35(15). 8131–8143. 4 indexed citations
9.
Chen, Peng, et al.. (1987). RHEED As A Tool For Examining Kinetic Processes At MBE Grown Surfaces. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 796. 139–139. 2 indexed citations
10.
Ogale, S. B., A. Madhukar, & M. F. Thomsen. (1987). Molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam: A Monte Carlo simulation study. Applied Physics Letters. 51(11). 837–839. 9 indexed citations
11.
12.
Ghaisas, S. V. & A. Madhukar. (1986). Role of Surface Molecular Reactions in Influencing the Growth Mechanism and the Nature of Nonequilibrium Surfaces: A Monte Carlo Study of Molecular-Beam Epitaxy. Physical Review Letters. 56(10). 1066–1069. 83 indexed citations
13.
Lewis, B., et al.. (1984). RHEED oscillation studies of MBE growth kinetics and lattice mismatch strain-induced effects during InGaAs growth on GaAs(100). Journal of Vacuum Science and Technology. 2. 419–424. 6 indexed citations
14.
Grunthaner, P. J., F. J. Grunthaner, & A. Madhukar. (1983). An XPS study of silicon/noble metal interfaces: Bonding trends and correlations with the Schottky barrier heights. Physica B+C. 117-118. 831–833. 5 indexed citations
15.
Singh, J. & A. Madhukar. (1982). Monte Carlo simulation of the growth of A1−xBx layers on lattice‐matched substrates in molecular beam epitaxy. Journal of Vacuum Science and Technology. 20(3). 716–719. 7 indexed citations
16.
Grunthaner, P. J., F. J. Grunthaner, & A. Madhukar. (1982). Chemical bonding and charge redistribution: Valence band and core level correlations for the Ni/Si, Pd/Si, and Pt/Si systems. Journal of Vacuum Science and Technology. 20(3). 680–683. 115 indexed citations
17.
Grunthaner, P. J., F. J. Grunthaner, & A. Madhukar. (1982). Summary Abstract: Transition metal silicides: Trends in the bonding in the bulk and at the interface. Journal of Vacuum Science and Technology. 21(2). 637–638. 15 indexed citations
18.
Madhukar, A.. (1982). Modulated semiconductor structures: An overview of some basic considerations for growth and desired electronic structure. Journal of Vacuum Science and Technology. 20(2). 149–161. 9 indexed citations
19.
Madhukar, A., et al.. (1979). Electronic structure of semi-infinite III–V compound semiconductor surfaces and interfaces: Application to InAs/GaSb(110). Journal of Vacuum Science and Technology. 16(5). 1364–1369. 4 indexed citations
20.
Madhukar, A., et al.. (1977). Exact Solution for the Diffusion of a Particle in a Medium with Site Diagonal and Off-Diagonal Dynamic Disorder. Physical Review Letters. 39(22). 1424–1427. 103 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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