Y.-J. Chan

536 total citations
48 papers, 438 citations indexed

About

Y.-J. Chan is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, Y.-J. Chan has authored 48 papers receiving a total of 438 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 9 papers in Condensed Matter Physics. Recurrent topics in Y.-J. Chan's work include Radio Frequency Integrated Circuit Design (23 papers), Semiconductor Quantum Structures and Devices (19 papers) and Semiconductor materials and devices (16 papers). Y.-J. Chan is often cited by papers focused on Radio Frequency Integrated Circuit Design (23 papers), Semiconductor Quantum Structures and Devices (19 papers) and Semiconductor materials and devices (16 papers). Y.-J. Chan collaborates with scholars based in Taiwan, United States and France. Y.-J. Chan's co-authors include D. Pavlidis, Manijeh Razeghi, F. Omnès, Y.-S. Wu, Wei‐Yu Chiu, Rong Xuan, Geok Ing Ng, P. Maurel, Chun-Hsiung Lin and J.‐I. Chyi and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Journal of Lightwave Technology.

In The Last Decade

Y.-J. Chan

43 papers receiving 413 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Y.-J. Chan Taiwan 12 401 231 81 56 42 48 438
K. Kosemura Japan 9 365 0.9× 208 0.9× 77 1.0× 75 1.3× 44 1.0× 19 402
H. Thomas United Kingdom 12 358 0.9× 275 1.2× 96 1.2× 65 1.2× 32 0.8× 46 411
Ziqiang Zhao Japan 12 324 0.8× 223 1.0× 47 0.6× 59 1.1× 59 1.4× 34 392
S. Takamiya Japan 14 544 1.4× 372 1.6× 74 0.9× 75 1.3× 36 0.9× 87 585
L.P. Sadwick United States 10 234 0.6× 186 0.8× 36 0.4× 65 1.2× 40 1.0× 54 291
Chantal Fontaine France 12 238 0.6× 246 1.1× 62 0.8× 95 1.7× 80 1.9× 32 356
T. Sonoda Japan 10 296 0.7× 208 0.9× 45 0.6× 40 0.7× 28 0.7× 43 318
N. El-Zein United States 9 617 1.5× 450 1.9× 34 0.4× 86 1.5× 29 0.7× 32 659
T. Katsuyama Japan 13 433 1.1× 352 1.5× 42 0.5× 84 1.5× 48 1.1× 44 492
T. Niwa Japan 10 277 0.7× 163 0.7× 100 1.2× 48 0.9× 44 1.0× 20 318

Countries citing papers authored by Y.-J. Chan

Since Specialization
Citations

This map shows the geographic impact of Y.-J. Chan's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y.-J. Chan with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y.-J. Chan more than expected).

Fields of papers citing papers by Y.-J. Chan

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y.-J. Chan. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y.-J. Chan. The network helps show where Y.-J. Chan may publish in the future.

Co-authorship network of co-authors of Y.-J. Chan

This figure shows the co-authorship network connecting the top 25 collaborators of Y.-J. Chan. A scholar is included among the top collaborators of Y.-J. Chan based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Y.-J. Chan. Y.-J. Chan is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Lin, Cheng‐Kai, et al.. (2006). V-Band GaAs pHEMT Cross-Coupled Sub-Harmonic Oscillator. IEEE Microwave and Wireless Components Letters. 16(8). 473–475. 8 indexed citations
2.
Wu, C. C., et al.. (2005). A comprehensive varactor study for advanced CMOS RFIC design. 66–67. 5 indexed citations
3.
4.
Liang, Kung‐Hao, et al.. (2005). The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature. IEEE MTT-S International Microwave Symposium Digest, 2005.. 2239–2242. 2 indexed citations
5.
Wu, Y.-S., et al.. (2005). High-performance evanescently edge coupled photodiodes with partially p-doped photoabsorption layer at 1.55-/spl mu/m wavelength. IEEE Photonics Technology Letters. 17(4). 878–880. 58 indexed citations
6.
Lin, Ching Hsuan, et al.. (2004). Low-<tex>$kappa$</tex>BCB Passivation on AlGaN–GaN HEMT Fabrication. IEEE Electron Device Letters. 25(12). 763–765. 15 indexed citations
7.
Chan, Y.-J., S. Williamson, John Nees, et al.. (2003). Novel high-impedance photoconductive sampling probe for ultra-high speed circuit characterization. 28. 19–22.
8.
Chiu, Hsien‐Chin, Shih-Cheng Yang, Y.-J. Chan, & J. M. Kuo. (2002). High power density and power added efficiency of Al/sub 0.5/In/sub 0.5/P/InGaAs doped-channel HFETs. 188–191. 1 indexed citations
9.
Chan, Y.-J., et al.. (2002). A new empirical large-signal model for enhancement-mode AlGaAs/InGaAs pHEMTs. Solid-State Electronics. 46(12). 2135–2139. 1 indexed citations
10.
11.
Chan, Y.-J., et al.. (1998). Correlation between high-voltage kink and substratecurrent in GaAs MESFETs. Electronics Letters. 34(19). 1884–1885.
12.
Chan, Y.-J., et al.. (1998). 2.4 GHz monolithic microwave mixer with lumped balanced circuits. Microwave and Optical Technology Letters. 17(6). 357–359. 2 indexed citations
13.
Ke, Lu, Y.-J. Chan, & Yi‐Chien Chiang. (1996). Monolithic microwave AlGaAs/InGaAs doped-channel FET switches. Microwave and Optical Technology Letters. 13(1). 47–49. 5 indexed citations
14.
Chan, Y.-J., et al.. (1995). In 0.52 (Al 0.9 Ga 0.1 ) 0.48 As/In 0.53 Ga 0.47 AsHEMT withimproved device reliability. Electronics Letters. 31(13). 1105–1106. 7 indexed citations
15.
Chan, Y.-J., et al.. (1992). Improved performance of highly strained InGaAs/GaAs heterostructure devices grown on patterned GaAs substrates. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 10(2). 1035–1037. 2 indexed citations
16.
Chan, Y.-J. & D. Pavlidis. (1992). Single and dual p-doped channel In/sub 0.52/Al/sub 0.48/ As/In/sub x/Ga/sub 1-x/As (x=0.53, 0.65) FET's and the role of doping. IEEE Transactions on Electron Devices. 39(3). 466–472. 14 indexed citations
17.
Chan, Y.-J. & D. Pavlidis. (1991). In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (0.53>or=x>or=0.70) lattice-matched and strained heterostructure insulated-gate FETs. IEEE Transactions on Electron Devices. 38(9). 1999–2005. 10 indexed citations
18.
Chan, Y.-J., D. Pavlidis, Manijeh Razeghi, & F. Omnès. (1990). Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures. IEEE Transactions on Electron Devices. 37(10). 2141–2147. 78 indexed citations
19.
Ng, Geok Ing, D. Pavlidis, M. Quillec, et al.. (1988). Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties. Applied Physics Letters. 52(9). 728–730. 21 indexed citations
20.
Chan, Y.-J., D. Pavlidis, Geok Ing Ng, et al.. (1987). Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs. 427–430. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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