John Hinckley

1.1k total citations
33 papers, 907 citations indexed

About

John Hinckley is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, John Hinckley has authored 33 papers receiving a total of 907 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 18 papers in Atomic and Molecular Physics, and Optics and 7 papers in Condensed Matter Physics. Recurrent topics in John Hinckley's work include Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (13 papers) and Semiconductor Quantum Structures and Devices (10 papers). John Hinckley is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (15 papers), Semiconductor materials and devices (13 papers) and Semiconductor Quantum Structures and Devices (10 papers). John Hinckley collaborates with scholars based in United States, Taiwan and Italy. John Hinckley's co-authors include J. Singh, P. Bhattacharya, J. Singh, Joe N. Kornegay, Eric P. Hoffman, Michael D. Tharp, J.Rafael M. Gorospe, Meng Zhang, Animesh Banerjee and Jasprit Singh and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

John Hinckley

31 papers receiving 873 citations

Peers

John Hinckley
Kota Tachibana Japan
Alejandro F. Braña Spain
Shiro Uchida Japan
Walter Henderson United States
D. Wong United States
J.T. Chu Taiwan
Xinbo Zou China
W. B. Wang United States
Akihiro Kawano Japan
Masakatsu Suzuki Japan
Kota Tachibana Japan
John Hinckley
Citations per year, relative to John Hinckley John Hinckley (= 1×) peers Kota Tachibana

Countries citing papers authored by John Hinckley

Since Specialization
Citations

This map shows the geographic impact of John Hinckley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Hinckley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Hinckley more than expected).

Fields of papers citing papers by John Hinckley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Hinckley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Hinckley. The network helps show where John Hinckley may publish in the future.

Co-authorship network of co-authors of John Hinckley

This figure shows the co-authorship network connecting the top 25 collaborators of John Hinckley. A scholar is included among the top collaborators of John Hinckley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with John Hinckley. John Hinckley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Reinecke, James B., Amanda J. Saraf, John Hinckley, et al.. (2025). Metastasis-Initiating Osteosarcoma Subpopulations Establish Paracrine Interactions with Lung and Tumor Cells to Create a Metastatic Niche. Cancer Research. 85(22). 4341–4358. 1 indexed citations
2.
3.
Gross, Amy C., Hakan Çam, Doris A. Phelps, et al.. (2018). IL-6 and CXCL8 mediate osteosarcoma-lung interactions critical to metastasis. JCI Insight. 3(16). 62 indexed citations
4.
Hinckley, John, et al.. (2013). Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 10(5). 794–798. 9 indexed citations
5.
6.
Jiang, Hongtao, John Hinckley, & Jasprit Singh. (1997). Free carrier absorption as a probe of carrier dynamics: A Monte Carlo based study for silicon. Applied Physics Letters. 70(14). 1834–1836. 1 indexed citations
7.
Jiang, Hongtao, John Hinckley, & J. Singh. (1997). Carrier dynamics studies through free-carrier absorption: a Monte Carlo study for silicon. IEEE Journal of Quantum Electronics. 33(10). 1779–1783. 3 indexed citations
8.
Hinckley, John, et al.. (1996). Calculation of electron and hole impact ionization coefficients in SiGe alloys. Journal of Applied Physics. 80(12). 6773–6782. 27 indexed citations
9.
Hinckley, John & J. Singh. (1996). High-field thermal noise of holes in silicon: The effect of valence band anisotropy. Journal of Applied Physics. 80(12). 6766–6772. 3 indexed citations
10.
Hinckley, John, et al.. (1996). Hot hole relaxation in the SiGe system. Journal of Applied Physics. 79(5). 2790–2792. 2 indexed citations
11.
Hinckley, John, et al.. (1995). Anisotropic high-field transverse differential mobility of holes in silicon. Applied Physics Letters. 67(20). 2966–2968. 1 indexed citations
12.
Hinckley, John & J. Singh. (1995). Transverse-velocity-fluctuation autocorrelation function of holes in silicon: The effect of valence-band anisotropy. Physical review. B, Condensed matter. 51(15). 9648–9651. 1 indexed citations
13.
Hinckley, John, et al.. (1995). The effect of strain on hot-electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1. Journal of Applied Physics. 78(9). 5454–5459. 1 indexed citations
14.
Gorospe, J.Rafael M., Michael D. Tharp, John Hinckley, Joe N. Kornegay, & Eric P. Hoffman. (1994). A role for mast cells in the progression of Duchenne muscular dystrophy?. Journal of the Neurological Sciences. 122(1). 44–56. 88 indexed citations
15.
Hinckley, John, et al.. (1994). Theoretical study on threshold energy and impact ionization coefficient for electrons in Si1−xGex. Applied Physics Letters. 64(22). 2985–2987. 17 indexed citations
16.
Vurgaftman, I., John Hinckley, & J. Singh. (1994). A comparison of optoelectronic properties of lattice-matched and strained quantum-well and quantum-wire structures. IEEE Journal of Quantum Electronics. 30(1). 75–84. 31 indexed citations
17.
Hinckley, John & J. Singh. (1994). Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential. Journal of Applied Physics. 76(7). 4192–4200. 33 indexed citations
18.
Hinckley, John, et al.. (1993). Carrier velocity-field characteristics and alloy scattering potential in Si1−xGex/Si. Applied Physics Letters. 63(10). 1393–1395. 28 indexed citations
19.
Hinckley, John & J. Singh. (1991). Dependence of pseudomorphic semiconductor band gap on substrate orientation. Journal of Applied Physics. 69(4). 2694–2696. 5 indexed citations
20.
Chin, Albert, Nacer Debbar, John Hinckley, et al.. (1987). Summary Abstract: Material properties and clustering in molecular-beam epitaxial In0.52Al0.48As and In1−x−yGaxAlyAs. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 5(3). 800–801. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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