Koichi Kamon

470 total citations
15 papers, 380 citations indexed

About

Koichi Kamon is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, Koichi Kamon has authored 15 papers receiving a total of 380 indexed citations (citations by other indexed papers that have themselves been cited), including 14 papers in Atomic and Molecular Physics, and Optics, 13 papers in Electrical and Electronic Engineering and 6 papers in Condensed Matter Physics. Recurrent topics in Koichi Kamon's work include Semiconductor Quantum Structures and Devices (12 papers), Semiconductor Lasers and Optical Devices (6 papers) and Semiconductor materials and devices (6 papers). Koichi Kamon is often cited by papers focused on Semiconductor Quantum Structures and Devices (12 papers), Semiconductor Lasers and Optical Devices (6 papers) and Semiconductor materials and devices (6 papers). Koichi Kamon collaborates with scholars based in Japan. Koichi Kamon's co-authors include Shigenori Takagishi, Hideki Mori, M. Mihara, Masao Mashita, Katsutoshi KIMURA, Masashi Ishii, Minoru Mihara, Masanori Ishii, Makoto Ishii and H. Kumabe and has published in prestigious journals such as Japanese Journal of Applied Physics, Journal of Crystal Growth and Electronics Letters.

In The Last Decade

Koichi Kamon

15 papers receiving 311 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Koichi Kamon Japan 11 306 285 116 91 37 15 380
P. Roentgen Switzerland 12 431 1.4× 467 1.6× 95 0.8× 100 1.1× 65 1.8× 37 570
C. Anayama Japan 11 303 1.0× 295 1.0× 73 0.6× 71 0.8× 40 1.1× 25 378
J. P. Salerno United States 13 394 1.3× 420 1.5× 85 0.7× 92 1.0× 56 1.5× 31 528
E. M. Clausen United States 13 276 0.9× 275 1.0× 69 0.6× 95 1.0× 55 1.5× 27 389
M. Ozeki Japan 12 396 1.3× 364 1.3× 105 0.9× 130 1.4× 54 1.5× 36 487
M. G. Mier United States 8 247 0.8× 244 0.9× 73 0.6× 71 0.8× 29 0.8× 22 342
M. Baudet France 12 337 1.1× 463 1.6× 57 0.5× 151 1.7× 37 1.0× 25 526
Takeshi Akatsuka Japan 6 359 1.2× 361 1.3× 141 1.2× 79 0.9× 39 1.1× 7 436
J. K. Shurtleff United States 12 266 0.9× 307 1.1× 88 0.8× 97 1.1× 44 1.2× 16 368
M. Mannoh Japan 15 414 1.4× 381 1.3× 148 1.3× 114 1.3× 48 1.3× 42 532

Countries citing papers authored by Koichi Kamon

Since Specialization
Citations

This map shows the geographic impact of Koichi Kamon's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Koichi Kamon with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Koichi Kamon more than expected).

Fields of papers citing papers by Koichi Kamon

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Koichi Kamon. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Koichi Kamon. The network helps show where Koichi Kamon may publish in the future.

Co-authorship network of co-authors of Koichi Kamon

This figure shows the co-authorship network connecting the top 25 collaborators of Koichi Kamon. A scholar is included among the top collaborators of Koichi Kamon based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Koichi Kamon. Koichi Kamon is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

15 of 15 papers shown
1.
Kamon, Koichi, et al.. (1987). Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs. Japanese Journal of Applied Physics. 26(3A). L200–L200. 7 indexed citations
2.
Kamon, Koichi, et al.. (1987). Orientation dependence of GaAs growth in low-pressure OMVPE. Journal of Crystal Growth. 84(1). 126–132. 42 indexed citations
3.
Kamon, Koichi, et al.. (1987). Silicon doping using disilane in low-pressure OMVPE of GaAs. Journal of Crystal Growth. 83(3). 327–333. 33 indexed citations
4.
KIMURA, Katsutoshi, et al.. (1987). Silicon doping from disilane in gas source MBE of GaAs. Journal of Crystal Growth. 81(1-4). 276–280. 20 indexed citations
5.
Ishii, Masanori, et al.. (1987). Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuits. Electronics Letters. 23(5). 179–181. 2 indexed citations
6.
Takagishi, Shigenori, et al.. (1987). Diagnostics of Gas Reaction Using Trimethylgallium-AsH3 and Triethylgallium-AsH3 in Low-Pressure Organometallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 26(12R). 2002–2002. 10 indexed citations
7.
Kamon, Koichi, et al.. (1987). Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4. Japanese Journal of Applied Physics. 26(3R). 419–419. 23 indexed citations
8.
Kamon, Koichi, et al.. (1986). Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE. Journal of Crystal Growth. 77(1-3). 297–302. 37 indexed citations
9.
Kamon, Koichi, et al.. (1986). Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine. Japanese Journal of Applied Physics. 25(12A). L979–L979. 43 indexed citations
10.
Yamada, Takumi, et al.. (1986). Pair-groove-substrate GaAs/AlGaAs multiquantum-well lasers with a self-aligned stripe geometry. Electronics Letters. 22(22). 1164–1166. 2 indexed citations
11.
Takagishi, Shigenori, et al.. (1986). Epitaxial growth of AlGa1−As by low-pressure MOCVD. Journal of Crystal Growth. 75(3). 545–550. 3 indexed citations
12.
Takagishi, Shigenori, et al.. (1986). Low-Pressure OMVPE of GaAs Using Triethylgallium. Japanese Journal of Applied Physics. 25(9R). 1393–1393. 11 indexed citations
13.
Mashita, Masao, et al.. (1986). The pyrolysis temperature of triethylgallium in the presence of arsine of trimethylaluminum. Journal of Crystal Growth. 77(1-3). 194–199. 39 indexed citations
14.
Kamon, Koichi, Shigenori Takagishi, & Hideki Mori. (1986). Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy. Japanese Journal of Applied Physics. 25(1A). L10–L10. 29 indexed citations
15.
Kamon, Koichi, Shigenori Takagishi, & Hideki Mori. (1985). Selective epitaxial growth of GaAs by low-pressure MOVPE. Journal of Crystal Growth. 73(1). 73–76. 79 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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